EMIF04-MMC02F2.pdf

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®
EMIF04-MMC02F2
IPAD™
4 LINES EMI FILTER
INCLUDING ESD PROTECTION
MAIN PRODUCT CHARACTERISTICS:
Where EMI filtering in ESD sensitive equipment is
required:
■
MultiMedia Card for mobile phones, Personal
Digital Assistant, Digital Camera, MP3 players...
DESCRIPTION
The EMIF04-MMC02 is a highly integrated devic-
es designed to suppress EMI/RFI noise for Multi-
Media Card port. The EMIF04 flip chip packaging
means the package size is equal to the die size.
This filter includes an ESD protection circuitry
which prevents the device from destruction when
subjected to ESD surges up 15kV.
Flip-Chip
(11 Bumps)
Table 1: Order Code
Part Number
Marking
BENEFITS
■
EMI symmetrical (I/O) low-pass filter
EMIF04-MMC02F2
FH
■
High efficiency in EMI filtering
Figure 1: Pin Configuration (ball side)
Lead free package
■
Very low PCB space consuming:
1.57 mm x 2.07 mm
■
3
2
1
Very thin package: 0.65 mm
■
High efficiency in ESD suppression
■
I1
O1
A
High reliability offered by monolithic integration
■
High reducing of parasitic elements through
integration & wafer level packaging.
■
I2
VD2
O2
B
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2
Level 4
I3
VD1
O3
C
15kV (air discharge)
8kV (contact discharge)
I4
GND
O4
D
Figure 2: Configuration
VD1
VD2
R20
R10
R1
I1
I2
I3
I4
O1 (Data)
O2 (CLK)
O3 (CMD)
O4
R2
R3
R4
Cline = 20pF max.
GND
TM: IPAD is a trademark of STMicroelectronics.
October 2004
REV. 1
1/7
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EMIF04-MMC02F2
Table 2: Absolute Ratings (T amb = 25°C))
Symbol
Parameter and test conditions
Value
Unit
P R
DC power per resistor
70
mW
T j
Maximum junction temperature
125
°C
T op
Operating temperature range
- 40 to + 85
°C
T stg
Storage temperature range
- 55 to + 150
°C
Table 3: Electrical Characteristics (T amb = 25°C )
Symbol Parameter
V BR Breakdown voltage
I RM Leakage current @ V RM
V RM Stand-off voltage
V CL
Clamping voltage
R d
Dynamic impedance
I PP
Peak pulse current
R I/O
Series resistance between Input & Output
C line Input capacitance per line
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V BR
I R = 1 mA
6
V
I RM
V RM = 3V
100
500
nA
C line
@ 0V
20
pF
R 1 ,R 2 ,R 3 ,R 4 Tolerance ± 5%
47
Ω
R 10
Tolerance ± 5%
13
k
Ω
R 20
Tolerance ± 5%
56
k
Ω
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EMIF04-MMC02F2
Figure 3: S21 (dB) attenuation measurement
and Aplac simulation
Figure 4: Crosstalk measurements
EMIF04-MMC02F2: Aplac vs measurement (C3/C1 line)
Xtalk measurements C3/B1
0.00
0.00
dB
dB
- 5.00
Simulation
-10.00
- 10.00
-20.00
- 15.00
Measurement
- 20.00
-30.00
- 25.00
-40.00
- 30.00
-50.00
- 35.00
-60.00
- 40.00
- 45.00
-70.00
- 50.00
-80.00
1.0M
3.0M
10.0M
30.0M
100.0M 300.0M
1.0G
3.0G
1.0M
3.0M
10.0M 30.0M 100.0M 300.0M
1.0G
3.0G
f/Hz
f/Hz
Figure 5: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
Figure 6: ESD response to IEC61000-4-2 (-15kV
air discharge) on one input V(in) and on one
output (Vout)
V(in)
V(in)
V(out)
V(out)
Figure 7: Junction capacitance versus reverse
voltage applied (typical values)
C(pF)
20
18
F=1MHz
V osc =30mV RMS
T j =25°C
16
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V R (V)
3/7
-
-
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EMIF04-MMC02F2
Figure 8: Aplac model device structure
B2
C2
R20
R10
A3
R1
A2
B3
R2
B1
C3
R3
C1
D3
R4
D1
MODEL = demif04
MODEL = demif04
MODEL = demif04_gnd
120pH
DEMIF04
BV = 7
IBV = 1m
CJO = Cz
M = 0.3333
RS = 1
VJ = 0.6
TT = 100n
DEMIF04 gnd
BV = 7
IBV = 1m
CJO = Cz_gnd
M = 0.3333
RS = 1
VJ = 0.6
TT = 100n
100m
D2
Figure 9: Aplac model connections
D2
Cins
Rins
Rins
Cins
R1 47 opt
R2 47
R3 47
R4 47
R10 13k
R20 56k
A3
A2
Lbump
Cins
Rins
Rins
Cins
Rbump
Cz 15pF opt
Cz_gnd 45pF opt
Ls 450pH opt
Rs 300m
Rbump 50m
B3
B1
Cins
Rins
Rins
Cins
C3
Lhole
C1
cap_hole
Lbump 50pH
lhole 940pH opt
Rhole 100m
cap_hole 0.15pF
Cins 200fF
Rins 10Meg
Cins
Rins
Rhole
Rins
Cins
D3
D1
Rins
Cins
Rins
Cins
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EMIF04-MMC02F2
Figure 10: Order Code
EMIF yy - xxx zz Fx
EMI Filter
Number of lines
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
F = Flip-Chip
x = 1: 500µm, Bump = 315µm
= 2: Leadfree Pitch = 500µm, Bump = 315µm
= 3: Leadfree Pitch = 400µm, Bump = 250µm
Figure 11: FLIP-CHIP Package Mechanical Data
500µm ± 50
315µm ± 50
650µm ± 65
1.57mm ± 50µm
Figure 12: Foot Print Recommendations
Figure 13: Marking
Dot, ST logo
xx = marking
545
400
z = packaging location
Copper pad Diameter :
250µm recommended , 300µm max
yww = datecode
(y = year
ww = week)
E
Solder stencil opening : 330µm
x
y
x
w
z
w
Solder mask opening recommendation :
340µm min for 315µm copper pad diameter
All dimensions in µm
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Information
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