1n58xx.pdf

1N5820, 1N5821, 1N5822

1N5820 and 1N5822 are Preferred Devices

Axial Lead Rectifiers

. . . employing the Schottky Barrier principle in a large area

metal–to–silicon power diode. State–of–the–art geometry features

chrome barrier metal, epitaxial construction with oxide passivation

and metal overlap contact. Ideally suited for use as rectifiers in

low–voltage, high–frequency inverters, free wheeling diodes, and

polarity protection diodes.

•

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Extremely Low V F

SCHOTTKY BARRIER

RECTIFIERS

3.0 AMPERES

20, 30, 40 VOLTS

•

Low Power Loss/High Efficiency

•

Low Stored Charge, Majority Carrier Conduction

Mechanical Characteristics:

•

Case: Epoxy, Molded

•

Weight: 1.1 gram (approximately)

•

Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•

Lead and Mounting Surface Temperature for Soldering Purposes:

220

C Max. for 10 Seconds, 1/16

from case

•

Shipped in plastic bags, 500 per bag

•

Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to

the part number

•

Polarity: Cathode indicated by Polarity Band

•

Marking: 1N5820, 1N5821, 1N5822

AXIAL LEAD

CASE 267–03

STYLE 1

MAXIMUM RATINGS

Please See the Table on the Following Page

MARKING DIAGRAM

1N582x

1N582x = Device Code

ORDERING INFORMATION

Device

Package

Shipping

1N5820

Axial Lead

500 Units/Bag

1N5820RL

Axial Lead

1500/Tape & Reel

1N5821

Axial Lead

500 Units/Bag

1N5821RL

Axial Lead

1500/Tape & Reel

1N5822

Axial Lead

500 Units/Bag

1N5822RL

Axial Lead

1500/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2000

October, 2000 – Rev. 3

Publication Order Number:

1N5820/D

= 0, 1 or 2

1N5820, 1N5821, 1N5822

MAXIMUM RATINGS

Rating

Symbol

1N5820

1N5821

1N5822

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V RRM

V RWM

V R

Non–Repetitive Peak Reverse Voltage

V RSM

RMS Reverse Voltage

V R(RMS)

Average Rectified Forward Current (Note 1.)

V R(equiv)

I O

3.0

0.2 V R(dc) , T L = 95

(R q JA = 28

C/W, P.C. Board Mounting, see Note 5.)

Ambient Temperature

Rated V R(dc) , P F(AV) = 0

R q JA = 28 ° C/W

T A

° C

Non–Repetitive Peak Surge Current

(Surge applied at rated load conditions, half wave, single phase

60 Hz, T L = 75

I FSM

80 (for one cycle)

Operating and Storage Junction Temperature Range

(Reverse Voltage applied)

T J , T stg

65 to +125

° C

Peak Operating Junction Temperature (Forward Current applied)

T J(pk)

150

° C

*THERMAL CHARACTERISTICS (Note 5.)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R q JA

C/W

*ELECTRICAL CHARACTERISTICS (T L = 25 ° C unless otherwise noted) (Note 1.)

Characteristic

Symbol

1N5820

1N5821

1N5822

Unit

Maximum Instantaneous Forward Voltage (Note 2.)

(i F = 1.0 Amp)

(i F = 3.0 Amp)

(i F = 9.4 Amp)

V F

0.370

0.475

0.850

0.380

0.500

0.900

0.390

0.525

0.950

Maximum Instantaneous Reverse Current

@ Rated dc Voltage (Note 2.)

T L = 25

i R

T L = 100

2.0

1. Lead Temperature reference is cathode lead 1/32 , from case.

2. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2.0%.

*Indicates JEDEC Registered Data for 1N5820–22.

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1N5820, 1N5821, 1N5822

NOTE 3. — DETERMINING MAXIMUM RATINGS

Reverse power dissipation and the possibility of thermal

runaway must be considered when operating this rectifier at

reverse voltages above 0.1 V RWM . Proper derating may be

accomplished by use of equation (1).

T A(max) = T J(max)

F (4)

The factor F is derived by considering the properties of the

various rectifier circuits and the reverse characteristics of

Schottky diodes.

EXAMPLE: Find T A(max) for 1N5821 operated in a

12–volt dc supply using a bridge circuit with capacitive filter

such that I DC = 2.0 A (I F(AV) = 1.0 A), I (FM) /I (AV) = 10, Input

Voltage = 10 V (rms) , R

qJA P R(AV) (1)

where T A(max) = Maximum allowable ambient temperature

T J(max) = Maximum allowable junction temperature

(125

qJA P F(AV)

C or the temperature at which thermal

runaway occurs, whichever is lowest)

P F(AV) = Average forward power dissipation

P R(AV) = Average reverse power dissipation

C/W.

Step 1. Find V R(equiv). Read F = 0.65 from Table 1. ,

qJA = 40

qJA = Junction–to–ambient thermal resistance

Figures 1, 2, and 3 permit easier use of equation (1) by

taking reverse power dissipation and thermal runaway into

consideration. The figures solve for a reference temperature

as determined by equation (2).

T R = T J(max)

V R(equiv) = (1.41) (10) (0.65) = 9.2 V.

Step 2. Find T R from Figure 2. Read T R = 108

C/W.

Step 3. Find P F(AV) from Figure 6. **Read P F(AV) = 0.85 W

@ I (FM)

@ V R = 9.2 V and R

qJA = 40

qJA P R(AV)

(2)

Substituting equation (2) into equation (1) yields:

T A(max) = T R

I (AV) 10 and I F(AV) 1.0 A.

Step 4. Find T A(max) from equation (3).

T A(max) = 108

qJA P F(AV) (3)

Inspection of equations (2) and (3) reveals that T R is the

ambient temperature at which thermal runaway occurs or

where T J = 125

(0.85) (40) = 74

C, when forward power is zero. The

transition from one boundary condition to the other is

evident on the curves of Figures 1, 2, and 3 as a difference

in the rate of change of the slope in the vicinity of 115

**Values given are for the 1N5821. Power is slightly lower

for the 1N5820 because of its lower forward voltage, and

higher for the 1N5822. Variations will be similar for the

MBR–prefix devices, using P F(AV) from Figure 6.

C. The

data of Figures 1, 2, and 3 is based upon dc conditions. For

Table 1. Values for Factor F

Circuit

Half Wave

Full Wave, Bridge

Full Wave,

Center Tapped*†

Load

Resistive

Capacitive*

Resistive

Capacitive

Resistive

Capacitive

Sine Wave

0.5

1.3

0.5

0.65

1.0

1.3

Square Wave

0.75

1.5

0.75

1.5

*Note that V R(PK) 2.0 V in(PK) . †Use line to center tap voltage for V in .

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use in common rectifier circuits, Table 1. indicates

suggested factors for an equivalent dc voltage to use for

conservative design, that is:

V R(equiv) = V (FM)

1N5820, 1N5821, 1N5822

125

8.0

115

8.0

105

R JA ( ° C/W) = 70

2.0

3.0

4.0

5.0

7.0

3.0

4.0

5.0

V R , REVERSE VOLTAGE (VOLTS)

7.0

V R , REVERSE VOLTAGE (VOLTS)

Figure 1. Maximum Reference Temperature

1N5820

Figure 2. Maximum Reference Temperature

1N5821

125

MAXIMUM

TYPICAL

115

105

8.0

R JA ( ° C/W) = 70

BOTH LEADS TO HEAT SINK,

EQUAL LENGTH

5.0

4.0

5.0

7.0

1/8

2/8

3/8

4/8

5/8

6/8

7/8

1.0

V R , REVERSE VOLTAGE (VOLTS)

L, LEAD LENGTH (INCHES)

Figure 3. Maximum Reference Temperature

1N5822

Figure 4. Steady–State Thermal Resistance

1.0

The temperature of the lead should be measured using a ther

mocouple placed on the lead as close as possible to the tie point.

The thermal mass connected to the tie point is normally large

enough so that it will not significantly respond to heat surges

generated in the diode as a result of pulsed operation once

steady-state conditions are achieved. Using the measured val

ue of T L , the junction temperature may be determined by:

T J = T L + T JL

LEAD LENGTH = 1/4 ,

0.5

0.3

0.2

P pk

DUTY CYCLE = t p /t 1

PEAK POWER, P pk , is peak of an

equivalent square power pulse.

t p

0.1

TIME

t 1

0.05

D T JL = P pk • R q JL [D + (1 - D) • r(t 1 + t p ) + r(t p ) - r(t 1 )] where:

D T JL = the increase in junction temperature above the lead temperature.

r(t) = normalized value of transient thermal resistance at time, t, i.e.:

r(t 1 + t p ) = normalized value of transient thermal resistance at time

t 1 + t p , etc.

0.03

0.02

0.01

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0 k

2.0 k

5.0 k

10 k

20 k

t, TIME (ms)

Figure 5. Thermal Response

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1N5820, 1N5821, 1N5822

7.0

5.0

NOTE 4. – APPROXIMATE THERMAL CIRCUIT MODEL

SINE WAVE

I (FM)

I (AV)

R q S(A)

R q L(A)

R q J(A)

R q J(K)

R q L(K)

R q S(K)

3.0

2.0

(ResistiveLoad)

T A(A)

P D

T A(K)

T L(A)

T C(A)

T J

T C(K)

T L(K)

1.0

Capacitive

Loads

5.0

SQUARE WAVE

0.7

0.5

Use of the above model permits junction to lead thermal

resistance for any mounting configuration to be found. For

a given total lead length, lowest values occur when one side

of the rectifier is brought as close as possible to the heat sink.

Terms in the model signify:

T A = Ambient Temperature

0.3

0.2

T J 9 125 ° C

0.1

0.2 0.3

0.5

0.7 1.0

2.0

3.0

5.0

7.0 10

I F(AV) , AVERAGE FORWARD CURRENT (AMP)

T C = Case Temperature

T L = Lead Temperature

T J = Junction Temperature

Figure 6. Forward Power Dissipation 1N5820–22

q S = Thermal Resistance, Heat Sink to Ambient

L = Thermal Resistance, Lead to Heat Sink

J = Thermal Resistance, Junction to Case

P D = Total Power Dissipation = P F + P R

P F = Forward Power Dissipation

P R = Reverse Power Dissipation

(Subscripts (A) and (K) refer to anode and cathode sides,

respectively.) Values for thermal resistance components

are:

R qL = 42

C/W/in typically and 48

C/W/in maximum

C/W maximum

The maximum lead temperature may be found as follows:

T L = T J(max)

C/W typically and 16

T JL

where

T JL

JL · P D

NOTE 5. — MOUNTING DATA

Mounting Method 1

P.C. Board where available

copper surface is small.

Mounting Method 3

P.C. Board with

2–1/2 , x 2–1/2 ,

copper surface.

Data shown for thermal resistance junction–to–ambient (R q JA )

for the mountings shown is to be used as typical guideline values

for preliminary engineering, or in case the tie point temperature

cannot be measured.

L = 1/2 ,

TYPICAL VALUES FOR R

q JA IN STILL AIR

Mounting

Method

Lead Length, L (in)

Mounting Method 2

BOARD GROUND

PLANE

1/8

1/4

1/2

3/4

q JA

C/W

° C/W

VECTOR PUSH-IN

TERMINALS T-28

C/W

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R qJ = 10

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