IRF740.pdf

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IRF740
N-CHANNEL 400V - 0.46
- 10A TO-220
PowerMESH™II MOSFET
TYPE
V DSS
R DS(on)
I D
IRF740
400 V
< 0.55
10 A
TYPICAL R DS (on) = 0.46
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
VERY LOW INTRINSIC CAPACITANCES
2
3
1
TO-220
DESCRIPTION
The PowerMESH™II is the evolution of the first gen-
eration of MESH OVERLAY™. The layout refine-
ments introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DS
Drain-source Voltage (V GS = 0)
400
V
V DGR
Drain-gate Voltage (R GS = 20 k
)
400
V
V GS
Gate- source Voltage
± 20
V
I D
Drain Current (continuos) at T C = 25°C
10
A
I D
Drain Current (continuos) at T C = 100°C
6.3
A
I DM ( l )
Drain Current (pulsed)
40
A
P TOT
Total Dissipation at T C = 25°C
125
W
Derating Factor
1.0
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
4.0
V/ns
T stg
Storage Temperature
– 65 to 150
°C
T j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
(1)I SD
10A, di/dt
120A/µs, V DD
V (BR)DSS , T j
T JMAX.
June 2002
1/8
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IRF740
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
1
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
T l
Maximum Lead Temperature For Soldering Purpose
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
10
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 °C, I D = I AR , V DD = 50 V)
520
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V (BR)DSS
Drain-source
Breakdown Voltage
I D = 250 µA, V GS = 0
400
V
I DSS
Zero Gate Voltage
Drain Current (V GS = 0)
V DS = Max Rating
1
µA
V DS = Max Rating, T C = 125 °C
50
µA
I GSS
Gate-body Leakage
Current (V DS = 0)
V GS = ±20V
±100
nA
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250µA
2
3
4
V
R DS(on)
Static Drain-source On
Resistance
V GS = 10V, I D = 5.3 A
0.46
0.55
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g fs (1)
Forward Transconductance
V DS > I D(on) x R DS(on)max,
I D = 6 A
7
S
C iss
Input Capacitance
V DS = 25V, f = 1 MHz, V GS = 0
1259
pF
C oss
Output Capacitance
206
pF
C rss
Reverse Transfer
Capacitance
25.6
pF
2/8
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IRF740
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
Turn-on Delay Time
V DD = 200V, I D = 5 A
R G =4.7
17
ns
V GS = 10V
(see test circuit, Figure 3)
t r
Rise Time
10
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 320V, I D = 10.7 A,
V GS = 10V
35
11
12
43
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(off)
t f
t c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 320V, I D = 10 A
R G =4.7
10
10
17
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I SD
Source-drain Current
10
A
I SDM (2)
Source-drain Current (pulsed)
40
A
V SD (1)
Forward On Voltage
I SD = 10 A, V GS = 0
1.6
V
t rr
Q rr
I RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I SD = 10 A, di/dt = 100A/µs,
V DD = 100V, T j = 150°C
(see test circuit, Figure 5)
370
3.2
17
ns
C
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/8
V GS = 10V
(see test circuit, Figure 5)
11120685.001.png 11120685.002.png 11120685.003.png
IRF740
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
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IRF740
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
11120685.005.png

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