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FEATURES
BV
DSS
= 600 V
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 25 A (Max.) @ V
DS
= 600V
n Lower R
DS(ON)
: 2.037 (Typ.)
R
DS(on)
= 2.2
W
I
D
= 2.3 A
m
W
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
V
DSS
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 )
Continuous Drain Current (T
C
=100 )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 Ã from case for 5-seconds
600
2.3
1.5
16
260
2.3
3.3
3.0
33
0.26
V
o
o
I
D
C
A
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
O
1
A
V
mJ
A
mJ
V/ns
W
_
O
2
O
1
O
1
O
3
o
C
P
D
o
C
T
J
, T
STG
- 55 to +150
o
C
T
L
300
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
Units
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient
--
--
3.79
62.5
o
C/W
q
q
Electrical Characteristics
(T
C
=25 unless otherwise specified)
o
C
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
BV
DSS
BV/ T
J
V
GS(th)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
600
--
2.0
--
--
--
--
--
0.68
--
--
--
--
--
--
--
4.0
100
-100
25
250
V
V
GS
=0V,I
D
=250 A
I
D
=250 A See Fig 7
V
DS
=5V,I
D
=250 A
V
GS
=30V
V
GS
=-30V
V
DS
=600V
V
DS
=480V,T
C
=125
m
D
D
V/
o
C
m
V
m
I
GSS
nA
I
DSS
Drain-to-Source Leakage Current
A
o
C
R
DS(on)
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(ÃMillerÄ) Charge
--
--
2.2
W
V
GS
=10V,I
D
=1.15A
V
DS
=50V,I
D
=1.15A
4
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.0
450
50
20
10
13
30
15
20
--
--
--
--
3.0
710
75
30
40
45
110
55
34
--
--
4
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
--
--
--
--
--
--
--
4
11.9
pF
ns
V
DD
=300V,I
D
=4A,
R
G
=12
See Fig 13
W
4
5
nC
V
DS
=480V,V
GS
=10V,
I
D
=4A
See Fig 6 & Fig 12
4
5
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
O
1
4
--
--
--
--
--
--
--
--
350
2.15
2.3
16
1.4
--
--
A
Integral reverse pn-diode
in the MOSFET
T
J
=25 ,I
S
=2.3A,V
GS
=0V
T
J
=25 ,I
F
=4A
di
F
/dt=100A/ s
V
ns
C
o
C
o
C
m
m
4
O
1
2
O
3
4
5
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=90mH, I
AS
=2.3A, V
DD
=50V, R
G
=27
, Starting T
J
=25
I
SD
4A, di/dt 100A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
W
o
C
_
_
m
_
o
C
_
m
m
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V
GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bott om : 4.5 V
m
m
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
m
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
!"#$
%
&
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
m
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
1*%,2*%
3/45'6
m
m
/
/
/
!
,
!
,
!
0-
Fig 11. Thermal Response
q
!"#$%&
'(%)*+
"
,
,
-
.
q
Fig 12. Gate Charge Test Circuit & Waveform
!"!#$%
W
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Plik z chomika:
maciejek62
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