BT137S_SERIES_1.pdf

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22887018 UNPDF
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
envelope, suitable for surface
mounting, intended for use in
BT137S (or BT137M) - 500
600
800
applications
requiring
high
BT137S (or BT137M) - 500F 600F 800F
bidirectional transient and blocking
BT137S (or BT137M) - 500G 600G 800G
voltage capability and high thermal
V DRM
Repetitive peak off-state
500
600
800
V
cycling
performance.
Typical
voltages
applications include motor control,
I T(RMS)
RMS on-state current
8
8
8
A
industrial and domestic lighting,
I TSM
Non-repetitive peak on-state
65
65
65
A
heating and static switching.
current
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
tab
NUMBER
S
M
1
MT1
gate
T2
T1
2
MT2
MT2
3
gate
MT1
2
G
tab
MT2
MT2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500 -600 -800
V DRM
Repetitive peak off-state
-
500 1
600 1
800
V
voltages
I T(RMS)
RMS on-state current
full sine wave; T mb
£
102 ˚C
-
8
A
I TSM
Non-repetitive peak
full sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 20 ms
-
65
A
t = 16.7 ms
-
71
A
I 2 t
I 2 t for fusing
t = 10 ms
-
21
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 12 A; I G = 0.2 A;
on-state current after
dI G /dt = 0.2 A/
m
s
triggering
T2+ G+
-
50
A/
m
s
T2+ G-
-
50
A/
m
s
T2- G-
-
50
A/
m
s
T2- G+
-
10
A/
m
s
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
m
s.
October 1997
1
Rev 1.200
22887018.006.png
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance
full cycle
-
-
2.0
K/W
junction to mounting base half cycle
-
-
2.4
K/W
R th j-a
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT137S- (or BT137M)
...
...F
...G
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
T2+ G+
-
5
35
25
50
mA
T2+ G-
-
8
35
25
50
mA
T2- G-
-
11
35
25
50
mA
T2- G+
-
30
70
70
100
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
T2+ G+
-
7
30
30
45
mA
T2+ G-
-
16
45
45
60
mA
T2- G-
-
5
30
30
45
mA
T2- G+
-
7
45
45
60
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
5
20
20
40
mA
V T
On-state voltage
I T = 10 A
-
1.3
1.65
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.7
1.5
V
V D = 400 V; I T = 0.1 A;
0.25
0.4
-
V
T j = 125 ˚C
I D
Off-state leakage current V D = V DRM(max) ;
-
0.1
0.5
mA
T j = 125 ˚C
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT137S- (or BT137M)
...
...F
...G
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ;
100
50
200
250
-
V/
m
s
off-state voltage
T j = 125 ˚C; exponential
waveform; gate open
circuit
dV com /dt
Critical rate of change of V DM = 400 V; T j = 95 ˚C;
-
-
10
20
-
V/
m
s
commutating voltage
I T(RMS) = 8 A;
dI com /dt = 3.6 A/ms; gate
open circuit
t gt
Gate controlled turn-on
I TM = 12 A; V D = V DRM(max) ;
-
-
-
2 -
m
s
time
I G = 0.1 A; dI G /dt = 5 A/
m
s
October 1997
2
Rev 1.200
22887018.007.png 22887018.008.png 22887018.009.png
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
12
Ptot / W
BT137
Tmb(max) / C
10
IT(RMS) / A
BT137
101
= 180
120
90
10
105
8
102 C
1
8
60
30
109
6
6
113
4
4
117
2
121
2
0
0
2
4
6
8
10
125
-50
0
50
100
150
IT(RMS) / A
Tmb / C
Fig.1. Maximum on-state dissipation, P tot , versus rms
on-state current, I T(RMS) , where
a
= conduction angle.
Fig.4. Maximum permissible rms current I T(RMS) ,
versus mounting base temperature T mb .
ITSM / A
BT137
IT(RMS) / A
BT137
1000
25
I TSM
I
T
time
20
Tj initial = 25 C max
15
100
dI /dt limit
T
10
T2- G+ quadrant
5
10us
100us
1ms
10ms
100ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T mb
£
102˚C.
80
ITSM / A
BT137
VGT(Tj)
VGT(25 C)
BT136
1.6
I TSM
70
I
T
60
T
time
1.4
50
Tj initial = 25 C max
1.2
40
1
30
0.8
20
10
0.6
0
1
10
100
1000
0.4
-50
0
50
100
150
Number of cycles at 50Hz
Tj / C
Fig.3. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
October 1997
3
Rev 1.200
0
BT137
10
0
1
22887018.001.png
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
IGT(Tj)
IGT(25 C)
IT / A
Tj = 125 C
Tj = 25 C
BT137
3
BT137
25
T2+ G+
T2+ G-
T2- G-
T2- G+
20
typ
max
2.5
Vo = 1.264 V
Rs = 0.0378 Ohms
2
15
1.5
10
1
0.5
5
0
-50
0
50
100
150
0
0
0.5
1
1.5
2
2.5
3
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
BT137
10
TRIAC
3
2.5
unidirectional
1
bidirectional
2
1.5
1
0.1
P
D
t p
0.5
t
0
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
-50
0
50
100
150
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-mb , versus
pulse width t p .
IH(Tj)
IH(25C)
1000
dV/dt (V/us)
TRIAC
3
off-state dV/dt limit
BT137...G SERIES
2.5
BT137 SERIES
BT137...F SERIES
2
100
1.5
dIcom/dt =
10 A/ms
7.9
6.1
4.7
3.6
2.8
10
1
0.5
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI T /dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI T /dt.
October 1997
4
Rev 1.200
22887018.002.png
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
MECHANICAL DATA
Dimensions in mm
seating plane
Net Mass: 1.1 g
6.73 max
1.1
2.38 max
0.93 max
5.4
tab
4 min
6.22 max
10.4 max
4.6
2
0.5 min
0.5
1
3
0.3
0.5
0.8 max
(x2)
2.285 (x2)
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
1.5
2.5
4.57
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
October 1997
5
Rev 1.200
22887018.003.png 22887018.004.png 22887018.005.png

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