BDT61x.pdf
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BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDT60, BDT60A, BDT60B and BDT60C
●
TO-220 PACKAGE
(TOP VIEW)
50 W at 25°C Case Temperature
●
4 A Continuous Collector Current
●
B
1
Minimum h
FE
of 750 at 1.5 V, 3 A
●
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BDT61
BDT61A
BDT61B
BDT61C
60
80
100
120
Collector-base voltage (I
E
= 0)
V
CBO
V
BDT61
BDT61A
BDT61B
BDT61C
60
80
100
120
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
4
A
Continuous base current
I
B
0.1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
P
tot
50
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
P
tot
2
W
Operating junction temperature range
T
j
-65 to +150
°C
Storage temperature range
T
stg
-65 to +150
°C
Operating free-air temperature range
T
A
-65 to +150
°C
NOTES: 1.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BDT61
BDT61A
BDT61B
BDT61C
60
80
100
120
Collector-emitter
breakdown voltage
V
(BR)CEO
I
C
= 30 mA
I
B
= 0
(see Note 3)
V
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
I
B
=0
I
B
=0
I
B
=0
I
B
=0
BDT61
BDT61A
BDT61B
BDT61C
0.5
0.5
0.5
0.5
Collector-emitter
cut-off current
I
CEO
mA
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 30 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
BDT61
BDT61A
BDT61B
BDT61C
BDT61
BDT61A
BDT61B
BDT61C
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
Collector cut-off
current
I
CBO
mA
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
Emitter cut-off
current
I
EBO
V
EB
= 5 V
I
C
=0
5
mA
Forward current
transfer ratio
h
FE
V
CE
= 3 V
I
C
= 1.5 A
(see Notes 3 and 4)
750
Collector-emitter
saturation voltage
V
CE(sat)
I
B
= 6 mA
I
C
= 1.5 A
(see Notes 3 and 4)
2.5
V
Base-emitter
voltage
V
BE(on)
V
CE
= 3 V
I
C
= 1.5 A
(see Notes 3 and 4)
2.5
V
Parallel diode
forward voltage
V
EC
I
E
= 1.5 A
I
B
= 0
2
V
NOTES: 3.
These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4.
These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
Junction to case thermal resistance
2.5
°C/W
θ
JC
R
θ
Junction to free air thermal resistance
62.5
°C/W
JA
resistive-load-switching characteristics at 25°C case temperature
TEST CONDITIONS
†
PARAMETER
MIN
TYP
MAX
UNIT
t
on
Tu r n - o n t i m e
I
C
= 2 A
V
BE(off)
= -5 V
I
B(on)
= 8 mA
R
L
= 20
I
B(off)
= -8 mA
t
p
= 20
1
µs
t
off
Turn-off time
Ω
µ
s, dc
≤
2%
4.5
µs
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
2
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AD
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS110AB
20000
2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
10000
1·5
1·0
1000
0·5
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
V
CE
= 3 V
t
p
= 300 µs, duty cycle < 2%
100
0
0·5
1·0
5·0
0·5
1·0
5·0
I
C
- Collector Current - A
I
C
- Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AC
3·0
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
2·5
2·0
1·5
1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
0·5
0·5
1·0
5·0
I
C
- Collector Current - A
Figure 3.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS110AB
10
1·0
0·1
BDT61
BDT61A
BDT61B
BDT61C
0.01
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AA
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
4
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