EMIF10-LCD02F3.pdf

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10-line IPAD™, EMI filter and ESD protection for LCD and cameras
EMIF10-LCD02F3
10-line IPAD™, EMI filter and ESD protection for LCD and cameras
Features
Lead-free package
EMI symmetrical (I/O) low-pass filter
High efficiency in EMI filtering
400 µm pitch
Compatible with high speed data rate
Flip Chip
24 bumps
Very low PCB space occupation: < 4mm 2
Very thin package: 0.60 mm
High efficiency in ESD suppression
Figure 1. Pin layout (bump side)
High reliability offered by monolithic integration
High reduction of parasitic elements through
integration and wafer level packaging
5
4
3
2
1
O1
O2
GND
I1
I2
A
Complies with the following standards
O3
O4
I3
I4
B
IEC61000-4-2 level 4 on inputs and outputs
– 15 kV (air discharge)
– 8 kV (contact discharge)
O5
O6
GND
I5
I6
C
D
O7
O8
GND
I7
I8
MIL STD 883E - Method 3015-6 Class 3
O9
O10
GND
I9
I10
E
Applications
Where EMI filtering in ESD sensitive equipment is
required :
Figure 2. Device configuration
LCD for mobile phones
Low-pass Filter
Computers and printers
Communication systems
Input
Output
MCU boards
Description
Ri/o = 70
Cline = 30pF
Ω
GND
GND
GND
The EMIF10-LCD02F3 is a 10-line highly
integrated device designed to suppress EMI/RFI
noise in all systems subjected to electromagnetic
interference. The EMIF10 Flip Chip packaging
means the package size is equal to the die size.
This filter includes ESD protection circuitry, which
prevents damage to the protected device when
subjected to ESD surges up 15kV.
TM : IPAD is a trademark of STMicroelectronics.
April 2008
Rev 2
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Characteristics
EMIF10-LCD02F3
1
Characteristics
Table 1.
Absolute maximum ratings (T amb = 25 °C)
Symbol
Parameter and test conditions
Value
Unit
T j
Maximum junction temperature
125
°C
T op
Operating temperature range
-40 to +85
°C
T stg
Storage temperature range
-55 to 150
°C
Table 2.
Electrical characteristics (T amb = 25 °C)
Symbol
Parameters
V BR
Breakdown voltage
I
I RM
Leakage current @ V RM
I F
V RM
Stand-off voltage
V F
V CL
Clamping voltage
V CL
V BR
V RM
V
I RM
I R
I PP
Peak pulse current
R I/O
Series resistance between Input & Output
I PP
C line
Input capacitance per line
Symbol
Test conditions
Min
Typ
Max
Unit
V BR
I R = 1 mA
6
8
10
V
I RM
V RM = 3 V
50
200
nA
R 2
Tolerance ± 20%
70
Ω
C line
Vline = 0 V, V OSC = 30 mV, F =1 MHz
30
pF
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EMIF10-LCD02F3
Characteristics
Figure 3. S21(dB) all lines attenuation
measurement and Aplac simulation
Figure 4. Analog cross talk measurement
0.00
dB
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
-90.00
-100.00
100.0k
1.0M
10.0M
100.0M
1.0G
f/Hz
Xtalk 1/2
Figure 5. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one input
and on one output
Figure 6. ESD response to IEC 61000-4-2
(-15 kV air discharge) on one input
and on one output
Input
10V/d
Input
10V/d
Output
10V/d
Output
10V/d
100ns/d
100ns/d
Figure 7. Line capacitance versus applied voltage
C (pF)
line
30
25
20
15
10
5
V (V)
line
0
0
1
2
3
4
5
6
3/8
0.00
dB
0.00
dB
-10.00
-10.00
-20.00
-20.00
-30.00
-30.00
-40.00
-40.00
-50.00
-50.00
-60.00
-60.00
-70.00
-70.00
-80.00
-80.00
-90.00
-90.00
-100.00
-100.00
100.0k
100.0k
1.0M
1.0M
10.0M
10.0M
100.0M
100.0M
1.0G
1.0G
f/Hz
f/Hz
Xtalk 1/2
Xtalk 1/2
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Application information
EMIF10-LCD02F3
2
Application information
Figure 8. Device structure (one cell)
Lbump Rbump
Rline
Rbump
Lbump
O1
I1
MODEL = D1
MODEL = D2
bulk
bulk
MODEL = D3
Rbump
Rbump
Rbump
Rbump
Cbump
Cbump
Cbump
Cbump
Lbump
Lbump
Lbump
Lbump
Rgnd
Rgnd
Rgnd
Rgnd
Lgnd
Lgnd
Lgnd
Lgnd
Figure 9. Aplac model variables
aplacvar Rline 70
aplacvar C_d1 15p
aplacvar C_d2 15p
aplacvar C_d3 600p
aplacvar Ls 950pH
aplacvar Rs 150m
aplacvar Lbump 50pH
aplacvar Rbump 20m
aplacvar Cbump 150f
aplacvar Lgnd 50pH
aplacvar Rgnd 100m
aplacvar Rsub 10m
Diode D1
BV=7
IBV=1m
CJO=C_d1
M=0.28
RS=0.1
VJ=0.6
TT=100n
Diode D2
BV=7
IBV=1m
CJO=C_d2
M=0.28
RS=0.1
VJ=0.6
TT=100n
Diode D3
BV=7
IBV=1m
CJO=C_d3
M=0.28
RS=0.01
VJ=0.6
TT=100n
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EMIF10-LCD02F3
Ordering information scheme
3
Ordering information scheme
Figure 10. Ordering information scheme
EMIF yy - xxx zz F3
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10 (pF)
or
3 letters = application
2 digits = version
Package
F = Flip Chip
3 = Lead-free, pitch = 400 µm, bump = 255 µm
4
Package information
In order to meet environmental requirements, ST offers these devices in ECOPACK ®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the inner box label, in compliance with JEDEC
Standard JESD97. The maximum ratings related to soldering conditions are also marked on
the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at
www.st.com .
Figure 11. Package dimensions
400µm ± 40
255µm± 40
605µm ± 55
185µ m ± 10
1.97mm ± 30µm
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