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PNP general purpose transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC559
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jun 03
1999 May 28
Philips Semiconductors
Product specification
PNP general purpose transistor
BC559
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
Low voltage (max. 30 V).
1
emitter
2
base
APPLICATIONS
3
collector
·
General purpose switching and amplification.
DESCRIPTION
handbook, halfpag
1
2
3
3
PNP transistor in a TO-92 (SOT54) plastic package.
NPN complement: BC549.
2
MAM281
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
30
V
V
CEO
collector-emitter voltage
open base
-
-
30
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
£
25
°
C
-
500
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
1999 May 28
2
Philips Semiconductors
Product specification
PNP general purpose transistor
BC559
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
1
-
15
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
°
C
-
-
-
4
m
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5V
-
-
-
100 nA
h
FE
DC current gain; BC559C
I
C
=
-
2 mA; V
CE
=
-
5 V; see Fig.2
420
-
800
V
CEsat
collector-emitter saturation
voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
60
-
300 mV
I
C
=
-
100 mA; I
B
=
-
5mA
-
-
180
-
650 mV
V
BEsat
base-emitter saturation voltage I
C
=
-
10 mA; I
B
=
-
0.5 mA; note 1
-
-
750
-
mV
I
C
=
-
100 mA; I
B
=
-
5 mA; note 1
-
-
930
-
mV
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V; note 2
-
600
-
650
-
750 mV
I
C
=
-
10 mA; V
CE
=
-
5 V; note 2
-
-
-
820 mV
C
c
collector capacitance
I
E
=i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
4
-
pF
f
T
transition frequency
I
E
=
-
10 mA; V
CB
=
-
5 V; f = 100 MHz 100
-
-
MHz
F
noise figure; BC559C
I
C
=
-
200
m
A; V
CE
=
-
5 V; R
S
=2k
W
;
-
-
4
dB
f = 30 Hz to 15.7 kHz
I=
-
200
m
A; V
CE
=
-
5 V; R
S
=2k
W
;
-
-
4
dB
f = 1 kHz; B = 200 Hz
1.7 mV/K with increasing temperature.
2. V
BE
decreases by about
-
2 mV/K with increasing temperature.
-
1999 May 28
3
°
Notes
1. V
BEsat
decreases by about
Philips Semiconductors
Product specification
PNP general purpose transistor
BC559
MBH728
600
handbook, full pagewidth
h
FE
500
V
CE
=
-
5 V
400
300
200
100
10
-
2
10
-
1
10
2
10
3
1
10
-
-
-
-
-
I
C
(mA)
-
BC559C.
Fig.2 DC current gain; typical values.
1999 May 28
4
0
Philips Semiconductors
Product specification
PNP general purpose transistor
BC559
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
D
e
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
1
0.66
0.56
c
D
d
E
e
e
1
L
L
1
(1)
mm
5.2
5.0
0.48
0.40
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT54
TO-92
SC-43
97-02-28
1999 May 28
5
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