2SC5270.pdf
(
35 KB
)
Pobierz
2SC5270_E
Power Transistors
2SC5270, 2SC5270A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5
±
0.5
3.0
±
0.3
n
Features
f
3.2
±
0.1
l
High breakdown voltage, and high reliability through the use of a
glass passivation layer
5
°
5
°
l
High-speed switching
l
Wide area of safe operation (ASO)
5
°
5
°
4.0
5
°
2.0
±
0.2
n
Absolute Maximum Ratings
(T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
1.1
±
0.1
0.7
±
0.1
Symbol
Ratings
1500
1600
1500
1600
600
5
20
12
8
120
3
150
–55 to +150
Unit
2SC5270
2SC5270A
2SC5270
2SC5270A
5.45
±
0.3
5.45
±
0.3
V
CBO
V
5
°
V
CES
V
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
V
CEO
V
EBO
I
CP
I
C
I
B
V
V
A
A
A
T
C
=25°C
Ta=25°C
P
C
W
T
j
T
stg
˚C
˚C
n
Electrical Characteristics
(T
C
=25˚C)
Parameter
Symbol
Conditions
min
typ
max
50
50
1
1
50
12
3
1.5
Unit
Collector cutoff
current
2SC5270
2SC5270A
2SC5270
2SC5270A
V
CB
= 1000V, I
E
= 0
mA
I
CBO
V
CB
= 1500V, I
E
= 0
V
CB
= 1600V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 6A
I
C
= 6A, I
B
= 1.5A
I
C
= 6A, I
B
= 1.5A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
mA
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
mA
5
V
V
MHz
ms
ms
3
1.5
0.12
I
C
= 6A, I
B1
= 1.5A, I
B2
= –3A
2.5
0.2
1
Power Transistors
2SC5270, 2SC5270A
P
C
—Ta
h
FE
—I
C
V
CE(sat)
—I
C
140
10
2
5000
(1) T
C
=Ta
(2) With a 100
´
100
´
2mm
Al heat sink.
(3) Without heat sink
(P
C
=3.0W)
V
CE
=5V
I
C
/I
B
=4
(1)
120
T
C
=100˚C
4000
100
25˚C
80
–25˚C
3000
10
60
2000
T
C
=100˚C
25˚C
–25˚C
40
1000
20
(2)
(3)
0
1
0
0
20
40
60
80
100
120
140
160
1
10
10
2
10
3
10
4
10
5
10
2
10
3
10
4
10
5
Ambient temperature Ta
(
˚C
)
Collector current I
C
(
mA
)
Collector current I
C
(
mA
)
Area of safe operation (ASO)
Area of safe operation, horizontal operation ASO
t
f
—I
B
100
50
1.0
f=64kHz, T
C
<90˚C
Area of safe operation with
respect to the single pulse
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
I
CP
100ms
10ms
T
C
=25˚C
I
C
=6A
fH=64kHz
t=100
µ
s
0.6
1ms
10
I
C
40
0.8
0.7
1
DC
30
0.6
0.5
0.1
20
0.4
0.3
0.01
10
0.2
Non repetitive pulse
T
C
=25˚C
0.1
0.001
0
<1mA
0
1
3
10
30
100
300
1000
0
500
1000
1500
2000
0
1
2
3
4
5
Collector to emitter voltage V
CE
(V)
Collector to emitter voltage V
CE
(V)
End-of-scan current I
B end
(A)
t
stg
—I
B
10
9
T
C
=25˚C
I
C
=6A
fH=64kHz
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
End-of-scan current I
B end
(
A
)
2
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