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DISCRETE SEMICONDUCTORS
DATA SHEET
BF908; BF908R
Dual-gate MOS-FETs
Product specication
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30
11068491.012.png
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF908; BF908R
FEATURES
·
High forward transfer admittance
handbook, halfpage
d
·
Short channel transistor with high forward transfer
admittance to input capacitance ratio
4
3
g 2
·
Low noise gain controlled amplifier up to 1 GHz.
g 1
APPLICATIONS
·
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
1
2
s,b
Top view
MAM039
DESCRIPTION
Depletion type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistors are protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
Fig.1 Simplified outline (SOT143) and
symbol; BF908.
handbook, halfpage
d
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
3
4
g 2
g 1
PINNING
2
1
PIN
SYMBOL
DESCRIPTION
Top view
MAM040
s,b
1
s, b
source
2
d
drain
Fig.2 Simplified outline (SOT143R) and
symbol; BF908R.
3
g 2
gate 2
4
g 1
gate 1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V DS
drain-source voltage
-
-
12
V
I D
drain current
-
-
40
mA
P tot
total power dissipation
-
-
200
mW
T j
operating junction temperature
-
-
150
°
C
ï
y fs ï
forward transfer admittance
36
43
50
mS
C ig1-s
input capacitance at gate 1
2.4
3.1
4
pF
C rs
reverse transfer capacitance
f = 1 MHz
20
30
45
pF
F
noise gure
f = 800 MHz
-
1.5
2.5
dB
1996 Jul 30
2
11068491.013.png 11068491.014.png 11068491.015.png 11068491.001.png 11068491.002.png
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF908; BF908R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V DS
drain-source voltage
-
12
V
I D
drain current
-
40
mA
± I G1
gate 1 current
-
10
mA
±
I G2
gate 2 current
-
10
mA
P tot
total power dissipation
see Fig.3; note 1
BF908
up to T amb =50
°
C
-
200
mW
BF908R
up to T amb =40 ° C
-
200
mW
T stg
storage temperature
-
65
+150
°
C
T j
operating junction temperature
-
150
°
C
Note
1. Device mounted on a printed-circuit board.
250
MRC275
handbook, halfpage
P tot
(mW)
200
BF908
150
BF908R
100
50
0
0
50
100
150
200
T amb ( C)
o
Fig.3 Power derating curves.
1996 Jul 30
3
11068491.003.png 11068491.004.png
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF908; BF908R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
BF908
500
K/W
BF908R
550
K/W
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
T j =25 ° C; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
±
V (BR)G1-SS gate 1-source breakdown voltage V G2-S =V DS = 0; I G1-S =10mA
8
-
20
V
± V (BR)G2-SS gate 2-source breakdown voltage V G1-S =V DS = 0; I G2-S =10mA
8
-
20
V
-
V (P)G1-S
gate 1-source cut-off voltage
V G2-S =4V; V DS =8V; I D =20
m
A
-
-
2
V
-
V (P)G2-S
gate 2-source cut-off voltage
V G1-S =4V; V DS =8V; I D =20
m
A
-
-
1.5
V
I DSS
drain-source current
V G2-S =4V; V DS =8V; V G1-S = 0 3
15
27
A
± I G1-SS
gate 1 cut-off current
V G2-S =V DS = 0; V G1-S =5V
-
-
50
nA
±
I G2-SS
gate 2 cut-off current
V G1-S =V DS = 0; V G2-S =5V
-
-
50
nA
DYNAMIC CHARACTERISTICS
Common source; T amb =25
C; V DS =8V; V G2-S =4V; I D = 15 mA; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ï y fs ï
forward transfer admittance
pulsed; T j =25 ° C; f = 1 MHz
36
43
50
mS
C ig1-s
input capacitance at gate 1
f = 1 MHz
2.4
3.1
4
pF
C ig2-s
input capacitance at gate 2
f = 1 MHz
1.2
1.8
2.5
pF
C os
output capacitance
f = 1 MHz
1.2
1.7
2.2
pF
C rs
reverse transfer capacitance f = 1 MHz
20
30
45
fF
F
noise gure
f = 200 MHz; G S = 2 mS; B S =B Sopt
-
0.6
1.2
dB
f = 800 MHz; G S =G Sopt ; B S =B Sopt
-
1.5
2.5
dB
1996 Jul 30
4
°
11068491.005.png 11068491.006.png
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF908; BF908R
40
MRC281
V G2-S = 4 V
MRC282
30
handbook, halfpage
handbook, halfpage
V G1-S = 0.3 V
I D
(mA)
3 V
I D
(mA)
30
2 V
0.2 V
20
1.5 V
0.1 V
20
1 V
0 V
0.5 V
10
-
0.1 V
10
- 0.2 V
0 V
- 0.3 V
0
0.6
-
0.4
-
0.2
0
0.2
0.4
V G1-S (V)
0.6
0
0
4
8
12
16
V DS (V)
V DS = 8 V; T j =25
C.
V G2-S = 4 V; T j =25
C.
Fig.4 Transfer characteristics; typical values.
Fig.5 Output characteristics; typical values.
50
MRC280
60
MRC276
4 V
Y fs
(mS)
3 V
Y fs
(mS)
2 V
40
1.5 V
40
30
1 V
20
20
0 .5 V
10
V G2-S = 0 V
0
0
5
10
15
20
25
0
40
0
40
80
120
160
o
I D
(mA)
T j
( C)
V DS = 8 V; T j =25
C.
V DS = 8 V; V G2-S = 4 V; I D =15mA.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
Fig.7 Forward transfer admittance as a function
of junction temperature; typical values.
1996 Jul 30
5
-
°
°
°
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