toshiba igbt.pdf

Discrete IGBTs

PRODUCT GUIDE

Features and Structure

IGBT: I nsulated G ate B ipolar T ransistor

MOSFET-like high input impedance characteristics enable voltage drive

With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require

low-saturation voltage, high-withstanding voltage and high current

Low carrier accumulation, excellent frequency and switching characteristics, suitable for use in high-

current amplification

Features

Rated at 1500 V and 80 A, Toshiba discrete IGBTs are excellent as power converters in such diverse

applications as motor drives, uninterruptible power supply (UPS) units and induction heaters.

Some features of Toshiba IGBTs are:

(1) High switching speed

(2) Low-saturation voltage

(3) Built-in diode with optimal characteristics

(4) High input impedance characteristics enable voltage drive

(5) A variety of package types is available

Construction

Basic structure (planar N-channel) consists of four layers (PNPN), as shown in the following figure.

Low-saturation voltage is achieved by using the PNP transistor to modulate conductivity.

Unlike a MOSFET, a four-layer transistor does not incorporate a reverse-conducting diode, since the P-layer

forms the collector electrode.

Structure

Equivalent Circuit

Emitter

Collector

Electrode

Gate

N +

P +

N –

I IGBT

Gate

N +

Coll e ctor

Collecto r

P +

I MOS

Emitter

Collector

R N- (MOD)

Gate

P +

N +

P +

N +

P +

N N

Emitter

N +

C o ll e c t o r M E T A L

P +

IGBT Engineering Advances

Power MOSFETs have long provided

both high-speed and high-input

impedance. However, various

disadvantages such as increased

resistance with increased breakdown

voltage, as well as difficulties handling

high breakdown voltages and high

currents, are also associated with

MOSFETs.

The cross-section of the IGBT on the

previous page shows how IGBT

resistance is reduced by injecting holes

into the N – layer from the P + substrate

collector to change the conductivity.

Gate Process

Plane

Trench

Generation

2.5th generation 3rd generation

(4th generation)

Emitter

Gate

Emitter

Gate

N +

P +

Structure

N -

N +

P +

N +

P +

Collector

V CE(sat) (@600 V)

2.5 V typ.

1.00

2.1 V typ.

0.43

0.75

(1.6 V typ.)

0.06

–

~900 V

1200 V

Cell Size

Toshiba have miniaturized unit cells and

optimized wafers to decrease V CE(sat)

switching loss. The following data

demonstrates the progress made thus

far:

Trade-Off Characteristics Evolution (V CES = 900 V type)

3.4

Changes in

Chip Size

2.5th Generation (GT60M104)

3.2

100

2.5th-generation IGBTs (V CE(sat) = 2.5 V Type)

3rd-generation IGBTs (V CE(sat) = 2.3 V Type)

2.8

3rd Generation (GT60M301)

Trench IGBTs (V CE(sat) = 2.1 V Type)

2.6

In addition to wafer optimization,

Toshiba are applying trench gater

technology and developing improved

lifetime control to optimize the V CE(sat)

versus switching speed trade-off.

2.4

2.2

4th Generation (GT60M303)

1.8

0.12

0.2

0.28

0.36

0.44

0.52

t f (

Discrete IGBT development trends

(1) Third generation (standard): low V CE(sat) and high ruggedness due to optimized carrier injection and reduced wafer thickness

(1) Soft switching: reduced trade-off between V CE(sat) and t f due to adoption of trench gate

(1) Third generation (standard): low V CE(sat) and high ruggedness due to miniaturization (up to 20 kHz).

(2) Fast switching (FS): trench gate and carrier injection optimization (up to 50 kHz)

(3) Ultra fast switching (UFS): trench gate, new wafer and new lifetime control (up to 150 kHz)

(4) Soft switching: reduced trade-off between V CE(sat) and tf due to adoption of trench gate

1998

2000

2002

Discrete IGBT Line-up

SOP-8

straight

leads

TO-220NIS

TO-220FL TO-220SM TO-220AB

TO-3P(N)

TO-3P(IS) TO-3P(SM) TO-3P(LH)

formed

leads

Withstanding

Voltage

V CES(V)

@Tc = 25

IGBT Current Rating

Ic(A)@Tc = 25

Applications and

Features

Pulse

Strobe flash

One-shot flash

400

150

130

150

170

150

100

120

GT8G131

GT5G102

GT5G103

GT8G103

GT8G121

GT25G101

GT25G102

GT25G101

GT25G102

Resonance switching

Soft switching

400

GT40G121

GT50G321

600

GT30J322

GT50J322

GT60J321

GT60J322

GT80J101A

Soft switching

series

160

120

900

GT15M321

GT40M101

GT60M302

GT60M303

GT60N321

GT40T301

GT40T102

1000

1500

120

General-purpose

motors

General-purpose

inverters

Hard switching

Operating frequencies

up to 20 kHz

600

GT5J301

GT10J303

GT15J301

GT5J311

GT10J312

GT15J311

GT10J301

GT10J311

GT20J301

GT20J101

GT30J301

GT30J101

GT20J311

GT30J311

100

GT50J301

GT50J102

High rugged

products

1200

GT10Q301

GT10Q101

GT15Q301

GT15Q102

GT15Q311

GT25Q301

GT25Q102

General-purpose

inverters

Fast switching

Hard switching

Operating frequencies

up to 50 kHz

600

GT5J121

GT5J321

GT10J321

GT15J321

GT20J321

GT30J324

GT30J121

100

GT50J325

GT50J121

FS series

General-purpose inverters

for low-V CE(sat) products

Audio amplifiers

600

GT15J331

250

-250

-20

-60

GT20D101

GT20D102

Product Number Format

GT 60 M 3 03 A

Table 1

(Example)

Mark

Voltage (V)

Mark

Voltage (V)

Version

150

900

Type number

1: N-channel

2: P-channel

200

1000

250

1100

3: N-channel with built-in

freewheel diode

300

1200

400

1300

Withstand voltage rating (see Table 1)

Collector current rating (DC)

Discrete IGBT

500

1400

600

1500

700

1600

800

1700

Characteristics

1. Industrial Inverters

The addition of the fast switching (FS) series to the third-generation devices (high ruggedness)

allows the construction of more efficient electronic equipment.

General-Purpose Inverters

Inverter Air Conditioners

Inverter Washing Maschines

UPS

P L

Rectifier circuit

Inverter

Output

Input

Control

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