tda8171(1).pdf

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VERTICAL DEFLECTION BOOSTER
TDA8171
VERTICAL DEFLECTION BOOSTER
. POWER AMPLIFIER
. FLYBACK GENERATOR
ADVANCE DATA
. OUTPUT CURRENT UP TO 3.0A PP
. FLYBACK VOLTAGE UP TO 70V (on Pin 5)
. INTERNAL REFERENCE VOLTAGE
HEPTAWATT
(Plastic Package)
DESCRIPTION
Designed for monitors and high performance TVs,
the TDA8171 vertical deflection booster delivers
flyback voltages up to 70V.
The TDA8171 operates with supplies up to 35Vand
provides up to 3App output current to drive the
yoke.
The TDA8171 is offered in HEPTAWATT package.
ORDER CODE : TDA8171
PIN CONNECTIONS
7
6
5
4
3
2
1
NON-INVERTING INPUT + REFERENCE VOLTAGE
OUTPUT STAGE SUPPLY
OUTPUT
GROUND
FLYBACK GENERATOR
SUPPLY VOLTAGE
INVERTING INPUT
Tab connected to pin 4
October 1994
1/5
. THERMAL PROTECTION
11039353.002.png
TDA8171
BLOCK DIAGRAM
SUPPLY
VOLTAGE
OUTPUT
STAGE
SUPPLY
FLYBACK
GENERATOR
2
6
3
REFERENCE
VOLTAGE
FLYBACK
GENERATOR
INVERTING INPUT
1
10k W
POWER
AMPLIFIER
5
OUTPUT
NON-INVERTING
+ REFERENCE VOLTAGE
7
THERMAL
PROTECTION
TDA8171
4
GROUND
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V S
Supply Voltage (Pin 2) (see note 1)
40
V
V 6
Flyback Peak Voltage (Pin 6) (see note 1)
75
V
V 1 ,V 7 Amplifier Input Voltage (Pins 1-7) (see note 1)
- 0.3, + V S
V
I O
Maximum Output Peak Current (see notes 2 and 3)
2.5
A
I 3
Maximum Sink Current (first part of flyback) (t < 1ms)
2.5
A
I 3
Maximum Source Current (t < 1ms)
2.5
A
V ESD
Electrostatic Handling for all pins (see note 4)
2000
V
T oper
Operating Ambient Temperature
- 20, + 75
o C
T stg
Storage Temperature
- 40, + 150
o C
T j
Junction Temperature
+150
o C
Notes : 1. Versus GND.
2. The output current can reach 4A peak for t
s (up to 120Hz).
3. Provided SOAR is respected (see Figures 1 and 2).
4. Equivalent to discharging a 100pF capacitor through a 1.5k
3
10
m
W
series resistor.
THERMAL DATA
Symbol
Parameter
Value
Unit
R th (j-c)
Junction-case Thermal Resistance
Max.
3
o C/W
T t
Temperature for Thermal Shutdown
150
o C
T jr
Recommended Max. Junction Temperature
120
o C
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11039353.003.png
TDA8171
ELECTRICAL CHARACTERISTICS
(V S = 35V, T A =25 o C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Unit
V S
Operating Supply Voltage Range
10
35
V
I 2
Pin 2 Quiescent Current
I 3 =0,I 5 =0
9
20
mA
I 6
Pin 6 Quiescent Current
I 3 =0,I 5 =0,V 6 = 35V
8
15
30
mA
I O
Max. Peak Output Current
1.5
A
I 1
Amplifier Bias Current
V 1 =1V
-1
A
V 7
Reference Voltage
2.35
V
D
V 7 /
D
V S Reference Voltage Drift versus Supply Voltage
1
2
mV/V
D
V 7 /
D
t Reference Voltage Drift versus Temperature
0.15
mV/ o C
GV
Voltage Gain
80
dB
V 5L
Output Saturation Voltage to GND (Pin 4)
I 5 = 1.5A
1
1.7
V
V 5H
Output Saturation Voltage to Supply (Pin 6)
I 5 = - 1.5A
1.8
2.3
V
V D5 - 6
Diode Forward Voltage between Pins 5-6
I 5 = 1.5A
1.8
2.3
V
V D3 - 2
Diode Forward Voltage between Pins 3-2
I 3 = 1.5A
1.6
2.2
V
V 3SL
Saturation Voltage on Pin 3
I 3 = 20mA
0.4
1
V
V 3SH
Saturation Voltage to Pin 2 (2nd part of flyback) I 3 = - 1.5A
2.1
2.8
V
APPLICATION CIRCUIT
+V S
C F
2
6
3
REFERENCE
VOLTAGE
FLYBACK
GENERATOR
R5
1
10k W
POWER
AMPLIFIER
5
7
THERMAL
PROTECTION
1.5 W
330 W
YOKE
TDA8171
4
0.22 m F
R3
R4
C L
R2
R1
3/5
m
11039353.004.png
TDA8171
Figure 1 : Output Transistors SOA
(for secondary breakdown)
Figure 2 : Secondary Breakdown Temperature
Derating Curve
(ISB = secondary breakdown current)
I (A)
C
ISB (%)
10
100
@T case =25 ° C
1
90
80
10 -1
t = 1ms
t = 10ms
t = 100ms
70
10 -2
V()
CE
T case ( ° C)
10 2
60
1
10
25
50
75
100
125
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11039353.005.png
TDA8171
PACKAGE MECHANICAL DATA : HEPTAWAT
L
L1
L5
L2
L3
Dia.
L7
L6
Dimensions
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.8
0.189
C
1.37
0.054
D
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
E
0.35
0.55
0.014
0.022
F
0.6
08
0.024
0.031
F1
0.9
0.035
G
2.41
2.54
2.67
0.095
0.100
0.105
G1
4.91
5.08
5.21
0.193
0.200
0.205
G2
7.49
7.62
7.8
0.295
0.300
0.307
H2
10.4
0.409
H3
10.05
10.4
0.396
0.409
L
16.97
0.668
L1
14.92
0.587
L2
21.54
0.848
L3
22.62
0.891
L5
2.6
3
0.102
0.118
L6
15.1
15.8
0.594
0.622
L7
6
6.6
0.236
0.260
M
2.8
0.110
M1
5.08
0.200
Dia.
3.65
3.85
0.144
0.152
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
{
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I 2 C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips
I 2 C Patent. Rights to use these components in a I 2 C system, is granted provided that the system confo rms to
the I 2 C Standard Specifications as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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