2SK2864.PDF

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Ordering number : ENN6610
2SK2864
N-Channel Silicon MOSFET
2SK2864
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
Enables simplified fabrication, high-density mounting,
and miniaturization in end products due to the surface
mountable package.
Package Dimensions
unit : mm
2128
[2SK2864]
8.2
7.8
6.2
0.6
3
1.0
1 2
1.0
0.3
0.6
2.54
2.54
5.08
1 : Gate
2 : Source
3 : Drain
10.0
6.0
7.8
Specifications
Absolute Maximum Ratings at Ta=25
SANYO : ZP
°
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
V DSS
200
V
Gate-to-Source Voltage
V GSS
±
20
V
Drain Current (DC)
I D
20
A
Drain Current (Pulse)
I DP
PW £ 10 m s, duty cycle £ 1%
80
A
Allowable Power Dissipation
P D
Tc=25
°
C
50
W
Channel Temperature
Tch
150
° C
Storage Temperature
Tstg
--55 to +150
° C
Electrical Characteristics at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V (BR)DSS I D =1mA, V GS =0
200
V
Gate-to-Source Breakdown Voltage
V (BR)GSS I G = ± 100 m A, V DS =0
± 20
V
Zero-Gate Voltage Drain Current
I DSS
V DS =200V, V GS =0
100
m
A
Gate-to-Source Leakage Current
I GSS
V GS = ± 16V, V DS =0
± 10
m A
Cutoff Voltage
V GS (off)
V DS =10V, I D =1mA
2.0
4.0
V
Forward Transfer Admittance
½
yfs
½
V DS =10V, I D =10A
6
10
S
Static Drain-to-Source On-State Resistance R DS (on)
I D =10A, V GS =10V
90 120 m W
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13001 TS IM TA-3092
No.6610-1/4
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2SK2864
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Ciss1
V DS =0, f=1MHz
3000
3800
pF
Input Capacitance
Ciss2
V DS =20V, f=1MHz
1700
2150
pF
Output Capacitance
Coss
V DS =20V, f=1MHz
400
420
pF
Reverse Transfer Capacitance
Crss
V DS =20V, f=1MHz
150
185
pF
Turn-ON Delay Time
t d (on)
See specified Test Circuit
28
35
ns
Rise Time
t r
See specified Test Circuit
85
110
ns
Turn-OFF Delay Time
t d (off)
See specified Test Circuit
130
165
ns
Fall Time
t f
See specified Test Circuit
90
105
ns
Diode Forward Voltage
V SD
I S =20A, V GS =0
1.0
1.5
V
Gate resistance
Rg
f=1MHz
1.0
2.0
3.0
W
Switching Time Test Circuit
V IN
V DD =100V
10V
0V
I D =10A
R L =10 W
V IN
PW=10
m
s
D
V OUT
D.C. ² 1%
G
P. G
50 W
S
2SK2864
I D -- V DS
I D -- V GS
20
20
V DS =10V
18
5V
18
16
16
14
14
12
12
10
10
8
8
6
6
4
V GS =4V
4
2
2
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, V GS -- V
Drain-to-Source Voltage, V DS -- V
R DS (on) -- V GS
IT01918
R DS (on) -- Tc
IT01919
200
250
Tc=25°C
I D =10A
V GS =10V
I D =10A
180
200
160
140
150
120
100
100
80
50
60
40
0
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120
140 160
IT01921
Gate-to-Source Voltage, V GS -- V
Case Temperature, Tc --
°
C
IT01920
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2SK2864
100
½
yfs
½
-- I D
I F -- V SD
100
V DS =10V
7
5
3
2
V GS =0
7
5
3
2
10
5
3
2
10
7
5
3
2
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.1
0.01
0.1
2 3 57
1.0
2 3 57
10
2 3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Drain Current, I D -- A
IT01922
Diode Forward Voltage, V SD -- V
IT01923
Ciss, Coss, Crss -- V DS
V GS -- Qg
10000
10
f=1MHz
V DS =100V
I D =10A
7
5
3
2
9
Ciss
8
1000
7
7
5
3
2
6
5
4
100
3
7
5
3
2
2
1
10
0
10
20
30
40
50
60
70
80
90
100
0
0
5
10
15
20
25
30
35
40
45
IT01925
Drain-to-Source Voltage, V DS -- V
IT01924
Total Gate Charge, Qg -- nC
SW Time -- I D
A S O
1000
100
V DD =100V
V GS =10V
7
5
7
5
3
2
I DP =80A
<10µs
I D =20A
3
2
10
7
5
3
2
100
t f
Operation in
this area is
limited by R DS (on).
7
5
1.0
3
2
t d (on)
7
5
3
2
Tc=25°C
Single pulse
10
0.1
0.1
23 57
1.0
23 57
10
IT01926
1.0
2 3
5 7
10
2 3
5 7
100
2 3
1000
IT01927
Drain Current, I D -- A
Drain-to-Source Voltage, V DS -- V
P D -- Tc
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
IT01928
No.6610-3/4
5 7
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2SK2864
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.
PS
No.6610-4/4
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