BCF30.PDF

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11066920 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCF29; BCF30
PNP general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 22
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Philips Semiconductors
Product specification
PNP general purpose transistors
BCF29; BCF30
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
Low voltage (max. 32 V).
1
base
2
emitter
APPLICATIONS
3
collector
·
Low level, low noise general purpose applications in
thick and thin-film circuits.
handbook, halfpage
3
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCF32 and BCF33.
3
1
MARKING
1
2
2
TYPE NUMBER
MARKING CODE
Top view
MAM256
BCF29
C7p
Fig.1 Simplified outline (SOT23) and symbol.
BCF30
C8p
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
-
32
V
V CEO
collector-emitter voltage
open base
-
-
32
V
I CM
peak collector current
-
- 200
mA
P tot
total power dissipation
T amb £
25
°
C
-
250
mW
h FE
DC current gain
I C =
-
2 mA; V CE =
-
5V
BCF29
120
260
BCF30
215
500
f T
transition frequency
I C =
-
10 mA; V CE =
-
5 V; f = 100 MHz
100
-
MHz
1997 May 22
2
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Philips Semiconductors
Product specification
PNP general purpose transistors
BCF29; BCF30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
-
32
V
V CEO
collector-emitter voltage
open base
-
-
32
V
V EBO
emitter-base voltage
open collector
-
- 5
V
I C
collector current (DC)
-
-
100
mA
I CM
peak collector current
-
-
200
mA
I BM
peak base current
-
-
100
mA
P tot
total power dissipation
T amb £ 25 ° C; note 1
-
250
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 May 22
3
11066920.030.png
Philips Semiconductors
Product specification
PNP general purpose transistors
BCF29; BCF30
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =
-
32 V
-
-
-
100 nA
I E = 0; V CB = - 32 V; T j = 100 ° C
-
-
- 10
m A
I EBO
emitter cut-off current
I C = 0; V EB =
-
5V
-
-
-
100 nA
h FE
DC current gain
I C =
-
10
m
A; V CE =
-
5V
BCF29
-
90
-
BCF30
-
150
-
h FE
DC current gain
I C =
-
2 mA; V CE =
-
5V
BCF29
120
-
260
BCF30
215
-
500
V CEsat
collector-emitter saturation voltage I C = - 10 mA; I B = - 0.5 mA
-
- 80
- 300 mV
I C =
-
50 mV; I B =
-
2.5 mA
-
-
150
-
mV
V BEsat
base-emitter saturation voltage
I C =
-
10 mA; I B =
-
0.5 mA
-
-
720
-
mV
I C =
-
50 mA; I B =
-
2.5 mA
-
-
810
-
mV
V BE
base-emitter voltage
I C = - 2 mA; V CE = - 5V
- 600
-
- 750 mV
C c
collector capacitance
I E =i e = 0; V CB =
-
10 V; f = 1 MHz
-
4.5
-
pF
f T
transition frequency
I C =
-
10 mA; V CE =
-
5 V; f = 100 MHz 100
-
-
MHz
F
noise figure
I C =
-
200
m
A; V CE =
-
5 V; R S =2k
W
;
-
1
4
dB
f = 1 kHz; B = 200 Hz
1997 May 22
4
11066920.031.png
Philips Semiconductors
Product specification
PNP general purpose transistors
BCF29; BCF30
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max.
b p
c
D
E
e
e 1
H E
L p
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT23
97-02-28
1997 May 22
5
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