SI4418DY.pdf

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Document:
New Product
Si4418DY
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
r DS(on) (
)
I D (A)
TrenchFET
Power MOSFET
100% Rg Tested
APPLICATIONS
200
0.130 @ V GS = 10 V
3
0.142 @ V GS = 6.0 V
2.8
Primary Side Switch
SO-8
D
S
1
8
D
S
2
3
4
7
D
S
6
D
G
G
5
D
Top View
S
Ordering Information: Si4418DY—E3
Si4418DY-T1—E3 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V DS
200
V
Gate-Source Voltage
V GS
20
T A = 25
C
3
2.3
Continuous Drain Current (T J = 150
C) a
I D
T A = 85
C
2.1
1.6
A
Pulsed Drain Current
I DM
12
Avalanche Current
L = 0.1 mH
I AS
6
Single Avalanche Energy (Duty Cycle
1%)
E AS
1.8
mJ
Continuous Source Current (Diode Conduction) a
I S
2.1
1.25
A
T A = 25
C
2.5
1.5
Maximum Power Dissipation a
P D
W
T A = 85
C
1.3
0.8
Operating Junction and Storage Temperature Range
T J , T stg
−55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
36
50
Maximum Junction-to-Ambient a
J i tAbi a
R thJA
Steady State
71
85
C/W
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R thJF
15
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
www.vishay.com
1
200
V
C) a
Continuous Drain Current (T J = 150
I D
A
L = 0 1 mH
Maximum Power Dissipation a
P D
W
Mi
R
323073131.010.png 323073131.011.png
Si4418DY
Vishay Siliconix
New Product
SPECIFICATIONS (T J = 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250
A
2
4
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS =
20 V
100
nA
V DS = 200 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
A
V DS = 200 V, V GS = 0 V, T J = 85
C
20
On-State Drain Current a
I D(on)
V DS
5 V, V GS = 10 V
12
A
V GS = 10 V, I D = 3 A
0.110
0.130
Drain-Source On-State Resistance a
r DS(on)
0.142
V GS = 6.0 V, I D = 2.8 A
0.120
Forward Transconductance a
g fs
V DS = 15 V, I D = 3 A
13
S
Diode Forward Voltage a
V SD
I S = 2.1 A, V GS = 0 V
0.8
1.2
V
Dynamic b
Total Gate Charge
Q g
20
30
Gate-Source Charge
Q gs
V DS = 100 V, V GS = 10 V, I D = 3 A
4.5
nC
Gate-Drain Charge
Q gd
6.5
Gate Resistance
R g
f = 1 MHz
1
2
3.4
Turn-On Delay Time
t d(on)
15
25
Rise Time
t r
V DD = 100 V, R L = 100
15
25
Turn-Off Delay Time
t d(off)
I D
1 A, V GEN = 10 V, R G = 6
40
60
ns
Fall Time
t f
20
30
Source-Drain Reverse Recovery Time
t rr
I F = 2.1 A, di/dt = 100 A/
s
70
110
2%.
b. Guaranteed by design, not subject to production testing.
300
s, duty cycle
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
12
12
10
V GS = 10 thru 6 V
10
8
5 V
8
6
6
T C = 125
C
4
4
2
2
25
C
4 V
−55
C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS − Drain-to-Source Voltage (V)
V GS − Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
Zero Gate Voltage Drain Current
I DSS
A
Drain-Source On-State Resistance a
r DS(on)
V DD = 100 V, R L = 100
Notes
a. Pulse test; pulse width
323073131.012.png 323073131.013.png
New Product
Si4418DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.20
1600
1400
0.16
1200
V GS = 6.0 V
C iss
0.12
1000
V GS = 10 V
800
0.08
600
400
0.04
C rss
200
C oss
0.00
0
0
2
4
6
8
10
12
0 00000000
I D − Drain Current (A)
V DS − Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
2.5
V DS = 100 V
I D = 3 A
V GS = 10 V
I D = 3 A
8
2.0
6
1.5
4
1.0
2
0.5
0
0.0
0
4
8
12
16
20
−50 −25
0
25
50
75
100 125 150
Q g − Total Gate Charge (nC)
T J − Junction Temperature (
C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
0.20
0.16
T J = 150
C
I D = 3 A
10
0.12
0.08
T J = 25
C
0.04
1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V SD − Source-to-Drain Voltage (V)
V GS − Gate-to-Source Voltage (V)
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
www.vishay.com
3
323073131.001.png 323073131.002.png 323073131.003.png
Si4418DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
50
0.6
0.4
40
0.2
I D = 250
A
−0.0
−0.2
30
−0.4
−0.6
20
−0.8
−1.0
10
−1.2
−1.4
−1.6
0
−50 −25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T J − Temperature (
C)
Time (sec)
100
Safe Operating Area
I DM Limited
r DS(on) Limited
10
P(t) = 0.0001
1
P(t) = 0.001
I D(on)
Limited
P(t) = 0.01
0.1
P(t) = 0.1
C
Single Pulse
P(t) = 1
P(t) = 10
dc
0.01
BV DSS Limited
0.001
0.1
1
10
100
1000
V DS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P DM
0.05
t 1
t 2
t 1
t 2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 71
C/W
Single Pulse
3. T JM − T A = P DM Z thJA (t)
4. Surface Mounted
0.01
10 −4
10 −3
10 −2
10 −1
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
T A = 25
323073131.004.png 323073131.005.png 323073131.006.png 323073131.007.png
New Product
Si4418DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 −4
10 −3
10 −2
10 −1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
www.vishay.com
5
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