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CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate
March 1988
CD4001BM/CD4001BC Quad 2-Input
NOR Buffered B Series Gate
CD4011BM/CD4011BC Quad 2-Input
NAND Buffered B Series Gate
General Description
These quad gates are monolithic complementary MOS
(CMOS) integrated circuits constructed with N- and P-chan-
nel enhancement mode transistors. They have equal source
and sink current capabilities and conform to standard B se-
ries output drive. The devices also have buffered outputs
which improve transfer characteristics by providing very
high gain.
All inputs are protected against static discharge with diodes
to V
DD
and V
SS
.
Features
Y
Low power TTL
Fan out of 2 driving 74L
compatibility
or 1 driving 74LS
Y
5V±10V±15V parametric ratings
Y
Symmetrical output characteristics
Y
Maximum input leakage 1
m
A at 15V over full tempera-
ture range
Schematic Diagrams
CD4001BC/BM
of device shown
J
e
A
a
B
Logical ``1''
e
High
Logical ``0''
e
Low
TL/F/5939±2
*All inputs protected by standard
CMOS protection circuit.
TL/F/5939±1
CD4011BC/BM
of device shown
J
e
A
#
B
Logical ``1''
e
High
Logical ``0''
e
Low
TL/F/5939±6
*All inputs protected by standard
CMOS protection circuit.
TL/F/5939±5
C
1995 National Semiconductor Corporation
TL/F/5939
RRD-B30M105/Printed in U. S. A.
(/4
(/4
Absolute Maximum Ratings
(Notes 1 and 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Voltage at any Pin
Operating Conditions
Operating Range (V
DD
)
3 V
DC
to 15 V
DC
Operating Temperature Range
CD4001BM, CD4011BM
b
55
§
Cto
a
125
§
C
b
0.5V to V
DD
a
0.5V
CD4001BC, CD4011BC
b
40
§
Cto
a
85
§
C
Power Dissipation (P
D
)
Dual-In-Line
700 mW
Small Outline
500 mW
V
DD
Range
b
0.5 V
DC
to
a
18 V
DC
Storage Temperature (T
S
)
b
65
§
Cto
a
150
§
C
Lead Temperature (T
L
)
(Soldering, 10 seconds)
260
§
C
DC Electrical Characteristics
CD4001BM, CD4011BM (Note 2)
Symbol Parameter
Conditions
b
55
§
C
a
25
§
C
a
125
§
C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device V
DD
e
5V, V
IN
e
V
DD
or V
SS
0.25
0.004 0.25
7.5
m
A
Current
V
DD
e
10V, V
IN
e
V
DD
or V
SS
0.50
0.005 0.50
15
m
A
V
DD
e
15V, V
IN
e
V
DD
or V
SS
1.0
0.006 1.0
30
m
A
V
OL
Low Level
V
DD
e
5V
(
0.05
0
0.05
0.05 V
Output Voltage V
DD
e
10V
l
I
O
l
k
1
m
A
0.05
0
0.05
0.05 V
V
DD
e
15V
0.05
0
0.05
0.05 V
V
OH
High Level
V
DD
e
5V
(
4.95
4.95
5
4.95
V
Output Voltage V
DD
e
10V
l
I
O
l
k
1
m
A 9.95
9.95 10
9.95
V
V
DD
e
15V
14.95
14.95 15
14.95
V
V
IL
Low Level
V
DD
e
5V, V
O
e
4.5V
1.5
2
1.5
1.5 V
Input Voltage V
DD
e
10V, V
O
e
9.0V
3.0
4
3.0
3.0 V
V
DD
e
15V, V
O
e
13.5V
4.0
6
4.0
4.0 V
V
IH
High Level
V
DD
e
5V, V
O
e
0.5V
3.5
3.5
3
3.5
V
Input Voltage V
DD
e
10V, V
O
e
1.0V
7.0
7.0
6
7.0
V
V
DD
e
15V, V
O
e
1.5V
11.0
11.0
9
11.0
V
I
OL
Low Level Output V
DD
e
5V, V
O
e
0.4V
0.64
0.51 0.88
0.36
mA
Current
V
DD
e
10V, V
O
e
0.5V
1.6
1.3 2.25
0.9
mA
(Note 3)
V
DD
e
15V, V
O
e
1.5V
4.2
3.4
8.8
2.4
mA
I
OH
High Level Output V
DD
e
5V, V
O
e
4.6V
b
0.64
b
0.51
b
0.88
b
0.36
mA
Current
V
DD
e
10V, V
O
e
9.5V
b
1.6
b
1.3
b
2.25
b
0.9
mA
(Note 3)
V
DD
e
15V, V
O
e
13.5V
b
4.2
b
3.4
b
8.8
b
2.4
mA
I
IN
Input Current
V
DD
e
15V, V
IN
e
0V
b
0.10
b
10
b
5
b
0.10
b
1.0
m
A
V
DD
e
15V, V
IN
e
15V
0.10
10
b
5
0.10
1.0
m
A
Connection Diagrams
CD4001BC/CD4001BM
Dual-In-Line Package
CD4011BC/CD4011BM
Dual-In-Line Package
TL/F/5939±4
TL/F/5939±3
Top View
Order Number CD4001B or CD4011B
Top View
2
DC Electrical Characteristics
CD4001BC, CD4011BC (Note 2)
Symbol Parameter
Conditions
b
40
§
C
a
25
§
C
a
85
§
C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device V
DD
e
5V, V
IN
e
V
DD
or V
SS
1
0.004 1
7.5
m
A
Current
V
DD
e
10V, V
IN
e
V
DD
or V
SS
2
0.005 2
15
m
A
V
DD
e
15V, V
IN
e
V
DD
or V
SS
4
0.006 4
30
m
A
V
OL
Low Level
V
DD
e
5V
(
0.05
0
0.05
0.05 V
Output Voltage V
DD
e
10V
l
I
O
l
k
1
m
A
0.05
0
0.05
0.05 V
V
DD
e
15V
0.05
0
0.05
0.05 V
V
OH
High Level
V
DD
e
5V
(
4.95
4.95
5
4.95
V
Output Voltage V
DD
e
10V
l
I
O
l
k
1
m
A 9.95
9.95 10
9.95
V
V
DD
e
15V
14.95
14.95 15
14.95
V
V
IL
Low Level
V
DD
e
5V, V
O
e
4.5V
1.5
2
1.5
1.5 V
Input Voltage V
DD
e
10V, V
O
e
9.0V
3.0
4
3.0
3.0 V
V
DD
e
15V, V
O
e
13.5V
4.0
6
4.0
4.0 V
V
IH
High Level
V
DD
e
5V, V
O
e
0.5V
3.5
3.5
3
3.5
V
Input Voltage V
DD
e
10V, V
O
e
1.0V
7.0
7.0
6
7.0
V
V
DD
e
15V, V
O
e
1.5V
11.0
11.0
9
11.0
V
I
OL
Low Level Output V
DD
e
5V, V
O
e
0.4V
0.52
0.44 0.88
0.36
mA
Current
V
DD
e
10V, V
O
e
0.5V
1.3
1.1 2.25
0.9
mA
(Note 3)
V
DD
e
15V, V
O
e
1.5V
3.6
3.0
8.8
2.4
mA
I
OH
High Level Output V
DD
e
5V, V
O
e
4.6V
b
0.52
b
0.44
b
0.88
b
0.36
mA
Current
V
DD
e
10V, V
O
e
9.5V
b
1.3
b
1.1
b
2.25
b
0.9
mA
(Note 3)
V
DD
e
15V, V
O
e
13.5V
b
3.6
b
3.0
b
8.8
b
2.4
mA
I
IN
Input Current
V
DD
e
15V, V
IN
e
0V
b
0.30
b
10
b
5
b
0.30
b
1.0
m
A
V
DD
e
15V, V
IN
e
15V
0.30
10
b
5
0.30
1.0
m
A
AC Electrical Characteristics*
CD4001BC, CD4001BM
T
A
e
25
§
C, Input t
r
;t
f
e
20 ns. C
L
e
50 pF, R
L
e
200k. Typical temperature coefficient is 0.3%/
§
C.
Symbol
Parameter
Conditions
Typ
Max
Units
t
PHL
Propagation Delay Time,
V
DD
e
5V
120
250
ns
High-to-Low Level
V
DD
e
10V
50
100
ns
V
DD
e
15V
35
70
ns
t
PLH
Propagation Delay Time,
V
DD
e
5V
110
250
ns
Low-to-High Level
V
DD
e
10V
50
100
ns
V
DD
e
15V
35
70
ns
t
THL
,t
TLH
Transition Time
V
DD
e
5V
90
200
ns
V
DD
e
10V
50
100
ns
V
DD
e
15V
40
80
ns
C
IN
Average Input Capacitance
Any Input
5
7.5
pF
C
PD
Power Dissipation Capacity
Any Gate
14
pF
*AC Parameters are guaranteed by DC correlated testing.
Note 1: ``Absolute Maximum Ratings'' are those values beyond which the safety of the device cannot be guaranteed. Except for ``Operating Temperature Range''
they are not meant to imply that the devices should be operated at these limits. The table of ``Electrical Characteristics'' provides conditions for actual device
operation.
Note 2: All voltages measured with respect to V
SS
unless otherwise specified.
Note 3: IOL and IOH are tested one output at a time.
3
AC Electrical Characteristics*
CD4011BC, CD4011BM
T
A
e
25
§
C, Input t
r
;t
f
e
20 ns. C
L
e
50 pF, R
L
e
200k. Typical Temperature Coefficient is 0.3%/
§
C.
Symbol
Parameter
Conditions
Typ
Max
Units
t
PHL
Propagation Delay,
V
DD
e
5V
120
250
ns
High-to-Low Level
V
DD
e
10V
50
100
ns
V
DD
e
15V
35
70
ns
t
PLH
Propagation Delay,
V
DD
e
5V
85
250
ns
Low-to-High Level
V
DD
e
10V
40
100
ns
V
DD
e
15V
30
70
ns
t
THL
,t
TLH
Transition Time
V
DD
e
5V
90
200
ns
V
DD
e
10V
50
100
ns
V
DD
e
15V
40
80
ns
C
IN
Average Input Capacitance
Any Input
5
7.5
pF
C
PD
Power Dissipation Capacity
Any Gate
14
pF
*AC Parameters are guaranteed by DC correlated testing.
Typical Performance Characteristics
Typical
Transfer Characteristics
Typical
Transfer Characteristics
Typical
Transfer Characteristics
TL/F/5939±7
TL/F/5939±8
TL/F/5939±9
Typical
Transfer Characteristics
TL/F/5939±11
TL/F/5939±12
TL/F/5939±10
FIGURE 5
FIGURE 6
4
Typical Performance Characteristics
(Continued)
TL/F/5939±13
TL/F/5939±14
TL/F/5939±15
FIGURE 7
FIGURE 8
FIGURE 9
TL/F/5939±16
FIGURE 10
TL/F/5939±18
TL/F/5939±17
FIGURE 12
FIGURE 11
TL/F/5939±19
TL/F/5939±20
FIGURE 13
FIGURE 14
5
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