NE_SE5532_A_SA5532_3.pdf

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INTEGRATED CIRCUITS
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
Product data
Supersedes data of 1997 Sep 29
2001 Aug 03
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Philips Semiconductors
Product data
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
DESCRIPTION
The 5532 is a dual high-performance low noise operational amplifier.
Compared to most of the standard operational amplifiers, such as
the 1458, it shows better noise performance, improved output drive
capability and considerably higher small-signal and power
bandwidths.
This makes the device especially suitable for application in
high-quality and professional audio equipment, instrumentation and
control circuits, and telephone channel amplifiers. The op amp is
internally compensated for gains equal to one. If very low noise is of
prime importance, it is recommended that the 5532A version be
used because it has guaranteed noise voltage specifications.
PIN CONFIGURATIONS
N, D8 Packages
OUTPUT A
1
8
V+
OUTPUT B
INVERTING INPUT A
2
7
A
B
NON-INVERTING INPUT A
V-
3
6
INVERTING INPUT B
4
5
NON-INVERTING INPUT B
TOP VIEW
D Package 1
FEATURES
•
–IN A
+IN A
NC
1
2
3
4
5
6
7
8
16
15
NC
NC
Small-signal bandwidth: 10 MHz
14
NC
OUT A
•
Output drive capability: 600
W
, 10 V RMS
–V CC
NC
NC
13
•
Input noise voltage: 5 nV/ / Hz (typical)
12
+V CC
OUT B
•
DC voltage gain: 50000
11
•
AC voltage gain: 2200 at 10 kHz
+IN B
–IN B
10
NC
9
NC
•
Power bandwidth: 140 kHz
•
Slew rate: 9 V/ m s
TOP VIEW
NOTE:
1. SOL and non-standard pinout.
•
Large supply voltage range: ± 3 to ± 20 V
SL00332
•
Compensated for unity gain
Figure 1. Pin Configurations
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
8-Pin Small Outline Package (SO)
0 ° C to 70 ° C
NE5532AD8
SOT96-1
8-Pin Plastic Dual In-Line Package (DIP)
0
°
C to 70
C
NE5532AN
SOT97-1
16-Pin Plastic Small Outline Large (SOL) Package
0 ° C to 70 ° C
NE5532D
SOT162-1
8-Pin Small Outline Package (SO)
0 ° C to 70 ° C
NE5532D8
SOT96-1
8-Pin Plastic Dual In-Line Package (DIP)
0 ° C to 70 ° C
NE5532N
SOT97-1
8-Pin Plastic Dual In-Line Package (DIP)
–40 ° C to +85 ° C
SA5532N
SOT97-1
8-Pin Small Outline Package (SO)
–55
°
C to +125
°
C
SE5532AD8
SOT96-1
16-Pin Plastic Dual In-Line Package (DIP)
–55 ° C to +125 ° C
SE5532N
SOT38-4
2001 Aug 03
2
853-0949 26836
°
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Philips Semiconductors
Product data
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
EQUIVALENT SCHEMATIC (EACH AMPLIFIER)
+
_
SL00333
Figure 2. Equivalent Schematic (Each Amplifier)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
V S
Supply voltage
±
22
V
V IN
Input voltage
± V SUPPLY
V
V DIFF
Differential input voltage 1
±
0.5
V
T amb
Operating temperature range
NE5532/A
0 to 70
° C
SA5532
–40 to +85
° C
SE5532/A
–55 to +125
° C
T stg
Storage temperature
–65 to +150
C
T j
Junction temperature
150
° C
P D
Maximum power dissipation,
T amb = 25
C (still-air) 2
8 D8 package
°
780
mW
8 N package
1200
mW
16 D package
1200
mW
T sld
Lead soldering temperature (10 sec max)
230
° C
NOTES:
1. Diodes protect the inputs against over-voltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6V. Maximum current should be limited to ± 10 mA.
2. Thermal resistances of the above packages are as follows:
N package at 100 ° C/W
D package at 105 ° C/W
D8 package at 160 ° C/W
2001 Aug 03
3
°
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Philips Semiconductors
Product data
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
DC ELECTRICAL CHARACTERISTICS
T amb = 25 ° C; V S = ± 15 V, unless otherwise specified. 1, 2, 3
SE5532/A
NE5532/A, SA5532
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
SYMBOL
PARAMETER
UNIT
Min
Typ
Max
Min
Typ
Max
V OS
Offset voltage
0.5
2
0.5
4
mV
Over temperature
3
5
mV
D
V OS /
D
T
5
5
m
V/
°
C
I OS
Offset current
100
10
150
nA
Over temperature
200
200
nA
D I OS / D T
200
200
pA/ ° C
I B
Input current
200
400
200
800
nA
Over temperature
700
1000
nA
D
I B /
D
T
5
5
nA/
°
C
8
10.5
8
16
mA
I CC
Supply current
Over temperature
13
mA
V CM
Common-mode input range
±
12
±
13
±
12
±
13
V
CMRR
Common-mode rejection ratio
80
100
70
100
dB
PSRR
Power supply rejection ratio
10
50
10
100
m
V/V
R L .
2 k W ; V O = ± 10 V
50
100
25
100
V/mV
A VOL
Large-signal voltage gain
Over temperature
25
15
V/mV
A VOL
R L
.
600
W
; V O =
±
10 V
40
50
15
50
V/mV
Over temperature
20
10
V/mV
R L . 600 W
± 12
± 13
± 12
± 13
Over temperature
± 10
± 12
± 10
± 12
V OUT
Output swing
R L
.
600
W
; V S =
±
18 V
±
15
±
16
±
15
±
16
V
V OUT
Over temperature
± 12
± 14
± 12
± 14
V
R L . 2 k W
± 13
± 13.5
± 13
± 13.5
Over temperature
± 12
± 12.5
± 10
± 12.5
R IN
Input resistance
30
300
30
300
k
W
I SC
Output short circuit current
10
38
60
10
38
60
mA
NOTES:
1. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6 V. Maximum current should be limited to ± 10 mA.
2. For operation at elevated temperature, derate packages based on the package thermal resistance.
3. Output may be shorted to ground at V S = ± 15 V, T amb = 25 ° C. Temperature and/or supply voltages must be limited to ensure dissipation
rating is not exceeded.
AC ELECTRICAL CHARACTERISTICS
T amb = 25 ° C; V S = ± 15 V, unless otherwise specified.
NE/SE5532/A, SA5532
TEST CONDITIONS
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
SYMBOL
PARAMETER
UNIT
Min
Typ
Max
R OUT
Output resistance
A V = 30 dB Closed-loop
f = 10 kHz, R L = 600
W
0.3
W
Voltage-follower
Overshoot
V IN = 100 mV P-P
10
%
C L = 100 pF; R L = 600 W
A V
Gain
f = 10 kHz
2.2
V/mV
GBW
Gain bandwidth product
C L = 100 pF; R L = 600 W
10
MHz
SR
Slew rate
9
V/ m s
V OUT = ± 10 V
140
kHz
Power bandwidth
V OUT =
±
14 V; R L = 600
W
,
100
kHz
V CC = ± 18V
2001 Aug 03
4
TEST CONDITIONS
Large-signal voltage gain
Out ut swing
214627376.008.png 214627376.009.png 214627376.010.png 214627376.011.png 214627376.012.png
Philips Semiconductors
Product data
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
ELECTRICAL CHARACTERISTICS
T amb = 25 ° C; V S = ± 15 V, unless otherwise specified.
NE/SE5532
NE/SA/SE5532A
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
SYMBOL
PARAMETER
UNIT
Min
Typ
Max
Min
Typ
Max
V NOISE
Input noise voltage
f O = 30 Hz
8
8
12
nV/ / Hz
f O = 1 kHz
5
5
6
nV/ / Hz
I NOISE
Input noise current
f O = 30 Hz
2.7
2.7
pA/ / Hz
f O = 1 kHz
0.7
0.7
pA/ / Hz
Channel separation
f = 1 kHz; R S = 5 k W
110
110
dB
TYPICAL PERFORMANCE CHARACTERISTICS
Open-Loop Frequency
Response
Closed-Loop Frequency
Response
Large-Signal Frequency
Response
60
120
40
TYPICAL VALUES
TYPICAL VALUES
15 V
TYPICAL VALUES
V S =
±
RF = 10 k
W
; RE = 100
W
80
40
30
40
20
RF = 9 k W ; RE = 1 k W
(V)
Vo(p-p)
20
RF = 1 k W ; RE = 8
0
0
10
-40
10 10 2 10 3 10 4 10 5 10 6 10 7
-20
10 2 10 3 10 4 10 5 10 6 10 7
10 3 10 4 10 5 10 6 10 7 10 8
f (Hz)
f (Hz)
f (Hz)
Input Commom-Mode
Voltage Range
Output Short-Circuit Current
Input Bias Current
80
1,4
30
V S =
±
15 V
V S =
±
15 V
TYPICAL VALUES
60
1,2
20
I O
(mA)
40
TYP
I I
(mA)
0,8
V IN (V)
20
0,4
10
0
-55 -25 0 25 50 75 100 +125
0
0
-55 -25 0 25 50 75 100 +125
0
10
20
T amb ( o C)
T amb ( o C)
Vp; –V N (V)
Supply Current
Input Noise Voltage Density
6
10 –2
I O = 0
TYP
10
4
TYP
I P
I N
(mA)
(nV
Hz
)
1
2
10 –1
0
10 –2
10
10 2
10 3
10 4
f (Hz)
0
10
20
Vp; –V N (V)
SL00334
Figure 3. Typical Performance Characteristics
2001 Aug 03
5
TEST CONDITIONS
0
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