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irf9140
PD - 90426C
IRFF120
REPETITIVE AVALANCHE AND dv/dt RATED
JANTX2N6788
HEXFET
TRANSISTORS
JANTXV2N6788
THRU-HOLE (TO-205AF)
REF:MIL-PRF-19500/555
100V, N-CHANNEL
Product Summary
Part Number BVDSS R
DS(on)
I
D
IRFF120 100V 0.30Ω
6.0A
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
TO-39
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
Units
I
D
@ V
GS
= 10V, T
C
= 25°C
Continuous Drain Current
6.0
A
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
3.5
I
DM
Pulsed Drain Current
➀
24
P
D
@ T
C
= 25°C
Max. Power Dissipation
2 0
W
Linear Derating Factor
0.16
W/°C
V
GS
Gate-to-Source Voltage
±20
V
E
AS
Single Pulse Avalanche Energy
➁
76
mJ
I
AR
Avalanche Current
➀
—
A
E
AR
Repetitive Avalanche Energy
➀
—
mJ
dv/dt
Peak Diode Recovery dv/dt
➂
5.5
V/ns
T
J
Operating Junction
-55 to 150
T
STG
Storage Temperature Range
Lead Temperature
o
C
300 (0.063 in. (1.6mm) from case for 10s)
Weight
0.98(typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01
Features:
IRFF120
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
V
V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/∆
T
J
Temperature Coefficient of Breakdown
—
0.10
—
V/°C
Reference to 25°C, I
D
= 1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State
—
— 0.30 V
GS
= 10V, I
D
= 3.5A
Resistance
—
— 0.345
V
GS
=10V, I
D
= 6.0A
V
GS(th)
Gate Threshold Voltage
2.0
—
4.0 V V
DS
= V
GS
, I
D
= 250
A
g
fs
Forward Transconductance
1.5
—
— S V
DS
> 15V, I
DS
= 3.5A
I
DSS
Zero Gate Voltage Drain Current
—
—
2 5
V
DS
= 80V, V
GS
=0V
—
—
250
µA
V
DS
= 80V
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward
—
—
100
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse
—
—
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
7.7
—
1 7
V
GS
=10V, ID = 6.0A
Q
gs
Gate-to-Source Charge
0.7
—
4.0
nC
V
DS
= 50V
Q
gd
Gate-to-Drain (‘Miller’) Charge
2.0
—
7.7
t
d(on)
Turn-On Delay Time
—
—
4 0
V
DD
= 50V, I
D
= 6.0A,
t
r
Rise Time
—
—
7 0
R
G
= 7.5
ns
t
d(off)
Turn-Off Delay Time
—
—
4 0
t
f
Fall Time
—
—
7 0
L
S +
L
D
Total Inductance
—
7.0
—
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
C
iss
Input Capacitance
—
350
V
GS
= 0V, V
DS
= 25V
C
oss
Output Capacitance
—
150
—
pF
f = 1.0MHz
C
rss
Reverse Transfer Capacitance
—
2 4
—
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
S
Continuous Source Current (Body Diode)
—
—
6.0
A
I
SM
Pulse Source Current (Body Diode)
➀
—— 4
V
SD
Diode Forward Voltage
—
—
1.8
V
T
j
= 25°C, I
S
=6.0A, V
GS
= 0V
➃
t
rr
Reverse Recovery Time
—
—
240
nS
Tj = 25°C, I
F
= 6.0A, di/dt ≤
100A/µ
s
Q
RR
Reverse Recovery Charge
—
—
2.0
µC
V
DD
≤
50V
➃
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
Junction-to-Case
— — 6.25
°C/W
R
thJA
Junction-to-Ambient
— — 175
Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRFF120
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFF120
13 a& b
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
13 a& b
IRFF120
V
DS
R
D
V
GS
D.U.T.
R
G
+
-
V
DD
10V
Pulse Width
≤
µs
Duty Factor
≤
Fig 10a.
Switching Time Test Circuit
V
DS
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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