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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
BC859W; BC860W
PNP general purpose transistors
Product specification
Supersedes data of 1997 Jul 01
File under Discrete Semiconductors, SC04
1997 Sep 03
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Philips Semiconductors
Product specification
PNP general purpose transistors
BC859W; BC860W
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
Low voltage (max. 45 V).
1
base
2
emitter
APPLICATIONS
3
collector
·
Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
handbook, halfpage
3
3
1
MARKING
2
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
1
2
Top view
BC859W
4Dt
BC860W
4Ht
MAM048
BC859AW
4At
BC860AW
4Et
BC859BW
4Bt
BC860BW
4Ft
Fig.1 Simplified outline (SOT323) and symbol.
BC859CW
4Ct
BC860CW
4Gt
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC859W
-
-
30
V
BC860W
-
-
50
V
V CEO
collector-emitter voltage
open base
BC859W
-
- 30
V
BC860W
-
- 45
V
I CM
peak collector current
-
-
200
mA
P tot
total power dissipation
T amb £
25
°
C
-
200
mW
h FE
DC current gain
I C = - 2 mA; V CE = - 5 V
125
800
f T
transition frequency
I C =
-
10 mA; V CE =
-
5 V; f = 100 MHz 100
-
MHz
1997 Sep 03
2
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Philips Semiconductors
Product specification
PNP general purpose transistors
BC859W; BC860W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC859W
-
-
30
V
BC860W
-
- 50
V
V CEO
collector-emitter voltage
open base
BC859W
-
-
30
V
BC860W
-
-
45
V
V EBO
emitter-base voltage
open collector
-
- 5
V
I C
collector current (DC)
-
-
100
mA
I CM
peak collector current
-
-
200
mA
I BM
peak base current
-
-
200
mA
P tot
total power dissipation
T amb £ 25 ° C; note 1
-
200
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Sep 03
3
11066910.030.png
Philips Semiconductors
Product specification
PNP general purpose transistors
BC859W; BC860W
CHARACTERISTICS
T amb =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =
-
30 V
-
-
-
15
nA
I E = 0; V CB = - 30 V; T j = 150 ° C
-
-
- 4
m A
I EBO
emitter cut-off current
I C = 0; V EB =
-
5V
-
-
-
100 nA
h FE
DC current gain
I C =
-
2 mA; V CE =
-
5V;
see Figs 2, 3 and 4
BC859W; BC860W
125
-
800
BC859AW; BC860AW
125
-
250
BC859BW; BC860BW
220
-
475
BC859CW; BC860CW
420
-
800
V CEsat
collector-emitter saturation voltage I C =
-
10 mA; I B =
-
0.5 mA
-
-
-
300 mV
I C = - 100 mA; I B = - 5 mA; note 1
-
-
- 650 mV
V BE
base-emitter voltage
I C =
-
2 mA; V CE =
-
5 V
600
-
750
mV
I C =
-
10 mA; V CE =
-
5V
-
-
820
mV
C c
collector capacitance
I E =i e = 0; V CB =
-
10 V; f = 1 MHz
-
-
5
pF
C e
emitter capacitance
I C =i c = 0; V EB = - 500 mV; f = 1 MHz
-
10
-
pF
f T
transition frequency
I C =
-
10 mA; V CE =
-
5V;
100
-
-
MHz
f = 100 MHz
F
noise figure
BC859W; BC860W
BC859AW; BC860AW
I C = - 200 m A; V CE = - 5V;
R S =2k W; f = 10 Hz to 15.7 kHz
-
-
10
dB
I C =
-
200
m
A; V CE =
-
5V;
-
-
10
dB
R S =2k
W
; f = 1 kHz; B = 200 Hz
F
noise figure
BC859BW; BC860BW
BC859CW; BC860CW
I C = - 200 m A; V CE = - 5V;
R S =2k
-
-
4
dB
W;
f = 10 Hz to 15.7 kHz
I C =
-
200
m
A; V CE =
-
5V;
-
-
4
dB
R S =2k
W
; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t p £
300
m
s;
d£
0.02.
1997 Sep 03
4
11066910.031.png
Philips Semiconductors
Product specification
PNP general purpose transistors
BC859W; BC860W
MBH726
300
handbook, full pagewidth
h FE
200
V CE =
-
5 V
100
0
- 10 - 1
- 10 2
- 10 3
- 1
- 10
I C (mA)
BC859AW; BC860AW.
Fig.2 DC current gain; typical values.
MBH727
400
handbook, full pagewidth
h FE
V CE = - 5 V
300
200
100
- 10 - 2
0
- 10 - 1
- 10 2
- 10 3
- 1
- 10
I C (mA)
BC859BW; BC860BW.
Fig.3 DC current gain; typical values.
1997 Sep 03
5
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