CNY17.PDF

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CNY17.fm
CNY17
TRIOS
Phototransistor
Optocoupler
FEATURES
• High Current Transfer Ratio
CNY17-1, 40 to 80%
CNY17-2, 63 to 125%
CNY17-3, 100 to 200%
CNY17-4, 160 to 320%
• Breakdown Voltage, 5300 V
Dimensions in inches (mm)
3
2
1
pin one ID
Anode
1
6
Base
.248 (6.30)
.256 (6.50)
Cathode
2
5
Collector
• Field-Effect Stable by TRIOS—TRansparent
IOn Shield
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
•
RMS
4
5
6
NC
3
4
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
.048 (1.22)
.022 (0.55)
.300 (7.62)
typ.
DE
VDE #0884, Available with Option 1
.130 (3.30)
.150 ( 3 .81)
DESCRIPTION
4 °
typ.
18
°
.114 (2.90)
.130 (3.0)
.031 (0.80) min.
The CNY17 is an optically coupled pair consisting
of a Gallium Arsenide infrared emitting diode opti-
cally coupled to a silicon NPN phototransistor.
Signal information, including a DC level, can be trans-
mitted by the device while maintaining a high degree
of electrical isolation between input and output.
The CNY17 can be used to replace relays and trans-
formers in many digital interface applications, as well
as analog applications such as CRT modulation.
3
°
–9
°
.010 (.25)
typ.
.018 (0.45)
.022 (0.55)
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.300–.347
(7.62–8.81)
Characteristics
(
T
A
=25
°
C)
Parameter
Symbol
Values
Unit Condition
Emitter
Maximum Ratings
(
T
A
=25
°
C)
Forward Voltage
V
F
1.25
(
V
I
F
= 60 mA
Emitter
≤
1.65)
Reverse Voltage .............................................6.0 V
Forward Current .......................................... 60 mA
Surge Current (t
Breakdown Voltage
V
BR
≥
6.0
I
R
= 10 mA
s)................................. 2.5 A
Power Dissipation......................................100 mW
≤
10
µ
Reverse Current
I
R
0.01 (
≤
10)
µ
A
V
R
= 6.0 V
Capacitance
—
25
pF
V
=0 V, f=1.0 MHz
Detector
R
Collector-Emitter Breakdown Voltage..............70 V
Emitter-Base Breakdown Voltage ...................7.0 V
Collector Current ......................................... 50 mA
Collector Current (t <1.0 ms)..................... 100 mA
Power Dissipation......................................150 mW
Thermal Resistance
R
thjamb
750
K/W —
Detector
Capacitance
C
CE
5.2
6.5
7.5
pF
V
CE
=5.0 V, f=1.0 MHz
C
V
=5.0 V, f=1.0 MHz
CB
CB
C
V
=5.0 V, f=1.0 MHz
Package
EB
EB
Isolation Test Voltage (between emitter &
detector referred to climate DIN 50014,
part 2, Nov. 74) (t=1 sec)...................5300 V
Thermal Resistance
R
thjamb
500
K/W —
RMS
Package
Creepage Distance .................................
≥
7.0 mm
Collector-Emitter
Saturation Voltage
I
=10 mA,
F
Clearance Distance.................................
≥
7.0 mm
V
I
0.25 (
≤
0.4) V
=2.5 mA
CEsat
C
Isolation Thickness between
Emitter and Detector.............................
0.4 mm
Comparative Tracking Index per DIN IEC 112/
VDE0303, part 1 ........................................... 175
Isolation Resistance
≥
Coupling Capacitance
C
C
0.6
pF
—
V
IO
=500 V,
T
A
=25
°
C..............................
≥
10
12
Ω
V
=500 V,
T
=100
°
C............................
≥
10
11
Ω
IO
A
Storage Temperature...................–55
°
C to +150
°
C
Operating Temperature ...............–55
°
C to +100
°
C
C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
°
1.5 mm) ......... 260
°
C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–68
February 24, 2000-20
Junction Temperature................................... 100
≥
11073411.042.png 11073411.043.png 11073411.044.png 11073411.045.png 11073411.001.png 11073411.002.png 11073411.003.png 11073411.004.png 11073411.005.png 11073411.006.png 11073411.007.png
Current Transfer Ratio and Collector-Emitter Leakage Current by dash
number
(
T
A
=25
°
C)
Figure 3. Current transfer ratio versus
diode current ( T A =–25 ° C, V CE =5.0 V)
I C / I F =f ( I F )
-1
-2
-3
-4
Unit
I
C
/
I
F
at
V
CE
=5.0 V
(
I
=10 mA)
40-80
63-125
100-200
160-320
%
F
I
C
/
I
F
at
V
CE
=5.0 V
(
I
=1.0 mA)
30 (>13)
45 (>22)
70 (>34)
90 (>56)
%
F
Collector-Emitter
Leakage Current
(
2.0 (
≤
50) 2.0 (
≤
50) 5.0 (
≤
100) 5.0 (
≤
100) nA
V
=10 V) (
I
)
CE
CEO
1
2
3
4
Figure 1. Linear Operation
(without saturation)
I F
R L =75 Ω
I C
V CC =5 V
47 Ω
I
F
=10 mA,
V
CC
=5.0 V,
T
A
=25
°
C
Figure 4. Current transfer ratio versus
diode current ( T A =0°C, V CE =5.0 V)
I C / I F =f ( I F )
Load Resistance
R
L
75
W
Turn-On Time
t
ON
3.0
µ
s
Rise Time
t
r
2.0
µ
s
Turn-Off Time
t
OFF
2.3
µ
s
Fall Time
t
f
2.0
µ
s
Cut-off Frequency
f
CO
250
kHz
Figure 2. Switching Operation
(with saturation)
1
2
3
4
I F
1 K Ω
V CC =5 V
47
Ω
-1
-2 and -3
-4
( I F =5.0 mA)
Figure 5. Current transfer ratio versus
diode current ( T A =25°C, V CE =5.0 V)
I C / I F =f ( I F )
(
I
=20 mA)
(
I
=10 mA)
F
F
Turn-On Time
t ON
3.0
4.2
6.0
µ s
Rise Time
t f
2.0
3.0
4.6
µ s
Turn-Off Time
t OFF
18
23
25
µ s
Fall Time
t f
11
14
15
µ s
1
2
3
4
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
CNY17
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–69
February 24, 2000-20
11073411.008.png 11073411.009.png 11073411.010.png 11073411.011.png 11073411.012.png 11073411.013.png 11073411.014.png 11073411.015.png 11073411.016.png 11073411.017.png 11073411.018.png 11073411.019.png 11073411.020.png 11073411.021.png 11073411.022.png 11073411.023.png 11073411.024.png 11073411.025.png 11073411.026.png 11073411.027.png 11073411.028.png 11073411.029.png 11073411.030.png 11073411.031.png 11073411.032.png 11073411.033.png 11073411.034.png 11073411.035.png 11073411.036.png 11073411.037.png 11073411.038.png 11073411.039.png
Figure 6. Current transfer ratio versus
diode current ( T A =50°C)
V CE =5.0 V, I C / I F =f ( I F )
Figure 9. Transistor characteristics
(B=550) CNY17-3, -4 I C =f( V CE )
( T A =25°C, I F =0)
Figure 12. Collector emitter off-state
current I CEO =f (V, T) ( T A =25°C, I F =0)
1
2
3
4
Figure 7. Current transfer ratio versus
diode current ( T A =75°C) V CE =5.0 V
Figure 10. Output characteristics
CNY17-3, -4 ( T A =25°C) I C =f( V CE )
Figure 13. Saturation voltage versus
collector current and modulation
depth CNY17-1 V CE sat =f ( I C ) ( T A =25°C)
1
2
3
4
Figure 8. Current transfer ratio versus
temperature ( I F =10 mA, V CE =5.0 V)
I C / I F =f (T)
Figure 11. Forward voltage V F =f ( I F )
Figure 14. Saturation voltage versus
collector current and modulation
depth CNY17-2 V CE sat =f ( I C )
( T A =25°C)
4
3
2
1
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
CNY17
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–70
February 24, 2000-20
11073411.040.png
Figure 15. Saturation voltage versus
collector current and modulation
depth CNY17-3 V CE sat =f ( I C ) ( T A =25°C)
Figure 17. Permissible pulse load
D=parameter, T A =25°C, I F =f ( t p )
Figure 19. Permissible forward
current P tot =f ( T A )
Figure 16. Saturation voltage versus
collector current and modulation
depth CNY17-4 V CE sat =f ( I C ) ( T A =25°C)
Figure 18. Permissible power
dissipation transistor and diode
P tot =f ( T A )
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
CNY17
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–71
February 24, 2000-20
11073411.041.png

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