buz71a.pdf

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N-CHANNEL 50V - 0.085 OHM - 17A TO-220 STRIPFET POWER MOSFET
[
BUZ71
N - CHANNEL 50V - 0.085
STripFET
]
POWER MOSFET
W
- 17A TO-220
TYPE
V DSS
R DS(on)
I D
BUZ71
50 V
< 0.1
W
17 A
n
TYPICAL R DS(on) = 0.085 W
AVALANCHE RUGGED TECHNOLOGY
n
100% AVALANCHE TESTED
n
HIGH CURRENT CAPABILITY
n
175 o C OPERATING TEMPERATURE
n
3
2
1
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
TO-220
SOLENOID AND RELAY DRIVERS
n
REGULATORS
n
DC-DC & DC-AC CONVERTERS
n
MOTOR CONTROL, AUDIO AMPLIFIERS
n
n
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
V DS
Drain-source Voltage (V GS =0)
50
V
V DGR
Drain- gate Voltage (R GS =20k
W
)
50
V
V GS
Gate-source Voltage
±
20
V
I D
Drain Current (continuous) at T c =25 o C
17
A
I DM
Drain Current (pulsed)
68
A
P tot
Total Dissipation at T c =25 o C
60
W
T stg
Storage Temperature
-65 to 175
o C
T j
Max. Operating Junction Temperature
175
o C
DIN HUMIDITY CATEGORY (DIN 40040)
E
IEC CLIMATIC CATEGORY (DIN IEC 68-1)
55/150/56
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
July 1999
1/8
104209614.002.png
BUZ71
THERMAL DATA
R thj-case Thermal Resistance Junction-case
Max
2.5
o C/W
R thj-amb Thermal Resistance Junction-ambient
Max
62.5
o C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
17
A
E AS
Single Pulse Avalanche Energy
(starting T j =25 o C, I D =I AR ,V DD =25V)
50
mJ
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V (BR)DSS Drain-source
Breakdown Voltage
I D =250
m
AV GS =0
50
V
I DSS
Zero Gate Voltage
Drain Current (V GS =0)
V DS =MaxRating
V DS =MaxRating T j =125 o C
1
10
m
A
m
A
I GSS
Gate-body Leakage
Current (V DS =0)
V GS =
±
20 V
±
100
nA
ON ( * )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V GS(th) Gate Threshold Voltage V DS =V GS I D =1mA
2.1
3
4
V
R DS(on) Static Drain-source On
Resistance
V GS =10V I D = 9 A
0.085
0.1
W
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g fs (
*
)
rrd
Transconductance
V DS =25V I D =9A
4
7.7
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS =25V f=1MHz V GS = 0
760
100
30
pF
pF
pF
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
t r
t d(off)
t f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V DD =30V
I D =8A
20
65
70
35
ns
ns
ns
ns
R GS =50
W
V GS =10V
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BUZ71
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I SD
I SDM
Source-drain Current
Source-drain Current
(pulsed)
17
68
A
A
V SD (
*
) rwrdOnVlte I SD =28A V GS =0
1.8
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
I SD = 14 A di/dt = 100 A/
m
s
65
ns
V DD =30V T j =150 o C
Q rr
0.17
m
C
(
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
3/8
104209614.004.png
BUZ71
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
104209614.005.png
BUZ71
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
104209614.001.png

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