BTA10GP.PDF

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TRIACS
BTA10 GP
TRIACS
. HIGH SURGE CURRENT : I TSM = 120A
. I GT SPECIFIED IN FOUR QUADRANTS
. INSULATING VOLTAGE = 2500V (RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
A1
A2
G
The BTA10 GP’s use high performance, glass pas-
sivated chips.
The insulated TO220AB package, the high surge
current and low holding current make this family
well adapted to LIGHT DIMMER applications.
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I T(RMS)
RMS on-state current
(360
Tc = 90
°
C
10
A
°
conduction angle)
I TSM
Non repetitive surge peak on-state current
( Tj initial = 25
tp = 8.3 ms
126
A
°
C)
tp = 10 ms
120
I 2 t
I 2 t value
tp = 10 ms
72
A 2 s
dI/dt
Critical rate of rise of on-state current
Gate supply : I G = 500mA di G /dt = 1A/
Repetitive
F = 50 Hz
10
A/
m
s
m
s
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°
C
Symbol
Parameter
BTA10-
Unit
400 GP
600 GP
V DRM
V RRM
Repetitive peak off-state voltage
Tj = 125
400
600
V
C
March 1995
1/4
FEATURES
. LOW I H = 13mA max
°
11010963.001.png
BTA10 GP
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°
C/W
Rth (j-c) DC Junction to case for DC
4
°
C/W
Rth (j-c) AC Junction to case for 360
°
conduction angle
3
°
C/W
( F= 50 Hz)
GATE CHARACTERISTICS (maximum values)
P G (AV) =1W P GM = 10W (tp = 20
m
s)
I GM =4A(tp=20
m
s)
V GM = 16V (tp = 20
m
s).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
GP
I GT
V D =12V (DC) R L =33
W
Tj=25
°
C
I-II-III
MAX
50
mA
IV
MAX
75
V GT
V D =12V (DC) R L =33
W
Tj=25
°
C
I-II-III-IV
MAX
1.5
V
V GD
V D =V DRM R L =3.3k
W
Tj=110
°
C
I-II-III-IV
MIN
0.2
V
tgt
V D =V DRM I G = 500mA
dI G /dt = 3A/
Tj=25
°
C
I-II-III-IV
TYP
2
m
s
m
s
I L
I G =1.2 I GT
Tj=25 ° C
I-III- IV
TYP
20
mA
II
40
I H *
I T = 100mA gate open
Tj=25
°
C
MAX
13
mA
V TM *
I TM = 14A tp= 380
m
s
Tj=25
°
C
MAX
1.5
V
I DRM
I RRM
V DRM Rated
V RRM Rated
Tj=25
°
C
MAX
0.01
mA
Tj=110
°
C
MAX
0.5
dV/dt *
Linear slope up to V D =67%V DRM
gate open
Tj=110
°
C
MIN
30
V/
m
s
TYP
100
(dV/dt)c * (dI/dt)c= 2.2A/ms
Tj=110
°
C
MIN
1
V/
m
s
TYP
10
* For either polarity of electrode A 2 voltage with reference to electrode A 1 .
2/4
11010963.002.png
BTA10 GP
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T amb
and T case ) for different thermal resistances heatsink +
contact.
P(W)
P(W)
Tcase ( C)
o
14
14
o
-85
180 O
Rth = 0 C/W
2.5 C/W
5C/W
10 C/W
o
12
=180 o
= 120 o
=90 o
=60 o
12
o
o
-95
10
10
8
8
-105
6
6
4
=30 o
4
-115
2
I
(A)
2
T(RMS)
Tamb ( C)
o
0
0
-125
01234567890
0 0000000
Fig.3 : RMS on-state current versus case temperature.
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
I
T(RMS)
(A)
Zth/Rth
12
1
10
Zt h( j-c )
8
6
0.1
Zt h( j-a )
= 180 o
4
2
Tcase( C)
o
tp (s )
0
0.01
0 10 20 30 40 50 60 70 80 90 100 110 120 130
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
3/4
11010963.003.png
BTA10 GP
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
Fig.8 : On-state characteristics (maximum values).
corresponding values of I 2 t.
3
10ms, and
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
DIMENSIONS
Millimeters
Inches
A
H
Min.
Max.
Min.
Max.
G
J
A
10.20
10.50
0.401
0.413
B
14.23
15.87
0.560
0.625
I
D
C
12.70
14.70
0.500
0.579
D
5.85
6.85
0.230
0.270
B
F
4.50
0.178
G
2.54
3.00
0.100
0.119
H
4.48
4.82
0.176
0.190
O
F
I
3.55
4.00
0.140
0.158
L
J
1.15
1.39
0.045
0.055
P
C
L
0.35
0.65
0.013
0.026
M
2.10
2.70
0.082
0.107
M
N
4.58
5.58
0.18
0.22
==
N
O
0.80
1.20
0.031
0.048
P
0.64
0.96
0.025
0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
{
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
4/4
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