2SC5519.PDF

(47 KB) Pobierz
11047222 UNPDF
Power Transistors
2SC5519
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
15.5 ±0.5
φ
3.2 ±0.1
3.0 ±0.3
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
(4.0)
2.0 ±0.2
1.1 ±0.1
0.7 ±0.1
Absolute Maximum Ratings T C
=
25
°
C
5.45 ±0.3
Parameter
Symbol
Rating
Unit
10.9 ±0.5
Collector to base voltage
V CBO
1 700
V
1
23
Collector to emitter voltage
V CES
1 700
V
1 : Base
2 : Collector
3 : Emitter
TOP-3E Package
Emitter to base voltage
V EBO
7
V
Peak collector current
I CP
16
A
Collector current
I C
8
A
Internal Connection
Base current
I B
3
A
C
Collector power
T C = 25°C
P C
50
W
B
dissipation
T a = 25°C
3
Junction temperature
T j
150
°C
Storage temperature
T stg
−55 to +150
°C
E
Electrical Characteristics T C
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ Max
Unit
Collector cutoff current
I CBO
V CB = 1 000 V, I E = 0
50
µA
V CB = 1 700 V, I E = 0
1
mA
Emitter to base voltage
V EBO
I E = 500 mA, I C = 0
7
V
Forward current transfer ratio
h FE
V CE = 5 V, I C = 6 A
5
9
Collector to emitter saturation voltage
V CE(sat)
I C = 6 A, I B = 1.2 A
5
V
Base to emitter saturation voltage
V BE(sat)
I C = 6 A, I B = 1.2 A
1.5
V
Transition frequency
f T
V CE = 10 V, I C = 0.1 A, f = 0.5 MHz
3
MHz
Storage time
t stg
I C = 6 A, I B1 = 1.2 A, I B2 = −2.4 A
5.0
µs
Fall time
t f
0.5
µs
Diode forward voltage
V F
I F = 6 A
−2
V
1
2SC5519
11047222.006.png 11047222.007.png 11047222.008.png 11047222.009.png 11047222.001.png 11047222.002.png 11047222.003.png 11047222.004.png
2SC5519
Power Transistors
P C T a
Area of safe operation, horizontal operation ASO
100
20
(1) T C =Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
90
f=15.75kHz, T C <90˚C
Area of safe operation with
respect to the single pulse
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
80
15
70
60
50
(1)
10
40
30
5
20
10
(2)
(3)
<1mA
0
0
0
20
40
60
80
100
120
140
160
0
500
1000
1500
2000
Ambient temperature T a ( ˚C )
Collector to emitter voltage V CE ( V )
2
11047222.005.png
Zgłoś jeśli naruszono regulamin