SFP9530.PDF
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FEATURES
BV
DSS
= -100 V
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n 175
R
DS(on)
= 0.3 W
I
D
= -10.5 A
C Opereting Temperature
n Extended Safe Operating Area
n Lower Leakage Current : -10 mA (Max.) @ V
DS
= -100V
n Low R
DS(ON)
: 0.225 W (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
V
DSS
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
-100
-10.5
-7.5
-42
V
C)
Continuous Drain Current (T
C
=100
o
I
D
A
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
O
1
A
V
mJ
A
mJ
V/ns
W
W/
_
2
368
-10.5
6.6
-6.5
66
0.44
O
1
O
1
O
3
o
C)
P
D
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8Ä from case for 5-seconds
o
C
T
J
, T
STG
- 55 to +175
o
C
T
L
300
Thermal Resistance
Symbol
Characteristic
Typ.
Max. Units
R
qJC
R
qCS
R
qJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
--
0.5
--
2.27
--
62.5
o
C/W
o
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
BV
DSS
DBV/DT
J
V
GS(th)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
-100
--
-2.0
--
--
--
--
--
-0.1
--
--
--
--
--
--
--
-4.0
-100
100
-10
-100
V
V/
V
GS
=0V,I
D
=-250
m
A
I
D
=-250mA See Fig 7
V
DS
=-5V,I
D
=-250mA
V
GS
=-20V
V
GS
=20V
V
DS
=-100V
V
DS
=-80V,T
C
=150
I
GSS
nA
I
DSS
Drain-to-Source Leakage Current
mA
o
C
R
DS(on)
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(ÃMillerÄ) Charge
--
--
0.3
W
V
GS
=-10V,I
D
=-5.3A
4
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
--
--
--
--
--
--
--
--
--
--
--
5.5
800
--
1035
240
90
35
55
100
60
38
--
--
V
DS
=-40V,I
D
=-5.3A
4
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
160
60
13
22
45
25
30
5.4
12.2
pF
ns
V
DD
=-50V,I
D
=-10.5A,
R
G
=12
See Fig 13
W
4
5
nC
V
DS
=-80V,V
GS
=-10V,
I
D
=-10.5A
See Fig 6 & Fig 12
4
5
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
O
1
--
--
--
--
--
--
--
--
120
0.53
-10.5
-42
-4.0
--
--
A
Integral reverse pn-diode
in the MOSFET
T
J
=25
V
ns
mC
o
C,I
S
=-10.5A,V
GS
=0V
C,I
F
=-10.5A
di
F
/dt=100A/ms
o
4
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=mH, I
AS
=-10.5A, V
DD
=-25V, R
G
=27W
*
, Starting T
J
=25
o
C
I
SD
-10.5A, di/dt 400A/ms, V
DD
BV
DSS
, Starting T
J
=25
o
C
Pulse Test : Pulse Width = 250
m
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
<
<
<
<
o
C
V
T
J
=25
O
1
O
2
O
3
4
5
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V
GS
Top : - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bott om : - 4.5 V
m
m
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
m
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
!
"
#$%&
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
+
m
*
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
!"#$"#
%&'()
*
-
,
Fig 11. Thermal Response
.
q
/0
123#4
(5#6"7
1
8.
q
/0
!
Fig 12. Gate Charge Test Circuit & Waveform
!"!#$%
W
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Plik z chomika:
maciejek62
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