2n5191-d.pdf

ON Semiconductor

Silicon NPN Power Transistors

2N5191

2N5192

. . . for use in power amplifier and switching circuits, — excellent

safe area limits. Complement to PNP 2N5194, 2N5195.

*ON Semiconductor Preferred Device

*MAXIMUM RATINGS

4 AMPERE

POWER TRANSISTORS

SILICON NPN

60–80 VOLTS

40 WATTS

Rating ÎÎÎÎÎ

Symbol ÎÎÎÎ

2N5191 ÎÎÎÎ

2N5192 ÎÎÎ

Unit

Collector–Emitter Voltage ÎÎÎÎÎ

V CEO ÎÎÎÎ

60 ÎÎÎÎ

80 ÎÎÎ

Vdc

Collector–Base Voltage ÎÎÎÎÎ

V CB ÎÎÎÎ

60 ÎÎÎÎ

80 ÎÎÎ

Vdc

Emitter–Base Voltage ÎÎÎÎÎ

V EB ÎÎÎÎÎÎÎ

5.0 ÎÎÎ

Vdc

Collector Current ÎÎÎÎÎ

I C ÎÎÎÎÎÎÎ

4.0 ÎÎÎ

Adc

Base Current

I B ÎÎÎÎÎÎÎ

1.0

Adc

Total Power Dissipation @ T C = 25 C

Derate above 25 C

P D ÎÎÎÎÎÎÎ

320

Watts

mW/ C

Operating and Storage Junction

Temperature Range

T J , T stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol ÎÎÎÎÎÎ

Max

Unit

CASE 77–09

TO–225AA TYPE

Thermal Resistance, Junction to Case ÎÎÎÎÎ

q JC

3.12

*ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)

Characteristic

Symbol

Min ÎÎÎ

Max ÎÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I C = 0.1 Adc, I B = 0)

V CEO(sus)

Vdc

2N5191

2N5192

—

Collector Cutoff Current

(V CE = 60 Vdc, I B = 0)

I CEO ÎÎÎÎ

mAdc

2N5191

—

1.0

(V CE = 80 Vdc, I B = 0)

2N5192

Collector Cutoff Current

(V CE = 60 Vdc, V EB(off) = 1.5 Vdc)

I CEX

mAdc

2N5191

—

0.1

2.0

(V CE = 80 Vdc, V EB(off) = 1.5 Vdc)

2N5192

(V CE = 60 Vdc, V EB(off) = 1.5 Vdc, T C = 125 C)

2N5191

(V CE = 80 Vdc, V EB(off) = 1.5 Vdc, T C = 125 C)

2N5192

Collector Cutoff Current

(V CB = 60 Vdc, I E = 0)

I CBO ÎÎÎÎ

mAdc

2N5191

—

0.1

(V CB = 80 Vdc, I E = 0)

2N5192

Emitter Cutoff Current

(V BE = 5.0 Vdc, I C = 0)

I EBO

—

1.0 ÎÎÎÎ

mAdc

(1) Pulse Test: Pulse Width 300 m s, Duty Cycle 2.0%.

*Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

W Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 9

Publication Order Number:

2N5191/D

2N5191 2N5192

*ELECTRICAL CHARACTERISTICS — continued (T C = 25

C unless otherwise noted)

Characteristic

Symbol ÎÎÎ

Min ÎÎÎÎ

Max ÎÎÎ

Unit

ON CHARACTERISTICS

DC Current Gain (2)

(I C = 1.5 Adc, V CE = 2.0 Vdc)

h FE

—

2N5191

2N5192

7.0

100

—

(I C = 4.0 Adc, V CE = 2.0 Vdc)

2N5191

2N5192

Collector–Emitter Saturation Voltage (2)

(I C = 1.5 Adc, I B = 0.15 Adc)

(I C = 4.0 Adc, I B = 1.0 Adc)

V CE(sat) ÎÎÎ

Vdc

—

0.6

1.4

Base–Emitter On Voltage (2)

(I C = 1.5 Adc, V CE = 2.0 Vdc)

V BE(on)

— ÎÎÎÎ

1.2 ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(I C = 1.0 Adc, V CE = 10 Vdc, f = 1.0 MHz)

f T ÎÎÎ

2.0 ÎÎÎÎ

— ÎÎÎ

MHz

(2) Pulse Test: Pulse Width 300 m s, Duty Cycle 2.0%.

*Indicates JEDEC Registered Data.

T J = 150 ° C

7.0

5.0

V CE = 2.0 V

V CE = 10 V

3.0

2.0

1.0

0.7

0.5

0.3

25 ° C

-55 ° C

0.2

0.1

0.004

0.007 0.01

0.02

0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

4.0

I C , COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

2.0

T J = 25 ° C

1.6

1.2

I C = 10 mA

100 mA

1.0 A

3.0 A

0.8

0.4

0 0.05

0.07 0.1

0.2

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0

50 70 100

200 300

500

I B , BASE CURRENT (mA)

Figure 2. Collector Saturation Region

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2N5191 2N5192

2.0

+2.5

T J = 25 ° C

+2.0

+1.5

*APPLIES FOR I C /I B 3

h FE @V CE 2.0V

1.6

T J = -65 ° C to +150 ° C

+1.0

1.2

+0.5

-0.5

-1.0

-1.5

-2.0

-2.5

* q V for V CE(sat)

0.8

V BE(sat) @ I C /I B = 10

V BE @ V CE = 2.0 V

0.4

q V for V BE

V CE(sat) @ I C /I B = 10

0.005

0.01 0.02 0.03 0.05

0.1

0.2 0.3

0.5

1.0

2.0

3.0

4.0

0.005 0.01 0.02 0.03 0.05

0.1

0.2 0.3

0.5

1.0 2.0

3.0

4.0

I C , COLLECTOR CURRENT (AMP)

Figure 3. “On” Voltages

Figure 4. Temperature Coefficients

10 3

10 7

V CE = 30 V

I C = 10 x I CES

V CE = 30 V

10 2

10 6

10 1

T J = 150 ° C

I C 9 I CES

10 5

10 0

100 ° C

I C = 2 x I CES

FORWARD

10 4

REVERSE

10 -1

10 -2

25 ° C

10 3

(TYPICAL I CES VALUES

OBTAINED FROM FIGURE 5)

I CES

10 -3

10 2

-0.4

-0.3 -0.2 -0.1

0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

100

120

140

160

V BE , BASE-EMITTER VOLTAGE (VOLTS)

T J , JUNCTION TEMPERATURE ( ° C)

Figure 5. Collector Cut–Off Region

Figure 6. Effects of Base–Emitter Resistance

300

TURN-ON PULSE

V CC

R C

T J = +25 ° C

APPROX

+11 V

200

V in

SCOPE

R B

C jd <<C eb

V in

V EB(off)

t 1

100

t 3

-4.0 V

C eb

APPROX

+11 V

t 1 3 7.0 ns

100 < t 2 < 500 m s

t 3 < 15 ns

R B and R C varied

to obtain desired

current levels

C cb

V in

t 2

DUTY CYCLE 9 2.0%

APPROX -9.0 V

0.1

0.2 0.3 0.5

1.0

2.0

3.0 5.0

TURN-OFF PULSE

V R , REVERSE VOLTAGE (VOLTS)

Figure 7. Switching Time Equivalent Test Circuit

Figure 8. Capacitance

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2N5191 2N5192

2.0

t s 4

I C /I B = 10

T J = 25 ° C

1.0

0.7

0.5

1.0

0.7

0.5

t r @ V CC = 30 V

t f @ V CC = 30 V

0.3

0.2

t r @ V CC = 10 V

0.3

0.2

t f @ V CC = 10 V

0.1

I B1 = I B2

I C /I B = 10

t s 4 = t s - 1/8 t f

T J = 25 ° C

0.07

t d @ V EB(off) = 2.0 V

0.07

0.05

0.03

0.02

0.07 0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

4.0

0.05

0.07 0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

4.0

I C , COLLECTOR CURRENT (AMP)

Figure 9. Turn–On Time

Figure 10. Turn–Off Time

There are two limitations on the power handling ability of

a transistor; average junction temperature and second

breakdown. Safe operating area curves indicate I C – V CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 11 is based on T J(pk) = 150

5.0

5.0ms

100 m s

1.0ms

T J = 150 ° C

2.0

1.0

C; T C is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T J(pk)

SECONDARY BREAKDOWN LIMIT

THERMAL LIMIT AT T C = 25 ° C

BONDING WIRE LIMIT

0.5

C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

CURVES APPLY BELOW RATED V CEO

0.2

2N5191

2N5192

0.1

1.0

2.0

5.0

100

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 11. Rating and Thermal Data

Active–Region Safe Operating Area

1.0

0.7

0.5

D = 0.5

q JC(max) = 3.12 ° C/W 2N5190-92

q JC(max) = 2.08 ° C/W MJE5190-92

0.3

0.2

0.1

0.07

0.05

0.02

0.03

0.02

SINGLE PULSE

0.01

0.01 0.01

0.02 0.03

0.05

0.1

0.2

0.3 0.5 1.0

2.0

3.0 5.0 10

100

200

500

1000

t, TIME OR PULSE WIDTH (ms)

Figure 12. Thermal Response

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0.05

0.02

150

2N5191 2N5192

DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA

t P

A train of periodical power pulses can be represented by

the model shown in Figure A. Using the model and the

device thermal response, the normalized effective transient

thermal resistance of Figure 12 was calculated for various

duty cycles.

To find

P P

q JC (t), multiply the value obtained from Figure 12

by the steady state value

q JC .

Example:

The 2N5190 is dissipating 50 watts under the following

conditions: t 1 = 0.1 ms, t p = 0.5 ms. (D = 0.2).

Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,

the reading of r(t 1 , D) is 0.27.

The peak rise in function temperature is therefore:

t 1

1/f

Figure A

DUTY CYCLE, D = t 1 f - t 1

t P

PEAK PULSE POWER = P P

T = r(t) x P P x

q JC = 0.27 x 50 x 3.12 = 42.2

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