BUT11AX_1.pdf

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AX
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in
converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
V CESM
Collector-emitter voltage peak value
V BE = 0 V
-
1000
V
V CEO
Collector-emitter voltage (open base)
-
450
V
I C
Collector current (DC)
-
5
A
I CM
Collector current peak value
-
10
A
P tot
Total power dissipation
T hs
£
25 ˚C
-
32
W
V CEsat
Collector-emitter saturation voltage
-
1.5
V
I Csat
Collector saturation current
2.5
-
A
t f
Fall time
150
-
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
c
case
1
base
2
collector
b
3
emitter
case isolated
12 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V CESM
Collector-emitter voltage peak value
V BE = 0 V
-
1000
V
V CEO
Collector-emitter voltage (open base)
-
450
V
I C
Collector current (DC)
-
5
A
I CM
Collector current peak value
-
10
A
I B
Base current (DC)
-
2
A
I BM
Base current peak value
-
4
A
P tot
Total power dissipation
T hs
£
25 ˚C
-
32
W
T stg
Storage temperature
-65
150
˚C
T j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
R th j-hs
Junction to heatsink
with heatsink compound
-
3.95
K/W
R th j-a
Junction to ambient
in free air
55
-
K/W
November 1995
1
Rev 1.100
22889023.013.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CES
Collector cut-off current 1
V BE = 0 V; V CE = V CESMmax
-
-
1.0
mA
I CES
V BE = 0 V; V CE = V CESMmax ;
-
-
2.0
mA
T j = 125 ˚C
I EBO
Emitter cut-off current
V EB = 9 V; I C = 0 A
-
-
10
mA
V CEOsust
Collector-emitter sustaining voltage I B = 0 A; I C = 100 mA;
450
-
-
V
L = 25 mH
V CEsat
Collector-emitter saturation voltages I C = 2.5 A; I B = 0.5 A
-
-
1.5
V
V BEsat
Base-emitter saturation voltage
I C = 2.5 A; I B = 0.5 A
-
-
1.3
V
h FE
DC current gain
I C = 5 mA; V CE = 5 V
10
18
35
h FE
I C = 500 mA; V CE = 5 V
10
20
35
DYNAMIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
t on
Switching times (resistive load)
I Con = 2.5 A; I Bon = -I Boff = 0.5 A
0.6
-
m
s
t s
Turn-off storage time
3.5
-
m
s
t f
Turn-off fall time
0.6
-
m
s
Switching times (inductive load)
I Con = 2.5 A; I Bon = 0.5 A; L B = 1
m
H;
-V BB = 5 V
t s
Turn-off storage time
1.5
-
m
s
t f
Turn-off fall time
150
-
ns
Switching times (inductive load)
I Con = 2.5 A; I Bon = 0.5 A; L B = 1
m
H;
-V BB = 5 V; T j = 100 ˚C
t s
Turn-off storage time
1.8
-
m
s
t f
Turn-off fall time
170
-
ns
1 Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.100
Turn-on time
22889023.014.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AX
ICon
90 %
90 %
+ 50v
100-200R
IC
10 %
Horizontal
ts
ton
tf
toff
Oscilloscope
IBon
IB
Vertical
10 %
300R
1R
tr 30ns
6V
30-60 Hz
-IBoff
Fig.1. Test circuit for V CEOsust .
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
250
LC
200
IBon
LB
100
T.U.T.
-VBB
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for V CEOsust .
Fig.5. Test circuit inductive load.
V CC = 300 V; -V BE = 5 V; L C = 200 uH; L B = 1 uH
VCC
ICon
90 %
IC
R
L
VIM
R
10 %
0
T.U.T.
ts
tf
t
toff
tp
IB
IBon
T
t
-IBoff
= t p / T = 0.01.
R B and R L calculated from I Con and I Bon requirements.
m
s;
d
Fig.6. Switching times waveforms with inductive load.
November 1995
3
Rev 1.100
B
Fig.3. Test circuit resistive load. V IM = -6 to +8 V
V CC = 250 V; t p = 20
22889023.015.png 22889023.016.png 22889023.001.png 22889023.002.png 22889023.003.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AX
120
110
100
90
80
70
60
50
40
30
20
10
0
%
Normalised Derating
IC / A
with heatsink compound
100
ICM max
= 0.01
10
P tot
IC max
tp =
II
10 us
(1)
100 us
1
0
20
40
60
80
100 120 140
Ths / C
1 ms
Fig.7. Normalised power derating and second
breakdown curves.
10 ms
I
0.1
(2)
500 ms
DC
6
IC / A
BUT11AX
III
5
0.01
1
10
100
1000
4
V / V
3
Fig.10. Forward bias safe operating area. T hs
£
25 ˚C
2
(1)
P tot max and P tot peak max lines.
I
Region of permissible DC operation.
1
II
Extension for repetitive pulse operation.
III
Extension during turn-on in single
transistor converters provided that
R BE
0
0
400
VCE / V
800
1200
s.
NB: Mounted with heatsink compound and
30
£
100
W
and t p
£
0.6
m
Fig.8. Reverse bias safe operating area. T j
£
T j max
5 newton force on the centre of the
envelope.
±
100
h
FE
BUT11AX
5V
10
1V
1
0.01
0.1
1
10
100
IC / A
Fig.9. Typical DC current gain.
h FE = f(I C ); parameter V CE
November 1995
4
Rev 1.100
CE
(2)
Second breakdown limits.
22889023.004.png 22889023.005.png 22889023.006.png 22889023.007.png 22889023.008.png 22889023.009.png 22889023.010.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AX
Fig.11. Typical base-emitter and collector-emitter saturation voltages.
V BEsat = f(I C ); V CEsat = f(I C ); I C /I B = 5
Fig.12. Collector-emitter saturation voltage. Solid lines = typ values,
dotted lines = max values. V CEsat = f(I B ); parameter I C
November 1995
5
Rev 1.100
22889023.011.png 22889023.012.png

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