BC516.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC516
PNP Darlington transistor
Product specication
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 16
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Philips Semiconductors
Product specication
PNP Darlington transistor
BC516
FEATURES
PINNING
·
High current (max. 500 mA)
PIN
DESCRIPTION
·
Low voltage (max. 30 V)
1
emitter
·
Very high DC current gain (min. 30000).
2
base
3
collector
APPLICATIONS
·
Where very high amplification is required.
handbook, halfpage
2
3
DESCRIPTION
1
2
3
TR1
PNP Darlington transistor in a TO-92; SOT54 plastic
package. NPN complement: BC517.
TR2
1
MAM303
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V CBO
collector-base voltage
open emitter
-
-
-
40
V
V CES
collector-emitter voltage
V BE =0
-
-
-
30
V
I C
collector current (DC)
-
-
- 500
mA
P tot
total power dissipation
T amb £
25
°
C
-
-
500
mW
h FE
DC current gain
I C =
-
20 mA; V CE =
-
2 V
30000
-
-
f T
transition frequency
I C =
-
30 mA; V CE =
-
5 V; f = 100 MHz
-
220
-
MHz
1997 Apr 16
2
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Philips Semiconductors
Product specication
PNP Darlington transistor
BC516
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage (open emitter) open emitter
-
-
40
V
V CES
collector-emitter voltage
V BE =0
-
-
30
V
V EBO
emitter-base voltage
open collector
-
- 10
V
I C
collector current (DC)
-
-
500
mA
I CM
peak collector current
-
-
800
mA
I B
base current (DC)
-
-
100
mA
P tot
total power dissipation
T amb £ 25 ° C; note 1
-
500
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
250
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T j =25
C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB = - 30 V
-
-
- 100 nA
I EBO
emitter cut-off current
I C = 0; V EB =
-
10 V
-
-
-
100 nA
h FE
DC current gain
I C =
-
20 mA; V CE =
-
2 V; see Fig.2
30000
-
-
CEsat
collector-emitter saturation voltage I C =
-
100 mA; I B =
-
0.1 mA
-
-
-
1
V
BEsat
base-emitter saturation voltage
I C = - 100 mA; I B = - 0.1 mA
-
-
- 1.5 V
V BEon
base-emitter on-state voltage
I C =
-
10 mA; V CE =
-
5V
-
-
-
1.4 V
f T
transition frequency
I C =
-
30 mA; V CE =
-
5 V; f = 100 MHz
-
220
-
MHz
1997 Apr 16
3
°
11067672.003.png
Philips Semiconductors
Product specication
PNP Darlington transistor
BC516
MGD836
100000
handbook, full pagewidth
h FE
80000
60000
40000
20000
0
- 10 2
- 10 3
- 1
- 10
I C (mA)
V CE =
-
2V.
Fig.2 DC current gain; typical values.
1997 Apr 16
4
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Philips Semiconductors
Product specication
PNP Darlington transistor
BC516
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e 1
D
e
3
b 1
L 1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b 1
0.66
0.56
c
D
d
E
e
e 1
L
L 1 (1)
mm
5.2
5.0
0.48
0.40
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT54
TO-92
SC-43
97-02-28
1997 Apr 16
5
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