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ON Semiconductor
NPN
*
Complementary Silicon Power
Transistors
2N3773
PNP
2N6609
power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, dc to dc converters or
inverters.
•
The 2N3773 and 2N6609 are PowerBase
*ON Semiconductor Preferred Device
High Safe Operating Area (100% Tested) 150 W @ 100 V
16 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
140 VOLTS
150 WATTS
•
Completely Characterized for Linear Operation
•
High DC Current Gain and Low Saturation Voltage
h
FE
= 15 (Min) @ 8 A, 4 V
V
CE(sat)
= 1.4 V (Max) @ I
C
= 8 A, I
B
= 0.8 A
•
For Low Distortion Complementary Designs
CASE 1–07
TO–204AA
(TO–3)
*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
V
CEO
140
Vdc
Collector–Emitter Voltage
V
CEX
160
Vdc
Collector–Base Voltage
V
CBO
160
Vdc
Emitter–Base Voltage
V
EBO
ÎÎÎÎÎÎÎÎ
7
ÎÎÎÎ
Vdc
Collector Current — Continuous
— Peak (1)
I
C
ÎÎÎÎÎÎÎÎ
16
30
Adc
Base Current — Continuous
— Peak (1)
I
B
4
15
Adc
Total Power Dissipation @ T
C
= 25
C
P
D
150
0.855
Watts
W/
Derate above 25
C
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
q
JC
1.17
C/W
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
W
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N3773/D
2N3773 2N6609
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
ÎÎÎ
Min
ÎÎÎÎ
Max
ÎÎÎ
Unit
OFF CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Collector–Emitter Breakdown Voltage
(I
C
= 0.2 Adc, I
B
= 0)
V
CEO(sus)
140
—
Vdc
*Collector–Emitter Sustaining Voltage
(I
C
= 0.1 Adc, V
BE(off)
= 1.5 Vdc, R
BE
= 100 Ohms)
V
CEX(sus)
160
ÎÎÎÎ
—
ÎÎÎ
Vdc
Collector–Emitter Sustaining Voltage
(I
C
= 0.2 Adc, R
BE
= 100 Ohms)
V
CER(sus)
ÎÎÎ
150
ÎÎÎÎ
—
ÎÎÎ
Vdc
*Collector Cutoff Current
(V
CE
= 120 Vdc, I
B
= 0)
I
CEO
ÎÎÎ
—
ÎÎÎÎ
10
ÎÎÎ
mAdc
*Collector Cutoff Current
(V
CE
= 140 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 140 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150
I
CEX
mAdc
C)
—
—
2
10
Collector Cutoff Current
(V
CB
= 140 Vdc, I
E
= 0)
I
CBO
—
ÎÎÎÎ
2
ÎÎÎ
mAdc
*Emitter Cutoff Current
(V
BE
= 7 Vdc, I
C
= 0)
I
EBO
ÎÎÎ
—
ÎÎÎÎ
5
ÎÎÎ
mAdc
ON CHARACTERISTICS (2)
DC Current Gain
*(I
C
= 8 Adc, V
CE
= 4 Vdc)
(I
C
= 16 Adc, V
CE
= 4 Vdc)
h
FE
ÎÎÎ
—
15
5
60
—
Collector–Emitter Saturation Voltage
*(I
C
= 8 Adc, I
B
= 800 mAdc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
ÎÎÎ
Vdc
—
—
1.4
4
*Base–Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 4 Vdc)
V
BE(on)
ÎÎÎ
—
ÎÎÎÎ
2.2
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Magnitude of Common–Emitter
Small–Signal, Short–Circuit, Forward Current Transfer Ratio
(I
C
= 1 A, f = 50 kHz)
|h
fe
|
4
—
—
*Small–Signal Current Gain
(I
C
= 1 Adc, V
CE
= 4 Vdc, f = 1 kHz)
h
fe
40
ÎÎÎÎ
—
ÎÎÎ
—
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (non–repetitive), V
CE
= 100 V, See Figure 12
I
S/b
ÎÎÎ
1.5
ÎÎÎÎ
—
ÎÎÎ
Adc
(2) Pulse Test: Pulse Width = 300
m
s, Duty Cycle
2%.
*Indicates JEDEC Registered Data.
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2
2N3773 2N6609
NPN
PNP
300
300
150
°
C
200
200
150
°
C
25
°
C
100
70
25
°
C
-55
°
C
100
70
-55
°
C
50
50
30
20
V
CE
= 4 V
30
20
V
CE
= 4 V
10
10
7.0
7.0
5.0
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0
7.0 10
20
5.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
7.0 10
20
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain
Figure 7. DC Current Gain
2.0
2.0
1.6
I
C
= 4 A
1.6
I
C
= 4 A
I
C
= 16 A
1.2
I
C
= 8 A
1.2
I
C
= 8 A
I
C
= 16 A
0.8
0.8
0.4
0.4
T
C
= 25
°
C
T
C
= 25
°
C
0
0
0.05
0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0
I
B
, BASE CURRENT (AMPS)
I
B
, BASE CURRENT (AMPS)
Figure 8. Collector Saturation Region
Figure 9. Collector Saturation Region
2.0
2.0
I
C
/I
B
= 10
I
C
/I
B
= 10
1.6
1.6
1.2
1.2
V
BE(sat)
V
BE(sat)
0.8
25
°
C
0.8
25
°
C
150
°
C
150
°
C
150
°
C
0.4
150
°
C
0.4
25
°
C
V
CE(sat)
25
°
C
0
V
CE(sat)
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltage
Figure 11. “On” Voltage
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2N3773 2N6609
20
10
10
m
s
40
m
s
100
m
s
5.0
3.0
2.0
1.0
0.5
dc
200
m
s
1.0 ms
100 ms
500 ms
0.3
0.2
BONDING WIRE LIMIT
THERMAL LIMIT
@ T
C
= 25
°
C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
0.1
0.05
0.03
3.0
5.0 7.0 10
20
30
50
70
100
200
300
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on T
J(pk)
= 200
C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
C; T
C
is
variable depending on conditions. Second breakdown pulse
100
80
60
40
THERMAL
DERATING
20
0
0
40
80
120
160
200
T
C
, CASE TEMPERATURE (
°
C)
Figure 13. Power Derating
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4
30
limits are valid for duty cycles to 10% provided T
J(pk)
< 200
2N3773 2N6609
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
E
–T–
SEATING
PLANE
D
2 PL
K
INCHES
MILLIMETERS
0.13 (0.005)
T
Q
Y
M
M
M
DIM MIN MAX MIN MAX
U
A 1.550 REF
39.37 REF
–Y–
B ---
1.050
---
26.67
L
V
C 0.250
0.335
6.35
8.51
D 0.038
0.043
0.97
1.09
2
E 0.055
0.070
1.40
1.77
G
B
G 0.430 BSC
10.92 BSC
H
H 0.215 BSC
5.46 BSC
1
K 0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
–Q–
N ---
0.830
---
21.08
Q 0.151
0.165
3.84
4.19
0.13 (0.005)
M
T
Y
M
U 1.187 BSC
30.15 BSC
V 0.131
0.188
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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