BD131.PDF

(67 KB) Pobierz
11067935 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD131
NPN power transistor
Product specication
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Mar 04
11067935.018.png 11067935.019.png 11067935.020.png 11067935.021.png 11067935.001.png 11067935.002.png
Philips Semiconductors
Product specication
NPN power transistor
BD131
FEATURES
PINNING
·
High current (max. 3 A)
PIN
DESCRIPTION
·
Low voltage (max. 45 V).
1
emitter
2
collector, connected to metal part of
mounting surface
APPLICATIONS
·
General purpose power applications.
3
base
DESCRIPTION
handbook, halfpage
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complement: BD132.
2
3
1
123 Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
70
V
V CEO
collector-emitter voltage
open base
-
45
V
I CM
peak collector current
-
6
A
P tot
total power dissipation
T mb £
60
°
C
-
15
W
h FE
DC current gain
I C = 0.5 A; V CE =12V
40
-
f T
transition frequency
I C = 0.25 A; V CE = 5 V; f = 100 MHz 60
-
MHz
1997 Mar 04
2
11067935.003.png 11067935.004.png
Philips Semiconductors
Product specication
NPN power transistor
BD131
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
70
V
V CEO
collector-emitter voltage
open base
-
45
V
V EBO
emitter-base voltage
open collector
-
6
V
I C
collector current (DC)
-
3
A
I CM
peak collector current
-
6
A
I BM
peak base current
-
0.5
A
P tot
total power dissipation
T mb £ 60 ° C
-
15
W
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
100
K/W
R th j-mb
thermal resistance from junction to mounting base
6
K/W
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
1997 Mar 04
3
11067935.005.png
Philips Semiconductors
Product specication
NPN power transistor
BD131
CHARACTERISTICS
T j =25 ° C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I CBO
collector cut-off current
I E = 0; V CB =50V
-
50
mA
I E = 0; V CB =50V; T j = 150 ° C
-
10
m A
I EBO
emitter cut-off current
I C = 0; V EB =5V
-
50
nA
h FE
DC current gain
I C = 0.5 A; V CE = 12 V; see Fig.2
40
-
I C = 2 A; V CE = 1 V; see Fig.2
20
-
V CEsat
collector-emitter saturation voltage
I C = 0.5 A; I B =50mA
-
300
mV
I C = 2 A; I B = 200 mA
-
700
mV
V BEsat
base-emitter saturation voltage
I C = 0.5 A; I B =50mA
-
1.2
V
I C = 2 A; I B = 200 mA
-
1.5
V
f T
transition frequency
I C = 0.25 A; V CE =5V;
f = 100 MHz; T amb =25
60
-
MHz
°
C
MGD840
80
handbook, full pagewidth
h FE
60
40
20
10 - 1
10 2
10 3
10 4
1
10
I C (mA)
V CE =1V.
Fig.2 DC current gain; typical values.
1997 Mar 04
4
0
11067935.006.png 11067935.007.png 11067935.008.png 11067935.009.png
Philips Semiconductors
Product specication
NPN power transistor
BD131
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P 1
P
D
L 1
L
1
2
3
w M
c
e 1
Q
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b p
c
D
E
e
e 1
L
L 1 (1)
max
Q
P
P 1
w
mm
2.7
2.3
0.88
0.65
0.60
0.45
11.1
10.5
7.8
7.2
4.58
2.29
16.5
15.3
2.54
1.5
0.9
3.2
3.0
3.9
3.6
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT32
TO-126
97-03-04
1997 Mar 04
5
11067935.010.png 11067935.011.png 11067935.012.png 11067935.013.png 11067935.014.png 11067935.015.png 11067935.016.png 11067935.017.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin