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SENSITIVE GATE TRIACS
)
Z01xxxA
SENSITIVE GATE TRIACS
FEATURES
I T(RMS) =0.8A
V DRM = 400V to 800V
I GT
A1
G
A2
DESCRIPTION
The Z01xxxA series of triacs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where gate high sensitivity is
required.
TO92
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I T(RMS)
RMS on-state current
(360
Tl= 70
°
C
0.8
A
°
conduction angle)
I TSM
Non repetitive surge peak on-state current
(T j initial = 25 ° C)
tp = 8.3 ms
8.5
A
tp = 10 ms
8
I 2 t
I 2 t Value for fusing
tp = 10 ms
0.32
A 2 s
dI/dt
Critical rate of rise of on-state current
I G =50mA
Repetitive
F = 50 Hz
10
A/ m s
di G /dt = 0.1 A/ m s.
Non
Repetitive
50
T stg
T j
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
C
Tl
Maximum lead temperature for soldering during 10s at
2mm from case
260
C
Symbol
Parameter
Unit
DMSN
Voltage
DRM
V RRM
Repetitive peak off-state voltage
T j = 125
400
600
700
800
V
C
January 1995
1/5
3 3mA to 3 25mA
°
°
°
11011000.002.png
Z01xxxA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
150
°
C/W
Rth(j-l)
Junction to leads for D.C
80
° C/W
Rth(j-l)
Junction to leads for A.C 360
°
conduction angle (F=50Hz)
60
° C/W
GATE CHARACTERISTICS (maximum values)
P G (AV) = 0.1 W P GM = 2 W (tp = 20 m s)
I GM = 1 A (tp = 20 m s)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Sensitivity
Unit
03 07 09 10
I GT
V D =12V (DC) R L =140
W
Tj= 25
°
C
I-II-III
MAX
3
5
10 25
mA
IV
MAX
5
7
10 25
V GT
V D =12V (DC) R L =140 W
Tj= 25 ° C I-II-III-IV MAX
1.5
V
V GD
V D =V DRM R L =3.3k W
Tj= 125 ° C I-II-III-IV MIN
0.2
V
tgt
V D =V DRM I G = 40mA
I T =1.1A
dI G /dt = 0.5A/ m s
Tj= 25 ° C I-II-III-IV TYP
2
m s
I H *
I T = 50 mA Gate open
Tj= 25
°
C
MAX
7
10 10 25
mA
I L
I G =1.2I GT
Tj= 25 ° C
I-III-IV
TYP
7
10 10 25
mA
II
TYP 14 20 20 50
V TM *
I TM = 1.1A tp= 380
m
s
Tj= 25
°
C
MAX
1.5
V
I DRM
I RRM
V D =V DRM
V R =V RRM
Tj= 25 ° C
MAX
10
m A
Tj= 110 ° C
MAX
200
dV/dt *
VD=67%V DRM
Gate open
Tj= 110
°
C
MIN 10 20 50 100 V/
m
s
TYP 20 50 150 400
(dV/dt)c * (dI/dt)c = 0.35 A/ms
Tj= 110
°
C
MIN
2
5
V/
m
s
TYP
1
1
* For either polarity of electrode A 2 voltage with reference to electrode A 1
ORDERING INFORMATION
Z17MA
TRIAC TOP GLASS
PACKAGE :
A = TO92
VOLTAGE
CURRENT
SENSITIVITY
2/5
)
11011000.003.png
Z01xxxA
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tlead).
P(W)
P(W)
Tlead ( C)
o
1
1
-65
180 O
Rth(j-l)
Rth(j-a)
= 180 o
-75
0.8
0.8
=120 o
-85
0.6
=90 o
=6 o
0.6
-95
0.4
0.4
=30 o
-105
0.2
0.2
-115
I
(A)
T(RMS)
Tamb ( C)
o
0
0
-125
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0000000
Fig.3 : RMS on-state current versus case tempera-
ture.
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
I
T(RMS)
(A)
Zth(j-a)/Rth(j-a)
1
1.00
0.8
0.6
= 180 o
0.10
0.4
0.2
Tlead( C)
o
tp (s )
0
0.01
0 10 20 30 40 50 60 70 80 90 100 110 120 130
1E-3
1E-2
1E-1
1 E+0
1 E+1
1E +2 5 E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 C]
I
(A)
TSM
o
o
7
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Tj in itial = 25 C
o
6
5
Igt
4
Ih
3
2
1
Tj( C)
o
Number of cycles
0
-40 -20
0
20 40
60
80 100 120 140
1
10
100
1000
3/5
)
11011000.004.png
Z01xxxA
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
Fig.8 : On-state characteristics (maximum values).
3
10ms, and
corresponding value of I 2 t.
I
TSM
(A). I 2 t(A 2 s)
I
TM
(A)
100
10
Tj ini tia l = 25 o
Tj initial
25 o
10
I TSM
1
Tj max
1
I 2 t
Tj max
Vto =0. 95V
Rt =0.420
tp(ms)
V (V)
TM
0.1
0.1
1
10
0.51.52.53.54
4/5
)
11011000.005.png
Z01xxxA
PACKAGE MECHANICAL DATA
TO92 (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
A
a
A
1.35
0.053
B
C
B
4.7
0.185
C 2.54
0.100
D
4.4 4.8
0.173 0.189
F
D
E
E
12.7
0.500
F
3.7
0.146
a
0.45
0.017
Marking : type number
Weight : 0.2 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
{
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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)
11011000.001.png

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