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Voltage regulator diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
1/3 page (Datasheet)
M3D054
BZV55 series
Voltage regulator diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 21
199622345.020.png
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
FEATURES
DESCRIPTION
·
Total power dissipation:
max. 500 mW
Low-power voltage regulator diodes in small hermetically sealed glass
SOD80C SMD packages. The diodes are available in the normalized E24 ± 2%
(BZV55-B) and approx.
·
Two tolerance series:
±
2% and
5% (BZV55-C) tolerance range. The series consists of
37 types with nominal working voltages from 2.4 to 75 V.
±
approx. ± 5%
·
Working voltage range:
nom. 2.4 to 75 V (E24 range)
·
Non-repetitive peak reverse power
dissipation: max. 40 W.
handbook, 4 columns
k
a
APPLICATIONS
MAM215
·
Low-power voltage stabilizers or
voltage references.
The cathode is indicated by a yellow band.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I F
continuous forward current
-
250
mA
I ZSM
non-repetitive peak reverse current
t p = 100
m
s; square wave;
see Tables
1 and 2
T j =25
°
C prior to surge
P tot
total power dissipation
T amb £ 50 ° C; note 1
-
400
mW
tie-point
£
50
°
C; note 1
-
500
mW
P ZSM
non-repetitive peak reverse power
dissipation
t p = 100
m
s; square wave;
-
40
W
T j =25
°
C prior to surge; see Fig.3
T stg
storage temperature
-
65
+200
°
C
T j
junction temperature
- 65
+200
° C
Note
1. Device mounted on a ceramic substrate of 10
´
10
´
0.6 mm.
1999 May 21
2
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Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
ELECTRICAL CHARACTERISTICS
Total BZV55-B and C series
T j =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V F
forward voltage
I F = 10 mA; see Fig.4
0.9
V
I R
reverse current
BZV55-B/C2V4
V R =1V
50
m A
BZV55-B/C2V7
V R =1V
20
A
BZV55-B/C3V0
V R =1V
10
A
BZV55-B/C3V3
V R =1V
5
A
BZV55-B/C3V6
V R =1V
5
m A
BZV55-B/C3V9
V R =1V
3
A
BZV55-B/C4V3
V R =1V
3
A
BZV55-B/C4V7
V R =2V
3
A
BZV55-B/C5V1
V R =2V
2
m A
BZV55-B/C5V6
V R =2V
1
A
BZV55-B/C6V2
V R =4V
3
A
BZV55-B/C6V8
V R =4V
2
A
BZV55-B/C7V5
V R =5V
1
m A
BZV55-B/C8V2
V R = 5 V
700
nA
BZV55-B/C9V1
V R = 6 V
500
nA
BZV55-B/C10
V R = 7 V
200
nA
BZV55-B/C11
V R = 8 V
100
nA
BZV55-B/C12
V R = 8 V
100
nA
BZV55-B/C13
V R = 8 V
100
nA
BZV55-B/C15 to 75
V R = 0.7V Znom
50
nA
1999 May 21
3
°
m
m
m
m
m
m
m
m
m
199622345.014.png
Table 1 Per type BZV55- B/C2V4 to B/C24
T j =25 ° C unless otherwise specified.
WORKING VOLTAGE
V Z (V)
at I Ztest =5mA
DIFFERENTIAL RESISTANCE
r dif ( W )
TEMP. COEFF.
S Z (mV/K)
at I Ztest =5mA
(see Figs 5 and 6)
DIODE CAP.
C d (pF)
at f = 1 MHz;
V R =0V
NON-REPETITIVE
PEAK REVERSE
CURRENT
I ZSM (A)
at t p = 100
BZV55-B
or C
XXX
Tol. approx.
±
at
I Ztest =1mA
at
I Ztest =5mA
Tol.
±
2% (B)
5% (C)
s;
T amb =25 ° C
m
MIN.
MAX.
MIN.
MAX.
TYP. MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
2V4
2.35
2.45
2.2
2.6
275
600
70
100
-
3.5
-
1.6
0
450
6.0
2V7
2.65
2.75
2.5
2.9
300
600
75
100
- 3.5
- 2.0
0
450
6.0
3V0
2.94
3.06
2.8
3.2
325
600
80
95
-
3.5
-
2.1
0
450
6.0
3V3
3.23
3.37
3.1
3.5
350
600
85
95
-
3.5
-
2.4
0
450
6.0
3V6
3.53
3.67
3.4
3.8
375
600
85
90
-
3.5
-
2.4
0
450
6.0
3V9
3.82
3.98
3.7
4.1
400
600
85
90
- 3.5
- 2.5
0
450
6.0
4V3
4.21
4.39
4.0
4.6
410
600
80
90
-
3.5
-
2.5
0
450
6.0
4V7
4.61
4.79
4.4
5.0
425
500
50
80
-
3.5
-
1.4
0.2
300
6.0
5V1
5.00
5.20
4.8
5.4
400
480
40
60
-
2.7
-
0.8
1.2
300
6.0
5V6
5.49
5.71
5.2
6.0
80
400
15
40
- 2.0
1.2
2.5
300
6.0
6V2
6.08
6.32
5.8
6.6
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.66
6.94
6.4
7.2
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.35
7.65
7.0
7.9
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
8.04
8.36
7.7
8.7
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
8.92
9.28
8.5
9.6
40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.80 10.20
9.4
10.6
50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.80 11.20
10.4
11.6
50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.80 12.20
11.4
12.7
50
150
10
25
6.0
8.4
10.0
85
2.5
13
12.70 13.30
12.4
14.1
50
170
10
30
7.0
9.4
11.0
80
2.5
15
14.70 15.30
13.8
15.6
50
200
10
30
9.2
11.4
13.0
75
2.0
16
15.70 16.30
15.3
17.1
50
200
10
40
10.4
12.4
14.0
75
1.5
18
17.60 18.40
16.8
19.1
50
225
10
45
12.4
14.4
16.0
70
1.5
20
19.60 20.40
18.8
21.2
60
225
15
55
14.4
16.4
18.0
60
1.5
22
21.60 22.40
20.8
23.3
60
250
20
55
16.4
18.4
20.0
60
1.25
24
23.50 24.50
22.8
25.6
60
250
25
70
18.4
20.4
22.0
55
1.25
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Table 2 Per type BZV55- B/C27 to B/C75
T j =25 ° C unless otherwise specified.
WORKING VOLTAGE
V Z (V)
at I Ztest =2mA
DIFFERENTIAL RESISTANCE
r dif ( W )
TEMP. COEFF.
S Z (mV/K)
at I Ztest =2mA
(see Figs 5 and 6)
DIODE CAP.
C d (pF)
at f = 1 MHz;
V R =0V
NON-REPETITIVE
PEAK REVERSE
CURRENT
I ZSM (A)
at t p = 100
BZV55-B
or C
XXX
Tol. approx.
±
at
I Ztest = 0.5 mA
at
I Ztest =2mA
Tol.
±
2% (B)
5% (C)
s;
T amb =25 ° C
m
MIN.
MAX.
MIN.
MAX.
TYP.
MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
27
26.50 27.50
25.1
28.9
65
300
25
80
21.4 23.4 25.3
50
1.0
30
29.40 30.60
28.0
32.0
70
300
30
80
24.4 26.6 29.4
50
1.0
33
32.30 33.70
31.0
35.0
75
325
35
80
27.4 29.7 33.4
45
0.9
36
35.30 36.70
34.0
38.0
80
350
35
90
30.4 33.0 37.4
45
0.8
39
38.20 39.80
37.0
41.0
80
350
40
130
33.4 36.4 41.2
45
0.7
43
42.10 43.90
40.0
46.0
85
375
45
150
37.6 41.2 46.6
40
0.6
47
46.10 47.90
44.0
50.0
85
375
50
170
42.0 46.1 51.8
40
0.5
51
50.00 52.00
48.0
54.0
90
400
60
180
46.6 51.0 57.2
40
0.4
56
54.90 57.10
52.0
60.0
100
425
70
200
52.2 57.0 63.8
40
0.3
62
60.80 63.20
58.0
66.0
120
450
80
215
58.8 64.4 71.6
35
0.3
68
66.60 69.40
64.0
72.0
150
475
90
240
65.6 71.7 79.8
35
0.25
75
73.50 76.50
70.0
79.0
170
500
95
255
73.4 80.2 88.6
35
0.2
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