BTA04.PDF

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SENSITIVE GATE TRIACS
BTA04 T/D/S/A
BTB04 T/D/S/A
SENSITIVE GATE TRIACS
. VERY LOW I GT = 10mA max
. BTA Family :
INSULATING VOLTAGE = 2500V (RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
A1
A2
The BTA/BTB04 T/D/S/A triac family are high per-
formance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
G
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I T(RMS)
RMS on-state current
(360
BTA
Tc = 90
°
C
4
A
°
conduction angle)
BTB
Tc = 95
°
C
I TSM
Non repetitive surge peak on-state current
( Tj initial = 25
tp = 8.3 ms
42
A
°
C)
tp = 10 ms
40
I 2 t
I 2 t value
tp = 10 ms
8
A 2 s
dI/dt
Critical rate of rise of on-state current
Gate supply : I G = 50mA di G /dt = 0.1A/
Repetitive
F = 50 Hz
10
A/
m
s
m
s
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 110
C
° C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°
C
Symbol
Parameter
BTA / BTB04-
Unit
400 T/D/S/ A
600 T/D/S/A
700 T/D/S/A
V DRM
V RRM
Repetitive peak off-state voltage
Tj = 110
400
600
700
V
°
C
March 1995
1/5
FEATURES
. LOW I H = 15mA max
°
11011194.002.png
BTA04 T/D/S/A / BTB04 T/D/S/A
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°
C/W
Rth (j-c) DC Junction to case for DC
BTA
4.4
° C/W
BTB
3.2
Rth (j-c) AC Junction to case for 360
°
conduction angle
BTA
3.3
°
C/W
( F= 50 Hz)
BTB
2.4
GATE CHARACTERISTICS (maximum values)
P G (AV) =1W P GM = 40W (tp = 20
m
s)
I GM = 4A (tp = 20
m
s)
V GM = 16V (tp = 20
m
s).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
T
DS
A
I GT
V D =12V (DC) R L =33
W
Tj=25
°
C
I-II-II I
MAX
5
5
10
10
mA
IV
MAX
5
10
10
25
V GT
V D =12V (DC) R L =33
W
Tj=25
°
C
I-II-III-IV
MAX
1.5
V
V GD
V D =V DRM R L =3.3k
W
Tj=110
°
C
I-II-III-IV
MIN
0.2
V
tgt
V D =V DRM I G = 40mA
dI G /dt = 0.5A/
Tj=25
°
C
I-II-III-IV
TYP
2
m
s
m
s
I L
IG= 1.2 I GT
Tj=25
°
C
I-III-IV
TYP
10
10
20
20
mA
II
20
20
40
40
I H *
I T = 100mA gate open
Tj=25
°
C
MAX
15
15
25
25
mA
V TM *
I TM = 5.5A tp= 380
m
s
Tj=25
°
C
MAX
1.65
V
I DRM
I RRM
V DRM Rated
V RRM Rated
Tj=25
°
C
MAX
0.01
mA
Tj=110
°
C
MAX
0.75
dV/dt *
Linear
slope up
to
Tj=110
°
C
TYP
10
10
-
-
V/
m
s
V D =67%V DRM
gate open
MIN
-
-
10
10
(dV/dt)c * (dI/dt)c = 1.8A/ms
Tj=110
°
C
TYP
1
1
5
5
V/
m
s
* For either polarity of electrode A 2 voltage with reference to electrode A 1 .
2/5
11011194.003.png
BTA04 T/D/S/A / BTB04 T/D/S/A
ORDERING INFORMATION
Package
I T(RMS)
V DRM /V RRM
Sensitivity Specification
A
V
T
D
S
A
BTA
(Insulated)
4
400
X
X
X
X
600
X
X
X
X
700
X
X
X
X
BTB
(Uninsulated)
400
X
X
X
X
600
X
X
X
X
700
X
X
X
X
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T amb
and T case ) for different thermal resistances heatsink +
contact (BTA).
Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T amb
and T case ) for different thermal resistances heatsink +
contact (BTB).
Fig.4 : RMS on-state current versus case temperature.
3/5
11011194.004.png
BTA04 T/D/S/A / BTB04 T/D/S/A
Fig.5 : Relative variation of thermal impedance versus
pulse duration.
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Zth/Rth
1
Zt h( j-c )
0.1
Zth(j-a)
tp(s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
3
10ms, and
corresponding value of I 2 t.
Fig.9 : On-state characteristics (maximum values).
4/5
11011194.005.png
BTA04 T/D/S/A / BTB04 T/D/S/A
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
DIMENSIONS
Millimeters
Inches
A
H
Min.
Max.
Min.
Max.
G
J
A
10.20
10.50
0.401
0.413
B
14.23
15.87
0.560
0.625
I
D
C
12.70
14.70
0.500
0.579
D
5.85
6.85
0.230
0.270
B
F
4.50
0.178
G
2.54
3.00
0.100
0.119
H
4.48
4.82
0.176
0.190
O
F
I
3.55
4.00
0.140
0.158
L
J
1.15
1.39
0.045
0.055
P
C
L
0.35
0.65
0.013
0.026
M
2.10
2.70
0.082
0.107
M
N
4.58
5.58
0.18
0.22
==
O
0.80
1.20
0.031
0.048
P
0.64
0.96
0.025
0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
{
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
N
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