stp2n60_tranzystor.pdf
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STP2N60
STP2N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
V
DSS
R
DS(on)
I
D
STP2N60
STP2N60FI
600 V
600 V
<3.5
W
2.9 A
2.2 A
<3.5
W
n
TYPICAL R
DS(on)
= 3.2
W
AVALANCHE RUGGED TECHNOLOGY
n
n
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
n
3
APPLICATION ORIENTED
CHARACTERIZATION
3
n
2
2
1
1
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
TO-220
ISOWATT220
n
SWITCH MODE POWER SUPPLIES (SMPS)
n
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP2N60
STP2N60FI
V
DS
Drain-source Voltage (V
GS
=0)
600
V
V
DG R
Drain- gate Voltage (R
GS
=20k
W
)
600
V
V
GS
Gate-source Voltage
±
20
V
I
D
Drain Current (continuous) at T
c
=25
o
C
2.9
2.2
A
I
D
Drain Current (continuous) at T
c
=100
o
C
1.7
1.3
A
I
DM
(
•
) Drain Current (pulsed)
11
11
A
P
tot
Total Dissipation at T
c
=25
o
C
70
35
W
Derating Factor
0.56
0.28
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
'
2000
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
•
) Pulse width limited by safe operating area
December 1996
1/10
STP2N60/FI
THERMAL DATA
TO-220
ISOWATT220
R
thj-case
Thermal Resistance Junction-case
Max
1.78
3.57
o
C/W
R
thj-amb
R
t hc- sin k
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
2.9
A
d
<1%)
E
AS
Single Pulse Avalanche Energy
(starting T
j
=25
o
C, I
D
=I
AR
,V
DD
=50V)
105
mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
3.5
mJ
d
<1%)
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
1.7
A
o
C, pulse width limited by T
j
max,
d
<1%)
ELECTRICAL CHARACTERISTICS
(T
case
=25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
=250
A
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
=MaxRating
V
DS
= Max Rating x 0.8 T
c
=125
o
C
25
250
m
A
m
A
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
=
±
20 V
±
100
nA
ON (
*
)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
I
D
=250
m
A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
=10V I
D
= 1.5 A
3.2
3.5
W
I
D(on)
On State Drain Current V
DS
>I
D(on)
xR
DS(on)max
V
GS
=10V
2.9
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
g
fs
(
*
)
r rd
Transconductance
V
DS
>I
D(on)
xR
DS(on)max
I
D
=1.5A
1
2.4
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V f=1MHz V
GS
=0
450
62
23
600
85
35
pF
pF
pF
2/10
m
STP2N60/FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
GS
=10V
(see test circuit, figure 3)
W
25
110
40
150
ns
ns
(di/dt)
on
Turn-on Current Slope V
DD
=480V I
D
=2.9A
R
G
=50
75
A/
m
s
V
GS
=10V
(see test circuit, figure 5)
W
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V I
D
=2.9A V
GS
=10V
33
7
13
45
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
GS
=10V
(see test circuit, figure 5)
W
70
20
100
95
30
130
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
I
SD
I
SD M
(
•
)
Source-drain Current
Source-drain Current
(pulsed)
2.9
11
A
A
V
SD
(
*
) Forward On Voltage
I
SD
=2.9A V
GS
=0
2
V
t
rr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
=2.9A di/dt=100A/
m
s
500
ns
V
DD
=80V T
j
=150
o
C
(see test circuit, figure 5)
Q
rr
7
m
C
I
RRM
28
A
(
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
V
DD
=35V I
D
=2A
R
G
=50
V
DD
=480V I
D
=2.9A
R
G
=50
STP2N60/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
4/10
STP2N60/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
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