SI4936A.pdf

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Si4936ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
TrenchFET
Power MOSFET
V DS (V)
r DS(on) (
)
I D (A)
30
0.036 @ V GS = 10 V
5.9
0.053 @ V GS = 4.5 V
4.9
D 1 D 1
D 2
D 2
SO-8
S 1
1
8
D 1
G 1
2
3
7
D 1
G 1
S 2
6
D 2
G 2
G 2
4
5
D 2
Top View
S 1
S 2
Ordering Information: Si4936ADY
Si4936ADY-T1 (with Tape and Reel)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V DS
30
V
Gate-Source Voltage
V GS
20
T A = 25
C
5.9
4.4
Continuous Drain Current (T J = 150
C) a
I D
T A = 70
C
4.7
3.6
A
Pulsed Drain Current
I DM
30
Continuous Source Current (Diode Conduction) a
I S
1.7
0.9
T A = 25
C
2.0
1.1
Maximum Power Dissipation a
P D
W
T A = 70
C
1.3
0.7
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
50
62.5
Maximum Junction-to-Ambient a
J i tAbi a
R thJA
Steady State
90
110
C/W
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R thJF
32
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71132
S-31989—Rev. B, 13-Oct-03
www.vishay.com
1
30
V
C) a
Continuous Drain Current (T J = 150
I D
A
Maximum Power Dissipation a
P D
W
Mi
R
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Si4936ADY
Vishay Siliconix
SPECIFICATIONS (T J = 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250
A
1.0
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS =
20 V
100
nA
V DS = 30 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
A
V DS = 30 V, V GS = 0 V, T J = 55
C
5
On-State Drain Current a
I D(on)
V DS
5 V, V GS = 10 V
30
A
V GS = 10 V, I D = 5.9 A
0.032
0.036
Drain-Source On-State Resistance a
r DS(on)
0.053
V GS = 4.5 V, I D = 4.9 A
0.042
Forward Transconductance a
g fs
V DS = 15 V, I D = 5.9 A
15
S
Diode Forward Voltage a
V SD
I S = 1.7 A, V GS = 0 V
0.8
1.2
V
Dynamic b
Total Gate Charge
Q g
13
20
Gate-Source Charge
Q gs
V DS = 15 V, V GS = 10 V, I D = 5.9 A
2.3
nC
Gate-Drain Charge
Q gd
2.0
Turn-On Delay Time
t d(on)
6
12
Rise Time
t r
V DD = 15 V, R L = 15
14
25
Turn-Off Delay Time
t d(off)
I D
1 A, V GEN = 10 V, R G = 6
30
60
ns
Fall Time
t f
5
10
Source-Drain Reverse Recovery Time
t rr
I F = 1.7 A, di/dt = 100 A/
s
30
60
2%.
b. Guaranteed by design, not subject to production testing.
300
s, duty cycle
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
V GS = 10 thru 5 V
T C = - 55
C
24
4 V
24
25
C
18
18
125
C
12
12
6
3 V
6
2 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
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2
Document Number: 71132
S-31989—Rev. B, 13-Oct-03
Zero Gate Voltage Drain Current
I DSS
A
Drain-Source On-State Resistance a
r DS(on)
V DD = 15 V, R L = 15
Notes
a. Pulse test; pulse width
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Si4936ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.08
1000
0.06
800
C iss
V GS = 4.5 V
600
0.04
V GS = 10 V
400
0.02
200
C oss
C rss
0.00
0
0
6
12
18
24
30
0
6
12
18
24
30
I D - Drain Current (A)
V DS - Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
V DS = 15 V
I D = 5.9 A
V GS = 10 V
I D = 5.9 A
8
1.4
6
1.2
4
1.0
2
0.8
0
0.6
0
3
6
9
12
15
- 50 - 25
0
25
50
75
100 125 150
Q g - Total Gate Charge (nC)
T J - Junction Temperature (
C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
0.08
T J = 150
C
I D = 5.9 A
0.06
10
0.04
T J = 25
C
0.02
1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V SD - Source-to-Drain Voltage (V)
V GS - Gate-to-Source Voltage (V)
Document Number: 71132
S-31989—Rev. B, 13-Oct-03
www.vishay.com
3
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Si4936ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
0.2
40
I D = 250
A
- 0.0
30
- 0.2
20
- 0.4
- 0.6
10
- 0.8
0
- 50 - 25
0
25
50
75
100 125 150
10 -3
10 -2
10 -1
1
10
100
600
T J - Temperature (
C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P DM
0.05
t 1
t 2
t 1
t 2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 90
C/W
3. T JM - T A = P DM Z thJA (t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (sec)
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Document Number: 71132
S-31989—Rev. B, 13-Oct-03
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