BTA216X_SERIES_C_1.pdf

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Philips Semiconductors
Preliminary specification
Three quadrant triacs
BTA216X series C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
triacs in a plastic envelope intended
for use in circuits where high static and
BTA216X- 500C 600C 800C
dynamic dV/dt and high dI/dt can
V DRM
Repetitive peak off-state
500
600
800
V
occur. These devices will commutate
voltages
the full rated rms current at the
I T(RMS)
RMS on-state current
16
16
16
A
maximum rated junction temperature,
I TSM
Non-repetitive peak on-state
140
140
140
A
without the aid of a snubber.
current
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1
main terminal 1
T2
T1
2
main terminal 2
3
gate
case isolated
12 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V DRM
Repetitive peak off-state
-
500 1
600 1
800
V
voltages
I T(RMS)
RMS on-state current
full sine wave;
-
16
A
T mb
£
38 ˚C
I TSM
Non-repetitive peak
full sine wave;
on-state current
T j = 25 ˚C prior to
surge
t = 20 ms
-
140
A
t = 16.7 ms
-
150
A
I 2 t
I 2 t for fusing
t = 10 ms
-
98
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 20 A; I G = 0.2 A;
100
A/
m
s
on-state current after
dI G /dt = 0.2 A/
m
s
triggering
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
m
s.
October 1997
1
Rev 1.000
high commutation
22887924.004.png
Philips Semiconductors
Preliminary specification
Three quadrant triacs
BTA216X series C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance
with heatsink compound
-
-
4.0
K/W
without heatsink compound
-
-
5.5
K/W
R th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current 2
V D = 12 V; I T = 0.1 A
T2+ G+
2
18
35
mA
T2+ G-
2
21
35
mA
T2- G-
2
34
35
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
T2+ G+
-
-
20
mA
T2+ G-
-
-
30
mA
T2- G-
-
-
20
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
-
15
mA
V T
On-state voltage
I T = 20 A
-
1.2
1.5
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.7
1.5
V
V D = 400 V; I T = 0.1 A; T j = 125 ˚C
0.25
0.4
-
V
I D
Off-state leakage current V D = V DRM(max) ; T j = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. UNIT
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ; T j = 125 ˚C; exponential
1000
-
V/
m
s
off-state voltage
waveform; gate open circuit
dI com /dt
Critical rate of change of V DM = 400 V; T j = 125 ˚C; I T(RMS) = 16 A; without
3
14
A/ms
commutating current
snubber; gate open circuit
t gt
Gate controlled turn-on
I TM = 20 A; V D = V DRM(max) ; I G = 0.1 A;
-
2
m
s
time
dI G /dt = 5 A/
m
s
2 Device does not trigger in the T2-, G+ quadrant.
October 1997
2
Rev 1.000
high commutation
junction to heatsink
full or half cycle
22887924.005.png
Philips Semiconductors
Preliminary specification
Three quadrant triacs
BTA216X series C
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
max.
19
max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
123
0.4
M
1.0 (2x)
0.6
0.9
0.7
2.54
0.5
5.08
2.5
1.3
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
3
Rev 1.000
high commutation
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Philips Semiconductors
Preliminary specification
Three quadrant triacs
BTA216X series C
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Ó
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
4
Rev 1.000
high commutation
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
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