bfr93a.pdf

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BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Wide band amplifier up to GHz range.
Features
High power gain
High transition frequency
Low noise figure
1
1
13 581
13 581
94 9280
9510527
2
3
3
2
BFR93A Marking: +R2
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
BFR93AR Marking: +R5
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
1
13 652
13 570
2
3
BFR93AW Marking: WR2
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T amb = 25 C, unless otherwise specifie d
Parameter
Test Conditions
Symbol
Value
Unit
Collector-base voltage
V CBO
20
V
Collector-emitter voltage
V CEO
12
V
Emitter-base voltage
V EBO
2
V
Collector current
I C
50
mA
Total power dissipation
T amb
3
60 C
P tot
200
mW
Junction temperature
T j
150
C
Storage temperature range
T stg
–65 to +150 C
Document Number 85035
www.vishay.com
Rev. 3, 20-Jan-99
1 (9)
199616947.014.png 199616947.015.png 199616947.016.png 199616947.017.png 199616947.001.png
 
BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
Maximum Thermal Resistance
T amb = 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3
plated with 35 m Cu
R thJA
450
K/W
Electrical DC Characteristics
T amb = 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Collector cut-off current
V CE = 20 V, V BE = 0
I CES
100 A
Collector-base cut-off current
V CB = 10 V, I E = 0
I CBO
100 nA
Emitter-base cut-off current
V EB = 2 V, I C = 0
I EBO
10 A
Collector-emitter breakdown voltage I C = 1 mA, I B = 0
V (BR)CEO 12
V
Collector-emitter saturation voltage I C = 50 mA, I B = 5 mA
V CEsat
0.1 0.4 V
DC forward current transfer ratio
V CE = 5 V, I C = 30 mA
h FE
40 90 150
Electrical AC Characteristics
T amb = 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Transition frequency
V CE = 5 V, I C = 30 mA, f = 500 MHz
f T
6
GHz
Collector-base capacitance
V CB = 10 V, f = 1 MHz
C cb
0.45
pF
Collector-emitter capacitance V CE = 5 V, f = 1 MHz
C ce
0.2
pF
Emitter-base capacitance
V EB = 0.5 V, f = 1 MHz
C eb
1.5
pF
Noise figure
V CE = 8 V, Z S = 50 , f = 800 MHz,
I C = 5 mA
F
1.6
dB
V CE = 8 V, Z S = 50 , f = 800 MHz,
I C = 25 mA
F
2.1
dB
Power gain
V CE = 8 V, I C = 25 mA, Z S = 50 ,
Z L = Z Lopt , f = 800 MHz
G pe
14
dB
Linear output voltage – two
tone intermodulation test
V CE = 8 V, I C = 25 mA, d IM = 60 dB,
f 1 = 806 MHz, f 2 = 810 MHz,
Z S = Z L = 50
V 1 = V 2
260
mV
Third order intercept point
V CE = 8 V, I C = 25 mA, f = 800 MHz
IP 3
31
dBm
www.vishay.com
Document Number 85035
2 (9)
Rev. 3, 20-Jan-99
199616947.002.png 199616947.003.png 199616947.004.png
BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
Common Emitter S–Parameters
Z 0 = 50 T amb = 25 C, unless otherwise specified
S11
S21
S12
S22
V CE /V I C /mA
f/MHz
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
deg
deg
deg
deg
100
0.811
–33.9
12.66
152.2
0.028
72.8
0.914
–15.0
300
0.530
–83.4
8.32
117.3
0.058
57.8
0.661
–27.4
500
0.370 –116.3
5.67
99.8
0.075
56.7
0.537
–26.9
800
0.274 –149.7
3.77
85.0
0.099
59.8
0.487
–23.8
5
1000
0.256 –165.5
3.11
77.8
0.117
61.8
0.485
–24.2
1200
0.255 –178.6
2.67
71.1
0.135
62.6
0.481
–26.8
1500
0.277
162.7
2.21
62.1
0.163
63.3
0.466
–31.3
1800
0.294
146.0
1.91
54.0
0.194
63.3
0.455
–35.0
2000
0.312
136.2
1.76
49.4
0.215
62.7
0.454
–38.4
100
0.676
–44.9
19.22
142.3
0.025
69.9
0.832
–21.0
300
0.377
–97.1
10.24
108.0
0.050
62.8
0.539
–29.0
500
0.259 –131.0
6.59
93.8
0.071
64.8
0.441
–25.0
800
0.197 –164.2
4.26
81.6
0.102
66.9
0.415
–20.4
8
10
1000
0.189 –178.0
3.48
75.4
0.124
67.2
0.423
–21.1
1200
0.195
169.8
2.98
69.5
0.147
66.7
0.424
–24.2
1500
0.222
155.6
2.46
61.4
0.179
65.4
0.409
–29.0
1800
0.245
140.0
2.12
54.1
0.212
63.6
0.398
–32.6
2000
0.263
131.3
1.95
49.9
0.235
62.0
0.397
–36.2
100
0.597
–52.0
22.81
136.3
0.023
69.3
0.774
–23.9
300
0.306 –105.2
10.94
103.8
0.047
66.5
0.484
–28.5
500
0.219 –139.3
6.91
91.3
0.070
68.4
0.405
–23.3
800
0.172 –172.8
4.45
80.0
0.104
69.5
0.390
–18.3
15
1000
0.165
174.6
3.62
74.3
0.128
69.0
0.401
–19.4
1200
0.174
164.9
3.09
68.8
0.151
68.1
0.403
–22.7
1500
0.201
152.9
2.54
61.0
0.185
66.0
0.388
–27.8
1800
0.226
137.5
2.19
53.9
0.219
63.8
0.377
–31.4
2000
0.245
128.5
2.01
49.7
0.243
61.8
0.375
–35.3
Document Number 85035
www.vishay.com
Rev. 3, 20-Jan-99
3 (9)
199616947.005.png 199616947.006.png
BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
S11
S21
S12
S22
V CE /V I C /mA
f/MHz
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
deg
deg
deg
deg
100
0.540
–56.8
24.86
132.3
0.022
68.6
0.732
–25.5
300
0.274 –110.3
11.22
101.5
0.046
68.6
0.455
–27.6
500
0.199 –144.7
7.03
89.8
0.070
70.5
0.387
–21.9
800
0.164 –177.3
4.49
79.2
0.105
70.9
0.380
–16.9
20
1000
0.160
171.1
3.66
73.5
0.130
70.1
0.391
–18.2
1200
0.166
162.3
3.13
68.2
0.153
68.6
0.393
–21.8
1500
0.197
151.6
2.58
60.5
0.188
66.2
0.378
–27.1
1800
0.223
135.8
2.21
53.7
0.222
63.8
0.367
–30.9
8
2000
0.242
128.2
2.04
49.5
0.246
61.8
0.365
–34.7
8
100
0.502
–61.1
26.06
129.3
0.021
68.7
0.702
–26.4
300
0.254 –114.6
11.32
99.8
0.045
69.6
0.438
–26.5
500
0.191 –148.9
7.05
88.8
0.070
71.5
0.378
–20.6
800
0.162
178.0
4.51
78.5
0.106
71.5
0.374
–16.0
25
1000
0.158
167.6
3.66
73.0
0.131
70.5
0.387
–17.5
1200
0.163
159.3
3.13
67.6
0.154
69.0
0.389
–21.2
1500
0.200
149.0
2.57
60.1
0.190
66.4
0.374
–26.6
1800
0.220
134.7
2.21
53.2
0.224
63.8
0.364
–30.5
2000
0.243
128.4
2.04
48.9
0.248
61.7
0.361
–34.4
www.vishay.com
Document Number 85035
4 (9)
Rev. 3, 20-Jan-99
199616947.007.png 199616947.008.png 199616947.009.png 199616947.010.png
BFR93A/BFR93AR/BFR93AW
Vishay Semiconductors
Typical Characteristics (T amb = 25 C unless otherwise specified)
300
1.0
250
0.8
200
0.6
150
0.4
100
50
0.2
f=1MHz
0
0
0
20 40 60 80 100 120 140 160
T amb – Ambient Temperature ( °C )
0
4
8
12
16
20
96 12159
13591
V CB – Collector Base Voltage ( V )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
7000
3.5
6000
3.0
5000
2.5
4000
2.0
3000
1.5
2000
1.0
V CE =8V
f=800MHz
Z S =50
1000
V CE =5V
f=500MHz
0.5
0
0
0
8
16
24
32
40
0
5
10
15
20
25
30
13590
I C – Collector Current ( mA )
12897
I C – Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Figure 4. Noise Figure vs. Collector Current
Document Number 85035
www.vishay.com
Rev. 3, 20-Jan-99
5 (9)
199616947.011.png 199616947.012.png 199616947.013.png

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