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11068850 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BST50; BST51; BST52
NPN Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 16
11068850.013.png 11068850.014.png 11068850.015.png
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
FEATURES
PINNING
·
High current (max. 0.5 A)
PIN
DESCRIPTION
·
Low voltage (max. 80 V)
1
emitter
·
Integrated diode and resistor.
2
collector
3
base
APPLICATIONS
·
Industrial switching applications such as:
– print hammer
– solenoid
– relay and lamp driving.
handbook, halfpag e
2
DESCRIPTION
3
NPN Darlington transistor in a SOT89 plastic package.
PNP complements: BST60, BST61 and BST62.
1
2
3
1
MARKING
Bottom view
MAM327
TYPE NUMBER
MARKING CODE
BST50
AS1
BST51
AS2
Fig.1 Simplified outline (SOT89) and symbol.
BST52
AS3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BST50
-
-
60
V
BST51
-
-
80
V
BST52
-
-
90
V
V CES
collector-emitter voltage
V BE =0
BST50
-
-
45
V
BST51
-
-
60
V
BST52
-
-
80
V
I C
collector current (DC)
-
-
0.5
A
P tot
total power dissipation
T amb £ 25 ° C
-
-
1.35
W
h FE
DC current gain
I C = 500 mA; V CE = 10 V
2000
-
-
f T
transition frequency
I C = 500 mA; V CE = 5 V; f = 100 MHz
-
200
-
MHz
1997 Apr 16
2
11068850.016.png 11068850.001.png 11068850.002.png
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BST50
-
60
V
BST51
-
80
V
BST52
-
90
V
V CES
collector-emitter voltage
V BE =0
BST50
-
45
V
BST51
-
60
V
BST52
-
80
V
V EBO
emitter-base voltage
open collector
-
5
V
I C
collector current (DC)
-
0.5
A
I CM
peak collector current
-
1.5
A
I B
base current (DC)
-
100
mA
P tot
total power dissipation
T amb £
25
°
C; note 1
-
1.35
W
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
° C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm 2 .
For other mounting conditions, see “Thermal considerations for the SOT89 in the General part of handbook SC04”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
92
K/W
R th j-s
thermal resistance from junction to soldering point
11
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm 2 .
For other mounting conditions, see “Thermal considerations for the SOT89 in the General part of handbook SC04”.
1997 Apr 16
3
11068850.003.png
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CES
collector cut-off current
BST50
V BE = 0; V CE =45V
-
-
50
nA
BST51
V BE = 0; V CE =60V
-
-
50
nA
BST52
V BE = 0; V CE =80V
-
-
50
nA
I EBO
emitter cut-off current
I C = 0; V EB =4V
-
-
50
nA
h FE
DC current gain
V CE = 10 V; note 1; see Fig.2
I C = 150 mA
1000
-
-
I= 500 mA
2000
-
-
V CEsat
collector-emitter saturation
voltage
I C = 500 mA; I B = 0.5 mA
-
-
1.3
V
I C = 500 mA; I B = 0.5 mA; T j = 150 ° C
-
-
1.3
V
V BEsat
base-emitter saturation voltage I C = 500 mA; I B = 0.5 mA
-
-
1.9
V
f T
transition frequency
I C = 500 mA; V CE = 5 V; f = 100 MHz
-
200
-
MHz
Switching times (between 10% and 90% levels); see Fig.3
t on
turn-on time
I Con = 500 mA; I Bon = 0.5 mA;
I Boff =
-
400
-
ns
-
0.5 mA
t off
turn-off time
-
1500
-
ns
Note
1. Pulse test: t p £ 300 m s; d£ 0.02.
1997 Apr 16
4
11068850.004.png
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
MGD838
5000
handbook, full pagewidth
h FE
4000
3000
2000
1000
0
10 - 1
1
10
10 2
I C (mA)
10 3
V CE =10V.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
V BB
V CC
R B
R C
oscilloscope
(probe)
450
V o
(probe)
450
oscillo scope
W
W
V i
R2
DUT
R1
MLB826
3 ns.
R1 = 56 W ; R2 = 10 k W ; R B =10k W ; R C =18 W .
V BB =
m
s; t p =6
m
s; t r =t f £
1.8 V; V CC = 10.7 V.
Oscilloscope: input impedance Z i =50
W
.
Fig.3 Test circuit for switching times.
1997 Apr 16
5
V i = 10 V; T = 200
-
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