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General purpose controlled avalanche (double) diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product specification
Supersedes data of 1996 Sep 10
1999 May 21
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Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
FEATURES
PINNING
·
Small plastic SMD package
DESCRIPTION
PIN
·
Switching speed: max. 50 ns
BAS29
BAS31
BAS35
·
General application
1
anode
anode
cathode (k1)
·
Continuous reverse voltage:
max. 90 V
2
not connected
cathode
cathode (k2)
3
cathode
common connection common anode
·
Repetitive peak reverse voltage:
max. 110 V
·
Repetitive peak forward current:
max. 600 mA
·
Repetitive peak reverse current:
max. 600 mA.
APPLICATIONS
handbook, halfpage
2
1
·
General purpose switching in e.g.
surface mounted circuits.
2
1
3
DESCRIPTION
General purpose switching diodes
fabricated in planar technology, and
encapsulated in small rectangular
plastic SMD SOT23 packages.
The BAS29 consists of a single diode.
The BAS31 has two diodes in series.
The BAS35 has two diodes with a
common anode.
3
a. Simplified outline.
c. BAS31 diode.
2
n.c.
1
2
1
3
3
b. BAS29 diode.
d. BAS35 diode.
MAM233
MARKING
TYPE NUMBER
MARKING
CODE
BAS29
L20
BAS31
L21
Fig.1 Simplified outline (SOT23) and symbols.
BAS35
L22
1999 May 21
2
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Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V RRM
repetitive peak reverse voltage
-
110
V
V R
continuous reverse voltage
-
90
V
I F
continuous forward current
single diode loaded; see Fig.2;
note 1
-
250
mA
double diode loaded; see Fig.2;
note 1
-
150
mA
I FRM
repetitive peak forward current
-
600
mA
I FSM
non-repetitive peak forward current square wave; T j =25
°
C prior to
surge; see Fig.4
t=1
m
s
-
10
A
t = 100
m
s
-
4
A
t=1s
-
0.75
A
P tot
total power dissipation
T amb =25 ° C; note 1
-
250
mW
I RRM
repetitive peak reverse current
-
600
mA
E RRM
repetitive peak reverse energy
t p ³
50
m
s; f
£
20 Hz; T j =25
°
C
-
5
mJ
T stg
storage temperature
-
65
+150
C
T j
junction temperature
-
150
° C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 21
3
°
22885073.032.png
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
ELECTRICAL CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V F
forward voltage
see Fig.3
I F =10mA
-
750
mV
I F =50mA
-
840
mV
I F = 100 mA
-
900
mV
I F = 200 mA
-
1
V
I F = 400 mA
-
1.25
V
I R
reverse current
see Fig.5
V R =90V
-
100
nA
V R =90V; T j = 150
°
C
-
100
m
A
V (BR)R
reverse avalanche breakdown
voltage
I R = 1 mA
120
170
V
C d
diode capacitance
f = 1 MHz; V R = 0; see Fig.6
-
35
pF
t rr
reverse recovery time
when switched from I F = 30 mA to
I R = 30 mA; R L = 100
-
50
ns
;
measured at I R = 3 mA; see Fig.7
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point
360
K/W
R th j-a
thermal resistance from junction to ambient note 1
500
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 21
4
22885073.033.png 22885073.034.png 22885073.035.png
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
GRAPHICAL DATA
300
MBG440
MBH280
600
handbook, halfpage
handbook, halfpage
I F
(mA)
IF
(mA)
200
(1)
400
(1)
(2)
(3)
100
(2)
200
0
0
0
100
T amb ( o C)
200
0
1
2
V F (V)
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
C; typical values.
(2) T j =25 ° C; typical values.
(3) T j =25
°
°
C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3 Forward current as a function of
forward voltage.
10 2
MBH327
handbook, full pagewidth
I FSM
(A)
10
1
10 - 1
1
10
10 2
10 3
t p ( m s)
10 4
Based on square wave currents.
T j =25
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 21
5
(1) T j = 150
°
C prior to surge.
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