BT139.PDF

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11011193 UNPDF
Philips Semiconductors
Product specification
Triacs
BT139 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
envelope, intended for use in
applications
requiring
high
BT139- 500
600
800
bidirectional transient and blocking
BT139- 500F 600F 800F
voltage capability and high thermal
BT139- 500G 600G 800G
cycling
performance.
Typical
V DRM
Repetitive peak off-state
500
600
800
V
applications include motor control,
voltages
industrial and domestic lighting,
I T(RMS)
RMS on-state current
16
16
16
A
heating and static switching.
I TSM
Non-repetitive peak on-state
140
140
140
A
current
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
1
main terminal 1
T2
T1
2
main terminal 2
3
gate
tab main terminal 2
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500 -600 -800
V DRM
Repetitive peak off-state
-
500 1
600 1
800
V
voltages
I T(RMS)
RMS on-state current
full sine wave; T mb
£
99 ˚C
-
16
A
I TSM
Non-repetitive peak
full sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 20 ms
-
140
A
t = 16.7 ms
-
150
A
I 2 t
I 2 t for fusing
t = 10 ms
-
98
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 20 A; I G = 0.2 A;
on-state current after
dI G /dt = 0.2 A/
m
s
triggering
T2+ G+
-
50
A/
m
s
T2+ G-
-
50
A/
m
s
T2- G-
-
50
A/
m
s
T2- G+
-
10
A/
m
s
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
m
s.
September 1997
1
Rev 1.200
11011193.006.png
Philips Semiconductors
Product specification
Triacs
BT139 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance
full cycle
-
-
1.2
K/W
junction to mounting base half cycle
-
-
1.7
K/W
R th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT139-
...
...F
...G
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
T2+ G+
-
5
35
25
50
mA
T2+ G-
-
8
35
25
50
mA
T2- G-
-
10
35
25
50
mA
T2- G+
-
22
70
70
100
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
T2+ G+
-
7
40
40
60
mA
T2+ G-
-
20
60
60
90
mA
T2- G-
-
8
40
40
60
mA
T2- G+
-
10
60
60
90
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
6
30
30
60
mA
V T
On-state voltage
I T = 20 A
-
1.2
1.6
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.7
1.5
V
V D = 400 V; I T = 0.1 A;
0.25
0.4
-
V
T j = 125 ˚C
I D
Off-state leakage current V D = V DRM(max) ;
-
0.1
0.5
mA
T j = 125 ˚C
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT139-
...
...F
...G
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ;
100
50
200
250
-
V/
m
s
off-state voltage
T j = 125 ˚C; exponential
waveform; gate open
circuit
dV com /dt
Critical rate of change of V DM = 400 V; T j = 95 ˚C;
-
-
10
20
-
V/
m
s
commutating voltage
I T(RMS) = 16 A;
dI com /dt = 7.2 A/ms; gate
open circuit
t gt
Gate controlled turn-on
I TM = 20 A; V D = V DRM(max) ;
-
-
-
2 -
m
s
time
I G = 0.1 A; dI G /dt = 5 A/
m
s
September 1997
2
Rev 1.200
11011193.007.png 11011193.008.png 11011193.009.png
Philips Semiconductors
Product specification
Triacs
BT139 series
25
Ptot / W
BT139
Tmb(max) / C
95
20
IT(RMS) / A
BT139
= 180
99 C
20
101
15
120
90
60
30
1
15
107
10
10
113
5
119
5
0
0
5
10
15
20
125
0
-50
0
50
100
150
IT(RMS) / A
Tmb / C
Fig.1. Maximum on-state dissipation, P tot , versus rms
on-state current, I T(RMS) , where
a
= conduction angle.
Fig.4. Maximum permissible rms current I T(RMS) ,
versus mounting base temperature T mb .
1000
ITSM / A
BT139
50
IT(RMS) / A
BT139
40
30
100
dI /dt limit
T
20
T2- G+ quadrant
I
T
I TSM
10
T
time
Tj initial = 25 C max
10
10us
100us
1ms
10ms
100ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T mb
£
99˚C.
150
ITSM / A
BT139
VGT(Tj)
VGT(25 C)
BT136
1.6
I TSM
I
T
T
time
1.4
100
Tj initial = 25 C max
1.2
1
50
0.8
0.6
0
1
10
100
1000
0.4
-50
0
50
100
150
Number of cycles at 50Hz
Tj / C
Fig.3. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
September 1997
3
Rev 1.200
0
11011193.001.png
Philips Semiconductors
Product specification
Triacs
BT139 series
IGT(Tj)
IGT(25 C)
50
IT / A
Tj = 125 C
Tj = 25 C
BT139
BT139
3
T2+ G+
T2+ G-
T2- G-
T2- G+
typ
max
40
2.5
Vo = 1.195 V
Rs = 0.018 Ohms
2
30
1.5
20
1
0.5
10
0
-50
0
50
100
150
0
0
0.5
1
1.5
2
2.5
3
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
10
Zth j-mb (K/W)
BT139
TRIAC
3
2.5
1
unidirectional
2
bidirectional
1.5
0.1
1
P
t p
0.01
0.5
t
0
-50
0
50
100
150
0.001
10us
0.1ms
1ms
10ms
0.1s
1s
10s
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-mb , versus
pulse width t p .
IH(Tj)
IH(25C)
1000
dV/dt (V/us)
TRIAC
3
off-state dV/dt limit
BT139...G SERIES
2.5
BT139 SERIES
BT139...F SERIES
2
100
1.5
dIcom/dt =
20 A/ms 16
12
9.3
7.2
5.6
10
1
0.5
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI T /dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI T /dt.
September 1997
4
Rev 1.200
D
11011193.002.png
Philips Semiconductors
Product specification
Triacs
BT139 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
(2x )
123
0,9 max (3x)
0,6
2,54 2,54
2,4
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
11011193.003.png 11011193.004.png 11011193.005.png

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