LF411.PDF

August 2000

LF411

Low Offset, Low Drift JFET Input Operational Amplifier

General Description

These devices are low cost, high speed, JFET input opera-

tional amplifiers with very low input offset voltage and guar-

anteed input offset voltage drift. They require low supply cur-

rent yet maintain a large gain bandwidth product and fast

slew rate. In addition, well matched high voltage JFET input

devices provide very low input bias and offset currents. The

LF411 is pin compatible with the standard LM741 allowing

designers to immediately upgrade the overall performance of

existing designs.

These amplifiers may be used in applications such as high

speed integrators, fast D/A converters, sample and hold cir-

cuits and many other circuits requiring low input offset volt-

age and drift, low input bias current, high input impedance,

high slew rate and wide bandwidth.

Features

n Internally trimmed offset voltage:

0.5 mV(max)

n Input offset voltage drift:

10 µV/˚C(max)

n Low input bias current:

50 pA

n Low input noise current:

0.01 pA/ Ö Hz

n Wide gain bandwidth:

3 MHz(min)

n High slew rate:

10V/µs(min)

n Low supply current:

1.8 mA

n High input impedance:

10 12

n Low total harmonic distortion:

0.02%

n Low 1/f noise corner:

50 Hz

n Fast settling time to 0.01%:

2 µs

Typical Connection

Connection Diagrams

Metal Can Package

DS005655-5

Note: Pin 4 connected to case.

DS005655-1

Top View

Order Number LF411ACH

or LF411MH/883 (Note 11)

See NS Package Number H08A

Ordering Information

LF411XYZ

X indicates electrical grade

Y indicates temperature range

“M” for military

“C” for commercial

Z indicates package type

“H” or “N”

Dual-In-Line Package

DS005655-7

Top View

Order Number LF411ACN, LF411CN

See NS Package Number N08E

BI-FET II ™ is a trademark of National Semiconductor Corporation.

DS005655

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

LF411A

H Package

N Package

T j max

150˚C

115˚C

q j A

162˚C/W (Still Air)

120˚C/W

LF411

65˚C/W (400 LF/min

Air Flow)

Supply Voltage

± 22V

± 18V

q j C

20˚C/W

Differential Input Voltage

± 38V

± 30V

Operating Temp.

Range

(Note 4)

Input Voltage Range

(Note 2)

± 19V

± 15V

Storage Temp.

Range

−65˚C

T A £

150˚C −65˚C

T A £

150˚C

Output Short Circuit

Duration

Continuous Continuous

H Package

Lead Temp.

(Soldering,

10 sec.)

260˚C

N Package

Power Dissipation

(Notes 3, 10)

ESD Tolerance

Rating to be determined.

670 mW

DC Electrical Characteristics (Note 5)

Symbol

Parameter

Conditions

LF411A

LF411

Units

Min

Typ

Max Min

Typ

Max

V OS

Input Offset Voltage

R S =10 k

,T A =25˚C

0.3

0.5

0.8

2.0

V OS /

T Average TC of Input

R S =10 k

(Note 6)

µV/˚C

Offset Voltage

(Note 6)

I OS

Input Offset Current

V S = ± 15V

T j =25˚C

100

(Notes 5, 7)

T j =70˚C

T j =125˚C

I B

Input Bias Current

V S = ± 15V

T j =25˚C

200

(Notes 5, 7)

T j =70˚C

T j =125˚C

R IN

Input Resistance

T j =25˚C

10 12

A VOL

Large Signal Voltage

V S = ± 15V, V O = ± 10V,

200

V/mV

Gain

R L =2k, T A =25˚C

Over Temperature

200

V/mV

V O

Output Voltage Swing

V S = ± 15V, R L =10k

± 12 ± 13.5

V CM

Input Common-Mode

± 16 +19.5

± 11 +14.5

Voltage Range

−16.5

−11.5

CMRR

Common-Mode

R S

10k

100

Rejection Ratio

PSRR

Supply Voltage

(Note 8)

100

Rejection Ratio

I S

Supply Current

1.8

2.8

1.8

3.4

AC Electrical Characteristic (Note 5)

Symbol

Parameter

Conditions

LF411A

LF411

Units

Min

Typ

Max Min

Typ

Max

Slew Rate

V S = ± 15V, T A =25˚C

V/µs

GBW

Gain-Bandwidth Product

V S = ± 15V, T A =25˚C

2.7

MHz

e n

Equivalent Input Noise Voltage

T A =25˚C, R S =100

f=1 kHz

i n

Equivalent Input Noise Current

T A =25˚C, f=1 kHz

0.01

THD

Total Harmonic Distortion

A V =+10, R L =10k,

V O =20 Vp-p,

BW=20 Hz−20 kHz

< 0.02

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AC Electrical Characteristic (Note 5) (Continued)

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

functional, but do not guarantee specific performance limits.

Note 2: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.

Note 3: For operating at elevated temperature, these devices must be derated based on a thermal resistance of

q j A.

125˚C. The temperature

range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M” indicates the

military temperature range. The military temperature range is available in “H” package only.

Note 5: Unless otherwise specified, the specifications apply over the full temperature range and for V S =±20V for the LF411A and for V S =±15V for the LF411. V OS ,

I B , and I OS are measured at V CM =0.

Note 6: The LF411A is 100% tested to this specification. The LF411 is sample tested to insure at least 90% of the units meet this specification.

Note 7: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T j . Due to limited pro-

duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem-

perature as a result of internal power dissipation, P D .T j =T A +

T A

70˚C and the military temperature range −55˚C

T A

q jA P D where

q jA is the thermal resistance from junction to ambient. Use of a heat sink is recommended

if input bias current is to be kept to a minimum.

Note 8: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice, from

± 15V to ± 5V for the LF411 and from ± 20V to ± 5V for the LF411A.

Note 9: RETS 411X for LF411MH and LF411MJ military specifications.

Note 10: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate out-

side guaranteed limits.

Typical Performance Characteristics

Input Bias Current

Supply Current

DS005655-11

DS005655-12

DS005655-13

Positive Common-Mode

Input Voltage Limit

Negative Common-Mode

Input Voltage Limit

Positive Current Limit

DS005655-16

DS005655-14

DS005655-15

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Note 4: These devices are available in both the commercial temperature range 0˚C

Typical Performance Characteristics (Continued)

Negative Current Limit

Output Voltage Swing

DS005655-17

DS005655-18

DS005655-19

Gain Bandwidth

Bode Plot

Slew Rate

DS005655-20

DS005655-21

DS005655-22

Distortion vs Frequency

Undistorted Output

Voltage Swing

Open Loop Frequency

Response

DS005655-23

DS005655-24

DS005655-25

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Typical Performance Characteristics (Continued)

Common-Mode Rejection

Ratio

Power Supply

Rejection Ratio

Equivalent Input Noise

Voltage

DS005655-26

DS005655-27

DS005655-28

Open Loop Voltage Gain

Output Impedance

Inverter Settling Time

DS005655-29

DS005655-30

DS005655-31

Pulse Response R L =2 k W ,C L 10 pF

Small Signal Inverting

Small Signal Non-Inverting

DS005655-39

DS005655-40

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