2n6788.pdf

PD - 90426C

IRFF120

REPETITIVE AVALANCHE AND dv/dt RATED

JANTX2N6788

HEXFET

TRANSISTORS

JANTXV2N6788

THRU-HOLE (TO-205AF)

REF:MIL-PRF-19500/555

100V, N-CHANNEL

Product Summary

Part Number BVDSS R DS(on) I D

IRFF120 100V 0.30Ω

6.0A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

TO-39

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Absolute Maximum Ratings

Parameter

Units

I D @ V GS = 10V, T C = 25°C

Continuous Drain Current

6.0

I D @ V GS = 10V, T C = 100°C Continuous Drain Current

3.5

I DM

Pulsed Drain Current ➀

P D @ T C = 25°C

Max. Power Dissipation

2 0

Linear Derating Factor

0.16

W/°C

V GS

Gate-to-Source Voltage

±20

E AS

Single Pulse Avalanche Energy ➁

I AR

Avalanche Current ➀

—

E AR

Repetitive Avalanche Energy ➀

—

dv/dt

Peak Diode Recovery dv/dt ➂

5.5

V/ns

T J

Operating Junction

-55 to 150

T STG

Storage Temperature Range

Lead Temperature

o C

300 (0.063 in. (1.6mm) from case for 10s)

Weight

0.98(typical)

For footnotes refer to the last page

www.irf.com

01/22/01

Features:

IRFF120

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

BV DSS

Drain-to-Source Breakdown Voltage

100

—

V GS = 0V, I D = 1.0mA

BV DSS /∆

T J Temperature Coefficient of Breakdown

—

0.10

—

V/°C

Reference to 25°C, I D = 1.0mA

Voltage

R DS(on)

Static Drain-to-Source On-State

—

— 0.30 V GS = 10V, I D = 3.5A

Resistance

—

— 0.345

V GS =10V, I D = 6.0A

V GS(th)

Gate Threshold Voltage

2.0

—

4.0 V V DS = V GS , I D = 250

g fs

Forward Transconductance

1.5

—

— S V DS > 15V, I DS = 3.5A

I DSS

Zero Gate Voltage Drain Current

—

2 5

V DS = 80V, V GS =0V

—

250

µA

V DS = 80V

V GS = 0V, T J = 125°C

I GSS

Gate-to-Source Leakage Forward

—

100

V GS = 20V

I GSS

Gate-to-Source Leakage Reverse

—

-100

V GS = -20V

Q g

Total Gate Charge

7.7

—

1 7

V GS =10V, ID = 6.0A

Q gs

Gate-to-Source Charge

0.7

—

4.0

V DS = 50V

Q gd

Gate-to-Drain (‘Miller’) Charge

2.0

—

7.7

t d(on)

Turn-On Delay Time

—

4 0

V DD = 50V, I D = 6.0A,

t r

Rise Time

—

7 0

R G = 7.5

t d(off)

Turn-Off Delay Time

—

4 0

t f

Fall Time

—

7 0

L S + L D

Total Inductance

—

7.0

—

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

C iss

Input Capacitance

—

350

V GS = 0V, V DS = 25V

C oss

Output Capacitance

—

150

—

f = 1.0MHz

C rss

Reverse Transfer Capacitance

—

2 4

—

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

I S

Continuous Source Current (Body Diode)

—

6.0

I SM

Pulse Source Current (Body Diode) ➀

—— 4

V SD

Diode Forward Voltage

—

1.8

T j = 25°C, I S =6.0A, V GS = 0V ➃

t rr

Reverse Recovery Time

—

240

Tj = 25°C, I F = 6.0A, di/dt ≤

100A/µ

Q RR Reverse Recovery Charge

—

2.0

µC

V DD ≤

50V ➃

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

R thJC

Junction-to-Case

— — 6.25

°C/W

R thJA

Junction-to-Ambient

— — 175 Typical socket mount.

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRFF120

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFF120

13 a& b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

www.irf.com

13 a& b

IRFF120

V DS

R D

V GS

D.U.T.

R G

- V DD

10V

Pulse Width ≤

µs

Duty Factor ≤

Fig 10a. Switching Time Test Circuit

V DS

90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

10%

V GS

t d(on) t r

t d(off) t f

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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