BC559_4.pdf

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PNP general purpose transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC559
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jun 03
1999 May 28
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Philips Semiconductors
Product specification
PNP general purpose transistor
BC559
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
Low voltage (max. 30 V).
1
emitter
2
base
APPLICATIONS
3
collector
·
General purpose switching and amplification.
DESCRIPTION
handbook, halfpag 1
2
3
3
PNP transistor in a TO-92 (SOT54) plastic package.
NPN complement: BC549.
2
MAM281
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
- 30
V
V CEO
collector-emitter voltage
open base
-
-
30
V
V EBO
emitter-base voltage
open collector
-
-
5
V
I C
collector current (DC)
-
-
100
mA
I CM
peak collector current
-
- 200
mA
I BM
peak base current
-
-
200
mA
P tot
total power dissipation
T amb £
25
°
C
-
500
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
° C
T amb
operating ambient temperature
-
65
+150
°
C
1999 May 28
2
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Philips Semiconductors
Product specification
PNP general purpose transistor
BC559
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
250
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T j =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =
-
30 V
-
-
1
-
15
nA
I E = 0; V CB =
-
30 V; T j = 150
°
C
-
-
-
4
m
A
I EBO
emitter cut-off current
I C = 0; V EB =
-
5V
-
-
-
100 nA
h FE
DC current gain; BC559C
I C = - 2 mA; V CE = - 5 V; see Fig.2
420
-
800
V CEsat
collector-emitter saturation
voltage
I C =
-
10 mA; I B =
-
0.5 mA
-
-
60
-
300 mV
I C =
-
100 mA; I B =
-
5mA
-
-
180
-
650 mV
V BEsat
base-emitter saturation voltage I C =
-
10 mA; I B =
-
0.5 mA; note 1
-
-
750
-
mV
I C = - 100 mA; I B = - 5 mA; note 1
-
- 930
-
mV
V BE
base-emitter voltage
I C =
-
2 mA; V CE =
-
5 V; note 2
-
600
-
650
-
750 mV
I C =
-
10 mA; V CE =
-
5 V; note 2
-
-
-
820 mV
C c
collector capacitance
I E =i e = 0; V CB =
-
10 V; f = 1 MHz
-
4
-
pF
f T
transition frequency
I E = - 10 mA; V CB = - 5 V; f = 100 MHz 100
-
-
MHz
F
noise figure; BC559C
I C =
-
200
m
A; V CE =
-
5 V; R S =2k
W
;
-
-
4
dB
f = 30 Hz to 15.7 kHz
I=
-
200
m
A; V CE =
-
5 V; R S =2k
W
;
-
-
4
dB
f = 1 kHz; B = 200 Hz
1.7 mV/K with increasing temperature.
2. V BE decreases by about - 2 mV/K with increasing temperature.
-
1999 May 28
3
°
Notes
1. V BEsat decreases by about
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Philips Semiconductors
Product specification
PNP general purpose transistor
BC559
MBH728
600
handbook, full pagewidth
h FE
500
V CE = - 5 V
400
300
200
100
10 - 2
10 - 1
10 2
10 3
1
10
-
-
-
-
-
I C (mA)
-
BC559C.
Fig.2 DC current gain; typical values.
1999 May 28
4
0
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Philips Semiconductors
Product specification
PNP general purpose transistor
BC559
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e 1
D
e
3
b 1
L 1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b 1
0.66
0.56
c
D
d
E
e
e 1
L
L 1 (1)
mm
5.2
5.0
0.48
0.40
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT54
TO-92
SC-43
97-02-28
1999 May 28
5
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