BT139X_SERIES_E_1.pdf

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Philips Semiconductors
Product specification
sensitive gate
BT139X series E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
triacs in a full pack plastic envelope,
intended for use in general purpose
BT139X- 500E 600E 800E
bidirectional switching and phase
V DRM
Repetitive peak off-state
500
600
800
V
control applications, where high
voltages
sensitivity is required in all four
I T(RMS)
RMS on-state current
16
16
16
A
quadrants.
I TSM
Non-repetitive peak on-state
140
140
140
A
current
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1
main terminal 1
T2
T1
2
main terminal 2
3
gate
case isolated
12 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500 -600 -800
V DRM
Repetitive peak off-state
-
500 1
600 1
800
V
voltages
I T(RMS)
RMS on-state current
full sine wave; T hs
£
38 ˚C
-
16
A
I TSM
Non-repetitive peak
full sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 20 ms
-
140
A
t = 16.7 ms
-
150
A
I 2 t
I 2 t for fusing
t = 10 ms
-
98
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 20 A; I G = 0.2 A;
on-state current after
dI G /dt = 0.2 A/
m
s
triggering
T2+ G+
-
50
A/
m
s
T2+ G-
-
50
A/
m
s
T2- G-
-
50
A/
m
s
T2- G+
-
10
A/
m
s
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
m
s.
September 1997
1
Rev 1.200
Triacs
22887454.004.png
Philips Semiconductors
Product specification
sensitive gate
BT139X series E
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance
full or half cycle
junction to heatsink
with heatsink compound
-
-
4.0
K/W
without heatsink compound
-
-
5.5
K/W
R th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
T2+ G+
-
2.5
10
mA
T2+ G-
-
4.0
10
mA
T2- G-
-
5.0
10
mA
T2- G+
-
11
25
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
T2+ G+
-
3.2
30
mA
T2+ G-
-
16
40
mA
T2- G-
-
4.0
30
mA
T2- G+
-
5.5
40
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
4.0
30
mA
V T
On-state voltage
I T = 20 A
-
1.2
1.6
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.7
1.5
V
V D = 400 V; I T = 0.1 A; T j = 125 ˚C
0.25
0.4
-
V
I D
Off-state leakage current V D = V DRM(max) ; T j = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ; T j = 125 ˚C;
-
50
-
V/
m
s
off-state voltage
exponential waveform; gate open circuit
t gt
Gate controlled turn-on
I TM = 20 A; V D = V DRM(max) ; I G = 0.1 A;
-
2
-
m
s
time
dI G /dt = 5 A/
m
s
September 1997
2
Rev 1.200
Triacs
22887454.005.png
Philips Semiconductors
Product specification
sensitive gate
BT139X series E
Ptot / W
BT139
Ths(max) / C
20
IT(RMS) / A
BT139X
25
25
= 180
38 C
20
45
120
90
60
30
15
1
15
65
10
10
85
5
105
5
0
0
5
10
15
20
125
-50
0
50
100
150
IT(RMS) / A
Ths / C
Fig.1. Maximum on-state dissipation, P tot , versus rms
on-state current, I T(RMS) , where
a
= conduction angle.
Fig.4. Maximum permissible rms current I T(RMS) ,
versus heatsink temperature T hs .
1000
ITSM / A
BT139
50
IT(RMS) / A
BT139
40
30
100
dI /dt limit
T
20
T2- G+ quadrant
I
T
I TSM
10
T
time
Tj initial = 25 C max
10
10us
100us
1ms
10ms
100ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T hs
£
38˚C.
150
ITSM / A
BT139
VGT(Tj)
VGT(25 C)
BT136
1.6
I TSM
I
T
T
time
1.4
100
Tj initial = 25 C max
1.2
1
50
0.8
0.6
0
1
10
100
1000
0.4
-50
0
50
100
150
Number of cycles at 50Hz
Tj / C
Fig.3. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
September 1997
3
Rev 1.200
Triacs
0
0
22887454.006.png
Philips Semiconductors
Product specification
sensitive gate
BT139X series E
IGT(Tj)
IGT(25 C)
BT139E
50
IT / A
Tj = 125 C
Tj = 25 C
BT139
3
T2+ G+
T2+ G-
T2- G-
T2- G+
typ
max
40
2.5
Vo = 1.195 V
Rs = 0.018 Ohms
2
30
1.5
20
1
0.5
10
0
-50
0
50
100
150
0
0
0.5
1
1.5
2
2.5
3
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
10
Zth j-hs (K/W)
BT139
TRIAC
3
with heatsink compound
without heatsink compound
2.5
1
unidirectional
bidirectional
2
1.5
0.1
1
P
t p
0.01
0.5
t
0
-50
0
50
100
150
0.001
10us
0.1ms
1ms
10ms
0.1s
1s
10s
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-hs , versus
pulse width t p .
IH(Tj)
IH(25C)
1000
dVD/dt (V/us)
TRIAC
3
2.5
2
100
1.5
1
10
0.5
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
September 1997
4
Rev 1.200
Triacs
D
22887454.007.png
Philips Semiconductors
Product specification
sensitive gate
BT139X series E
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
max.
19
max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
123
0.4
M
1.0 (2x)
0.6
0.9
0.7
2.54
0.5
5.08
2.5
1.3
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
Triacs
22887454.001.png 22887454.002.png 22887454.003.png

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