2N2369_CNV_2.pdf

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NPN switching transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2369
NPN switching transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 20
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Philips Semiconductors
Product specification
NPN switching transistor
2N2369
FEATURES
PINNING
·
Low current (max. 200 mA)
PIN
DESCRIPTION
·
Low voltage (max. 15 V).
1
emitter
2
base
APPLICATIONS
3
collector, connected to case
·
High-speed switching
·
VHF amplification.
handbook, halfpage
1
3
2
DESCRIPTION
2
NPN switching transistor in a TO-18 metal package.
3
MAM264
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
40
V
V CEO
collector-emitter voltage
open base
-
15
V
I C
collector current (DC)
-
200
mA
P tot
total power dissipation
T amb £
25
°
C
-
360
mW
h FE
DC current gain
I C = 10 mA; V CE =1V; T j =25
°
C
40
120
f T
transition frequency
I C = 10 mA; V CE = 10 V; f = 100 MHz
500
-
MHz
t off
turn-off time
I Con = 10 mA; I Bon = 3 mA; I Boff =
-
1.5 mA
-
30
ns
1997 Jun 20
2
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Philips Semiconductors
Product specification
NPN switching transistor
2N2369
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
40
V
V CEO
collector-emitter voltage
open base
-
15
V
V EBO
emitter-base voltage
open collector
-
5
V
I C
collector current (DC)
-
200
mA
I CM
peak collector current
t p =10ms
-
300
mA
I BM
peak base current
-
100
mA
P tot
total power dissipation
T amb £ 25 ° C
-
360
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
200
°
C
T amb
operating ambient temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient in free air
480
K/W
R th j-c
thermal resistance from junction to case
145
K/W
1997 Jun 20
3
22885392.021.png
Philips Semiconductors
Product specification
NPN switching transistor
2N2369
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =20V
-
400
nA
I E = 0; V CB =20V; T j = 125 ° C
-
30
m A
I EBO
emitter cut-off current
I C = 0; V EB =4V
-
100
nA
h FE
DC current gain
I C = 10 mA; V CE = 1 V; note 1
40
120
I C = 10 mA; V CE =1V; T j =
-
55
°
C; note 1 20
-
I C = 100 mA; V CE = 2 V; note 1
20
-
V CEsat
collector-emitter saturation voltage I C = 10 mA; I B =1mA
-
250
mV
V BEsat
base-emitter saturation voltage
I C = 10 mA; I B = 1 mA
700
850
mV
C c
collector capacitance
I E =i e = 0; V CB =5V; f=1MHz
-
4
pF
f T
transition frequency
I C = 10 mA; V CE = 10 V; f = 100 MHz
500
-
MHz
Switching times (between 10% and 90% levels); see Fig.2
t on
turn-on time
I Con = 10 mA; I Bon = 3 mA; I Boff =
-
1.5 mA
-
10
ns
t d
delay time
-
4
ns
t r
rise time
-
6
ns
t off
turn-off time
-
30
ns
t s
storage time
-
15
ns
t f
fall time
-
15
ns
Note
1. Pulse test: t p £
300
m
s;
d£
0.01.
handbook, full pagewidth
V BB
V CC
R B
R C
oscilloscope
(probe)
450
V o
(probe)
450
oscillo scope
W
W
V i
R2
DUT
R1
MLB826
V i = 0.5 V to 4.2 V; T = 500 m s; t p =10 m s; t r =t f £ 3 ns.
R1 = 56
W
; R2 = 1 k
W
; R B =1k
W
; R C = 270
W
.
V BB = 0.2 V; V CC = 2.7 V.
Oscilloscope input impedance Z i =50
W
.
Fig.2 Test circuit for switching times.
1997 Jun 20
4
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Philips Semiconductors
Product specification
NPN switching transistor
2N2369
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
j
a
seating plane
B
w
M
A
M B M
1
b
k
D 1
2
3
a
A
D
A
L
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D 1
j
k
L
w
a
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45
°
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT18/13
B11/C7 type 3
TO-18
97-04-18
1997 Jun 20
5
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