BT151F_SERIES_1.pdf

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22887376 UNPDF
Philips Semiconductors
Product specification
Thyristors
BT151F series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated thyristors in a full
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
pack, plastic envelope, intended for
use in applications requiring high
BT151F- 500
650
800
bidirectional
blocking
voltage
V DRM ,
Repetitive peak off-state
500
650
800
V
capability and high thermal cycling
V RRM
voltages
performance. Typical applications
I T(AV)
Average on-state current
5.7
5.7
5.7
A
include motor control, industrial and
I T(RMS)
RMS on-state current
9
9
9
A
domestic lighting, heating and static
I TSM
Non-repetitive peak on-state
100
100
100
A
switching.
current
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1
cathode
a
k
2
anode
3
gate
g
case isolated
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500 -650 -800
V DRM , V RRM Repetitive peak off-state
-
500 1
650 1
800
V
voltages
I T(AV)
Average on-state current half sine wave; T hs
£
87 ˚C
-
5.7
A
I T(RMS)
RMS on-state current
all conduction angles
-
9
A
I TSM
Non-repetitive peak
half sine wave; T j = 125 ˚C prior
on-state current
to surge; with reapplied V DRM(max)
t = 10 ms
-
100
A
t = 8.3 ms
-
110
A
I 2 t
I 2 t for fusing
t = 10 ms
-
50
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 20 A; I G = 50 mA;
-
50
A/
m
s
on-state current after
dI G /dt = 50 mA/
m
s
triggering
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
V RGM
Peak reverse gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
m
s.
February 1996
1
Rev 1.100
22887376.004.png
Philips Semiconductors
Product specification
Thyristors
BT151F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
Repetitive peak voltage from all R.H.
£
65% ; clean and dustfree
-
1500
V
three terminals to external
heatsink
C isol
Capacitance from T2 to external f = 1 MHz
-
12
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance
with heatsink compound
-
-
4.5
K/W
junction to heatsink
without heatsink compound
-
-
6.5
K/W
R th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
-
2
15
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
-
10
40
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
7
20
mA
V T
On-state voltage
I T = 23 A
-
1.4
1.75
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.6
1.5
V
V D = V DRM(max) ; I T = 0.1 A; T j = 125 ˚C
0.25
0.4
-
V
I D , I R
Off-state leakage current V D = V DRM(max) ; V R = V RRM(max) ; T j = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ; T j = 125 ˚C;
Gate open circuit
50
130
-
V/
m
s
R GK = 100
W
200 1000
-
V/
m
s
t gt
Gate controlled turn-on
I TM = 40 A; V D = V DRM(max) ; I G = 0.1 A;
-
2
-
m
s
time
dI G /dt = 5 A/
m
s
t q
Circuit commutated
V D = 67% V DRM(max) ; T j = 125 ˚C;
-
70
-
m
s
turn-off time
I TM = 20 A; V R = 25 V; dI TM /dt = 30 A/
m
s;
dV D /dt = 50 V/
m
s; R GK = 100
W
February 1996
2
Rev 1.100
off-state voltage
exponential waveform
22887376.005.png
Philips Semiconductors
Product specification
Thyristors
BT151F series
10
Ptot / W
BT151F
Ths(max) / C
80
120
ITSM / A
BT151
conduction
angle
form
factor
a = 1.57
I
T
I TSM
degrees
30
60
90
120
180
a
100
89
8
4
2.8
2.2
1.9
1.57
1.9
T
time
2.2
80
Tj initial = 125 C max
2.8
6
98
4
60
4
107
40
2
116
20
0
125
0
0
1
2
3
4
5
6
1
10
100
1000
IF(AV) / A
Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, P tot , versus
average on-state current, I T(AV) , where
a = form factor = I T(RMS) / I T(AV) .
Fig.4. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000
ITSM / A
BT151
25
IT(RMS) / A
BT151
20
dI /dt limit
T
15
100
10
I TSM
T
T
time
5
Tj initial = 125 C max
10us
100us
1ms
10ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
10ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T hs
£
87˚C.
10
IT(RMS) / A
BT151F
VGT(Tj)
VGT(25 C)
BT151
87 C
1.6
8
1.4
6
1.2
1
4
0.8
2
0.6
0
-50
0
50
100
150
0.4
-50
0
50
100
150
Ths / C
Tj / C
Fig.3. Maximum permissible rms current I T(RMS) ,
versus heatsink temperature T hs .
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
February 1996
3
Rev 1.100
I
10
0
22887376.006.png 22887376.007.png
Philips Semiconductors
Product specification
Thyristors
BT151F series
IGT(Tj)
IGT(25 C)
30
IT / A
Tj = 125 C
Tj = 25 C
BT151
BT151
3
25
2.5
Vo = 1.06 V
Rs = 0.0304 ohms
typ
max
20
2
1.5
15
1
10
0.5
5
0
-50
0
50
100
150
0
0
0.5
1
1.5
2
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
10
Zth j-hs (K/W)
BT151
BT145
3
without heatsink compound
2.5
1
with heatsink compound
2
1.5
0.1
1
P
t p
0.01
0.5
t
0
-50
0
50
100
150
0.001
10us
0.1ms
1ms
10ms
0.1s
1s
10s
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-hs , versus
pulse width t p .
IH(Tj)
IH(25 C)
10000
dVD/dt (V/us)
BT151
3
2.5
2
1000
1.5
RGK = 100 Ohms
1
100
gate open circuit
0.5
-50
0
50
100
150
10
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
February 1996
4
Rev 1.100
D
0
22887376.001.png
Philips Semiconductors
Product specification
Thyristors
BT151F series
MECHANICAL DATA
Dimensions in mm
10.2
max
5.7
max
3.2
3.0
Net Mass: 2 g
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
seating
plane
17
max
3.5 max
not tinned
4.4
13.5
min
12 3
0.4
M
0.9
0.7
0.55 max
2.54
5.08
1.3
top view
Fig.13. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1996
5
Rev 1.100
22887376.002.png 22887376.003.png

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