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Schottky barrier double diode
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
MBD128
BAT74S
Schottky barrier double diode
Product specification
Supersedes data of 1998 Feb 06
1998 Jul 10
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74S
FEATURES
PINNING
·
Low forward voltage
PIN
DESCRIPTION
·
Guard ring protected
1
anode (a
1
)
·
Small SMD package.
2,5
not connected
3
cathode (k
2
)
APPLICATIONS
4
anode (a
2
)
·
Ultra high-speed switching
6
cathode (k
1
)
·
Voltage clamping
·
Protection circuits
·
Blocking diodes.
654
handbook, 2 columns
14
DESCRIPTION
Planar Schottky barrier double diode
with an integrated guard ring for
stress protection.
Two separate dies are encapsulated
in a SOT363 small SMD plastic
package.
63
123
Top view
MSA370
Marking code:
74.
Fig.1 Simplified outline (SOT363) and symbol.
1998 Jul 10
2
MBK149
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward current
t
p
£
1s;
d£
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t
p
<
10 ms
600
mA
P
tot
total power dissipation
T
amb
£
25
°
C; see Fig.2
-
230
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
125
°
C
T
amb
operating ambient temperature
-
65
+125
°
C
Double diode operation
V
R
continuous reverse voltage
-
30
V
V
R
continuous reverse voltage
series connection
-
60
V
I
F
continuous forward current
-
110
(1)
mA
I
FRM
repetitive peak forward current
t
p
£
1s;
d£
0.5
-
200
mA
Note
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse and the other in forward operation at the same moment, total device current is max. 200 mA.
1998 Jul 10
3
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74S
ELECTRICAL CHARACTERISTICS
T
amb
=25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 0.1 mA
240
mV
I
F
=1mA
320
mV
I
F
=10mA
400
mV
I
F
=30mA
500
mV
I
F
= 100 mA
800
mV
I
R
reverse current
V
R
= 25 V; note 1; see Fig.4
2
m
A
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
W
;
measured at I
R
=1mA
5
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 1 V; see Fig.5
10
pF
Note
1. Pulsed test: t
p
= 300
m
s;
d
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
416
K/W
Note
1. Refer to SOT363 standard mounting conditions.
1998 Jul 10
4
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74S
GRAPHICAL DATA
MSA894
MSA892
300
handbook, halfpage
10
3
P
tot
(mW)
I
F
(1)
(2)
(3)
(mA)
2
10
200
10
100
(1)
(2)
(3)
1
0
10
1
0
75
T
amb
( C)
o
150
0
0.4
0.8
1.2
V
F
(V)
(1) T
amb
= 125
°
C.
C.
(3) T
amb
=25
°
C.
°
Fig.2 Power derating curve.
Fig.3 Forward current as a function of forward
voltage; typical values.
10
3
I
R
MSA893
15
MSA891
(1)
m
A)
C
d
(pF)
10
2
(2)
10
10
5
1
(3)
10
1
0
0
10
20
30
0
10
20
30
V (V)
R
V (V)
R
C.
(2) T
amb
=85
°
C.
(3) T
amb
=25
°
°
C.
f = 1 MHz; T
amb
=25
°
C.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
1998 Jul 10
5
(2) T
amb
=85
(
(1) T
amb
= 125
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