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New Product
Si4418DY
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
TrenchFET
Power MOSFET
100% Rg
Tested
APPLICATIONS
200
0.130 @ V
GS
= 10 V
3
0.142 @ V
GS
= 6.0 V
2.8
Primary Side Switch
SO-8
D
S
1
8
D
S
2
3
4
7
D
S
6
D
G
G
5
D
Top View
S
Ordering Information: Si4418DY—E3
Si4418DY-T1—E3 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
200
V
Gate-Source Voltage
V
GS
20
T
A
= 25
C
3
2.3
Continuous Drain Current
(T
J
= 150
C)
a
I
D
T
A
= 85
C
2.1
1.6
A
Pulsed Drain Current
I
DM
12
Avalanche Current
L = 0.1 mH
I
AS
6
Single Avalanche Energy (Duty Cycle
1%)
E
AS
1.8
mJ
Continuous Source Current (Diode Conduction)
a
I
S
2.1
1.25
A
T
A
= 25
C
2.5
1.5
Maximum Power Dissipation
a
P
D
W
T
A
= 85
C
1.3
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
−55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
36
50
Maximum Junction-to-Ambient
a
J i tAbi
a
R
thJA
Steady State
71
85
C/W
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
www.vishay.com
1
200
V
C)
a
Continuous Drain Current
(T
J
= 150
I
D
A
L = 0 1 mH
Maximum Power Dissipation
a
P
D
W
Mi
R
Si4418DY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2
4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 200 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
A
V
DS
= 200 V, V
GS
= 0 V, T
J
= 85
C
20
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
12
A
V
GS
= 10
V, I
D
= 3 A
0.110
0.130
Drain-Source On-State Resistance
a
r
DS(on)
0.142
V
GS
= 6.0 V, I
D
= 2.8 A
0.120
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 3 A
13
S
Diode Forward Voltage
a
V
SD
I
S
= 2.1 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
20
30
Gate-Source Charge
Q
gs
V
DS
= 100 V,
V
GS
= 10 V, I
D
= 3 A
4.5
nC
Gate-Drain Charge
Q
gd
6.5
Gate Resistance
R
g
f = 1 MHz
1
2
3.4
Turn-On Delay Time
t
d(on)
15
25
Rise Time
t
r
V
DD
= 100 V, R
L
= 100
15
25
Turn-Off Delay Time
t
d(off)
I
D
1 A, V
GEN
= 10 V, R
G
= 6
40
60
ns
Fall Time
t
f
20
30
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, di/dt = 100 A/
s
70
110
2%.
b. Guaranteed by design, not subject to production testing.
300
s, duty cycle
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
12
12
10
V
GS
= 10 thru 6 V
10
8
5 V
8
6
6
T
C
= 125
C
4
4
2
2
25
C
4 V
−55
C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
Zero Gate Voltage Drain Current
I
DSS
A
Drain-Source On-State Resistance
a
r
DS(on)
V
DD
= 100 V, R
L
= 100
Notes
a. Pulse test; pulse width
New Product
Si4418DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.20
1600
1400
0.16
1200
V
GS
= 6.0 V
C
iss
0.12
1000
V
GS
= 10 V
800
0.08
600
400
0.04
C
rss
200
C
oss
0.00
0
0
2
4
6
8
10
12
0 00000000
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
2.5
V
DS
= 100 V
I
D
= 3 A
V
GS
= 10 V
I
D
= 3 A
8
2.0
6
1.5
4
1.0
2
0.5
0
0.0
0
4
8
12
16
20
−50 −25
0
25
50
75
100 125 150
Q
g
− Total Gate Charge (nC)
T
J
− Junction Temperature (
C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
0.20
0.16
T
J
= 150
C
I
D
= 3 A
10
0.12
0.08
T
J
= 25
C
0.04
1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
www.vishay.com
3
Si4418DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
50
0.6
0.4
40
0.2
I
D
= 250
A
−0.0
−0.2
30
−0.4
−0.6
20
−0.8
−1.0
10
−1.2
−1.4
−1.6
0
−50 −25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
− Temperature (
C)
Time (sec)
100
Safe Operating Area
I
DM
Limited
r
DS(on)
Limited
10
P(t) = 0.0001
1
P(t) = 0.001
I
D(on)
Limited
P(t) = 0.01
0.1
P(t) = 0.1
C
Single Pulse
P(t) = 1
P(t) = 10
dc
0.01
BV
DSS
Limited
0.001
0.1
1
10
100
1000
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
t
1
t
2
t
1
t
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 71
C/W
Single Pulse
3. T
JM
− T
A
= P
DM
Z
thJA
(t)
4. Surface Mounted
0.01
10
−4
10
−3
10
−2
10
−1
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
T
A
= 25
New Product
Si4418DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
www.vishay.com
5
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