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SMALL SIGNAL SCHOTTKY DIODE
®
BAT46
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose, metalto silicon diode featuring
high breakdown voltage low turn-on voltage.
DO 35
(Glass)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
V RRM
Repetitive Peak Reverse Voltage
100
V
I F
Forward Continuous Current*
T a = 25
°
C
150
mA
I FRM
Repetitive Peak Forward Current*
t p
£
1s
350
mA
d
£
0.5
I FSM
Surge non Repetitive Forward Current*
t p
=
10ms
750
mA
P tot
Power Dissipation*
T I = 80°C
150
mW
T stg
T j
Storage and Junction Temperature Range
- 65 to + 150
- 65 to + 125
°
C
T L
Maximum Temperature for Soldering during 10s at 4mm from Case
230
°
C
THERMAL RESISTANCE
Symbol
Test Conditions
Value
Unit
R th(j-a)
Junction-ambient*
300
°
C/W
* On infinite heatsink with 4mm lead length.
August 1999 Ed: 1A
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BAT46
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V BR
T j = 25
°
C
I F = 10
m
A
100
V
V F *
T j = 25
°
C
I F = 0.1mA
0.25
V
T j = 25
°
C
I F = 10mA
0.45
T j = 25
°
C
I F = 250mA
1
I R *
T j = 25
°
C
V R = 1.5V
0.5
A
T j = 60°C
5
T j = 25°C
V R = 10V
0.8
T j = 60°C
7.5
T j = 25°C
V R = 50V
2
T j = 60°C
15
T j = 25°C
V R = 75V
5
T j = 60°C
20
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T j = 25
°
C
V R = 0V
f = 1Mhz
10
pF
T j = 25
°
C
V R = 1V
6
* Pulse test: t p
£
300
m
s
d
<
2% .
2/4
m
199613174.005.png 199613174.006.png
BAT46
Fig. 1-1: Forward voltage drop versus forward cur-
rent (low level, typical values)
Fig. 1-2: Forward voltage drop versus forward cur-
rent (high level, typical values)
IFM(mA)
IFM(A)
20
5E-1
18
16
14
Tj=125°C
Tj=125°C
12
Tj=25°C
1E-1
Tj=25°C
10
8
6
4
2
VFM(V)
VFM(V)
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
1E-2
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Fig. 2: Leakage current versus reverse voltage ap-
plied (typical values)
Fig. 3: Leakage current versus junction temperature
(typical values)
IR(µA)
IR(µA)
VR=75V
1E+3
Tj=125°C
1E+3
Tj=100°C
1E+2
1E+2
Tj=75°C
1E+1
1E+1
Tj=50°C
1E+0
Tj=25°C
1E+0
1E-1
VR(V)
Tj(°C)
1E-1
0 0000000000
0
25
50
75
100
125
Fig. 4: Junction capacitance versus reverse voltage
applied (typical values)
C(pF)
10
F=1MHz
Tj=25°C
5
2
VR(V)
1
1
10
100
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BAT46
PACKAGE MECHANICAL DATA
DO 35 Glass
C
A
C
/
B
DIMENSIONS
Millimeters
REF.
Inches
Min.
Max.
Min.
Max.
A
3.05
4.50
0.120
0.177
/ D
/ D
B
1.53
2.00
0.060
0.079
C
12.7
0.500
D
0.458
0.558
0.018
0.022
Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
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