bas28.pdf

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199613085 UNPDF
Silicon Switching Diode Array
BAS 28
l
For high-speed switching
l
Electrically insulated diodes
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
Package 1)
BAS 28
JTs
Q62702-A77
SOT-143
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V R
75
V
Peak reverse voltage
V RM
85
Forward current
I F
200
mA
Surge forward current, t = 1 m s
I FS
4.5
A
Total power dissipation, T S =31˚C
P tot
330
mW
Junction temperature
T j
150
˚C
Storage temperature range
T stg
– 65 … + 150
Thermal Resistance
Junction - ambient 2)
R th JA
£ 500
K/W
Junction - soldering point
R th JS
£ 360
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm ´ 40 mm ´ 1.5 mm/6 cm 2 Cu.
Semiconductor Group
1
5.91
199613085.002.png 199613085.003.png
BAS 28
Electrical Characteristics
at T A = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ.
max.
DC characteristics
Breakdown voltage
I (BR) = 100 m A
V (BR)
85
–
–
V
Forward voltage
I F = 1mA
I F = 10 mA
I F = 50 mA
I F = 150 mA
V F
mV
–
–
–
–
–
–
–
–
715
855
1000
1250
Reverse current
V R = 75 V
V R = 25 V, T A = 150 ˚C
V R = 75 V, T A = 150 ˚C
I R
m A
–
–
–
–
–
–
1
30
50
AC characteristics
Diode capacitance
V R = 0 V, f = 1 MHz
C D
–
–
2
pF
Reverse recovery time
I F = 10 mA, I R = 10 mA, R L = 100
t rr
–
–
6
ns
W
measured at I R = 1 mA
Test circuit for reverse recovery time
Pulse generator: t p = 100 ns, D = 0.05
Oscillograph: R = 50
W
t r = 0.6 ns, R j = 50
W
t r = 0.35 ns
C £ 1pF
Semiconductor Group
2
199613085.004.png
BAS 28
Forward current I F = f ( T A *; T S )
* Package mounted on epoxy
Reverse current I R = f ( T A )
Forward current I F = f ( V F )
T A = 25 ˚C
Peak forward current I FM = f ( t )
T A = 25 ˚C
Semiconductor Group
3
199613085.005.png
BAS 28
Forward voltage V F = f ( T A )
Semiconductor Group
4
199613085.001.png

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