2n3773-d.pdf

ON Semiconductor

NPN

Complementary Silicon Power

Transistors

2N3773

PNP

2N6609

power transistors

designed for high power audio, disk head positioners and other linear

applications. These devices can also be used in power switching

circuits such as relay or solenoid drivers, dc to dc converters or

inverters.

•

The 2N3773 and 2N6609 are PowerBase

*ON Semiconductor Preferred Device

High Safe Operating Area (100% Tested) 150 W @ 100 V

16 AMPERE

COMPLEMENTARY

POWER TRANSISTORS

140 VOLTS

150 WATTS

•

Completely Characterized for Linear Operation

•

High DC Current Gain and Low Saturation Voltage

h FE = 15 (Min) @ 8 A, 4 V

V CE(sat) = 1.4 V (Max) @ I C = 8 A, I B = 0.8 A

•

For Low Distortion Complementary Designs

CASE 1–07

TO–204AA

(TO–3)

*MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector Emitter Voltage

V CEO

140

Vdc

Collector–Emitter Voltage

V CEX

160

Vdc

Collector–Base Voltage

V CBO

160

Vdc

Emitter–Base Voltage

V EBO ÎÎÎÎÎÎÎÎ

7 ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1)

I C ÎÎÎÎÎÎÎÎ

Adc

Base Current — Continuous

— Peak (1)

I B

Adc

Total Power Dissipation @ T C = 25

P D

150

0.855

Watts

Derate above 25

Operating and Storage Junction

Temperature Range

T J , T stg

–65 to +200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R q JC

1.17

C/W

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

W Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 9

Publication Order Number:

2N3773/D

2N3773 2N6609

ELECTRICAL CHARACTERISTICS (T C = 25C unless otherwise noted)

Characteristic

Symbol ÎÎÎ

Min ÎÎÎÎ

Max ÎÎÎ

Unit

OFF CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Collector–Emitter Breakdown Voltage

(I C = 0.2 Adc, I B = 0)

V CEO(sus)

140

—

Vdc

*Collector–Emitter Sustaining Voltage

(I C = 0.1 Adc, V BE(off) = 1.5 Vdc, R BE = 100 Ohms)

V CEX(sus)

160 ÎÎÎÎ

— ÎÎÎ

Vdc

Collector–Emitter Sustaining Voltage

(I C = 0.2 Adc, R BE = 100 Ohms)

V CER(sus) ÎÎÎ

150 ÎÎÎÎ

— ÎÎÎ

Vdc

*Collector Cutoff Current

(V CE = 120 Vdc, I B = 0)

I CEO ÎÎÎ

— ÎÎÎÎ

10 ÎÎÎ

mAdc

*Collector Cutoff Current

(V CE = 140 Vdc, V BE(off) = 1.5 Vdc)

(V CE = 140 Vdc, V BE(off) = 1.5 Vdc, T C = 150

I CEX

mAdc

—

Collector Cutoff Current

(V CB = 140 Vdc, I E = 0)

I CBO

— ÎÎÎÎ

2 ÎÎÎ

mAdc

*Emitter Cutoff Current

(V BE = 7 Vdc, I C = 0)

I EBO ÎÎÎ

— ÎÎÎÎ

5 ÎÎÎ

mAdc

ON CHARACTERISTICS (2)

DC Current Gain

*(I C = 8 Adc, V CE = 4 Vdc)

(I C = 16 Adc, V CE = 4 Vdc)

h FE ÎÎÎ

—

Collector–Emitter Saturation Voltage

*(I C = 8 Adc, I B = 800 mAdc)

(I C = 16 Adc, I B = 3.2 Adc)

V CE(sat) ÎÎÎ

Vdc

—

1.4

*Base–Emitter On Voltage

(I C = 8 Adc, V CE = 4 Vdc)

V BE(on) ÎÎÎ

— ÎÎÎÎ

2.2 ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Magnitude of Common–Emitter

Small–Signal, Short–Circuit, Forward Current Transfer Ratio

(I C = 1 A, f = 50 kHz)

|h fe |

—

*Small–Signal Current Gain

(I C = 1 Adc, V CE = 4 Vdc, f = 1 kHz)

h fe

40 ÎÎÎÎ

— ÎÎÎ

—

SECOND BREAKDOWN CHARACTERISTICS

Second Breakdown Collector Current with Base Forward Biased

t = 1 s (non–repetitive), V CE = 100 V, See Figure 12

I S/b ÎÎÎ

1.5 ÎÎÎÎ

— ÎÎÎ

Adc

(2) Pulse Test: Pulse Width = 300 m s, Duty Cycle 2%.

*Indicates JEDEC Registered Data.

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2N3773 2N6609

NPN

PNP

300

150 ° C

200

150 ° C

25 ° C

100

25 ° C

-55 ° C

100

-55 ° C

V CE = 4 V

7.0

5.0

0.2

0.3

0.5 0.7 1.0

2.0 3.0

5.0

7.0 10

5.0

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0

7.0 10

I C , COLLECTOR CURRENT (AMPS)

Figure 6. DC Current Gain

Figure 7. DC Current Gain

2.0

1.6

I C = 4 A

1.6

I C = 4 A

I C = 16 A

1.2

I C = 8 A

1.2

I C = 8 A

I C = 16 A

0.8

0.4

T C = 25 ° C

0.05

0.07 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

0.05 0.07 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0 5.0

I B , BASE CURRENT (AMPS)

Figure 8. Collector Saturation Region

Figure 9. Collector Saturation Region

2.0

I C /I B = 10

1.6

1.2

V BE(sat)

0.8

25 ° C

0.8

25 ° C

150 ° C

0.4

150 ° C

0.4

25 ° C

V CE(sat)

25 ° C

V CE(sat)

0.2

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0

I C , COLLECTOR CURRENT (AMPS)

Figure 10. “On” Voltage

Figure 11. “On” Voltage

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2N3773 2N6609

10 m s

40 m s

100 m s

5.0

3.0

2.0

1.0

0.5

200 m s

1.0 ms

100 ms

500 ms

0.3

0.2

BONDING WIRE LIMIT

THERMAL LIMIT

@ T C = 25 ° C, SINGLE PULSE

SECOND BREAKDOWN LIMIT

0.1

0.05

0.03

3.0

5.0 7.0 10

100

200

300

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 12. Forward Bias Safe Operating Area

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I C – V CE

limits of the transistor that must be observed for reliable

operation: i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 7 is based on T J(pk) = 200

C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

C; T C is

variable depending on conditions. Second breakdown pulse

100

THERMAL

DERATING

120

160

200

T C , CASE TEMPERATURE ( ° C)

Figure 13. Power Derating

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limits are valid for duty cycles to 10% provided T J(pk)

< 200

2N3773 2N6609

PACKAGE DIMENSIONS

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

–T–

SEATING

PLANE

2 PL

INCHES

MILLIMETERS

0.13 (0.005)

DIM MIN MAX MIN MAX

A 1.550 REF

39.37 REF

–Y–

B ---

1.050

---

26.67

C 0.250

0.335

6.35

8.51

D 0.038

0.043

0.97

1.09

E 0.055

0.070

1.40

1.77

G 0.430 BSC

10.92 BSC

H 0.215 BSC

5.46 BSC

K 0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

–Q–

N ---

0.830

---

21.08

Q 0.151

0.165

3.84

4.19

0.13 (0.005)

U 1.187 BSC

30.15 BSC

V 0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

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