PIN-BAR65.pdf

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Genesys
BAR65...
Series diode for mobile communication in
low loss transmit-receiver switches
Band switch for TV-tuners
Very low forward resistance (typ. 0.65
@ 5 mA)
Low capacitance (typ. 0.5 pF @ 0V)
Fast switching applications
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
Type
Package
Configuration
L S (nH) Marking
BAR65-02L *
BAR65-02V
BAR65-03W
BAR65-07
TSLP-2-1
SC79
SOD323
SOT143
single, leadless
single
single
parallel pair
0.4
0.6
1.8
2
NN
N
M/blue
Ms
* Preliminary Data
Maximum Ratings at T A = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V R
30
V
Forward current
I F
100
mA
Total power dissipation
BAR65-02L, T S
P tot
250
250
250
250
mW
128°C
BAR65-02V, T S
118°C
BAR65-03W, T S
113°C
BAR65-07, T S
57°C
Junction temperature
T j
150
°C
Operating temperature range
T op
-55 ... 125
Storage temperature
T stg
-55 ... 150
1
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Silicon PIN Diode
331432155.010.png 331432155.011.png 331432155.012.png 331432155.013.png
BAR65...
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point 1)
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
R thJS
K/W
90
130
145
370
Electrical Characteristics at T A = 25°C, unless o therwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Reverse current
V R = 20 V
I R
-
-
20 nA
Forward voltage
I F = 100 mA
V F
-
0.93
1
V
1 For calculation of R thJA please refer to Application Note Thermal Resistance
2
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331432155.001.png 331432155.002.png 331432155.003.png
BAR65...
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Diode capacitance
V R = 1 V, f = 1 MHz
V R = 3 V, f = 1 MHz
V R = 0 V, f = 100 MHz ... 1.8 GHz
C T
0.45
0.4
0.5
0.9
0.8
-
pF
-
-
-
Reverse parallel resistance
V R = 0 V, f = 100 MHz
V R = 0 V, f = 1 GHz
V R = 0 V, f = 1.8 GHz
R P
700
10
5
k
-
-
-
-
-
-
Forward resistance
I F = 1 mA, f = 100 MHz
I F = 5 mA, f = 100 MHz
I F = 10 mA, f = 100 MHz
r f
1
0.65
0.56
-
-
-
-
0.95
0.9
Charge carrier life time
I F = 10 mA, I R = 6 mA, measured at I R = 3 mA,
R L = 100
rr
-
80
-
ns
I-region width
W I
-
3.5
-
µm
Insertion loss 1)
I F = 1 mA, f = 1.8 GHz
I F = 5 mA, f = 1.8 GHz
I F = 10 mA, f = 1.8 GHz
| S 21 | 2
-0.08
-0.06
-0.05
dB
-
-
-
-
-
-
Isolation 1)
V R = 0 V, f = 0.9 GHz
V R = 0 V, f = 1.8 GHz
V R = 0 V, f = 2.45 GHz
| S 21 | 2
-12
-7
-5
-
-
-
-
-
-
1 BAR65-02L in series configuration, Z = 50
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331432155.004.png
BAR65...
Diode capacitance C T =
(V R )
Reverse parallel resistance R P =
( V R )
f = Parameter
f = Parameter
0.5
10
KOhm
4
100 MHz
F
10
3
1 MHz ... 1.8 GHz
0.4
0.35
10
2
1 GHz
0.3
1.8 GHz
10
1
0.25
0.2
10
0
0.15
0.1
10
-1
0
2
4
6
8 10 12 14 16 V
20
0
2
4
6
8 10 12 14 16 V
20
V R
V R
Forward resistance r f =
( I F )
Forward current I F =
( V F )
f = 100MHz
T A = Parameter
10
1
10
A
0
10
-1
Ohm
10
-2
10
0
10
-3
10
-4
-40 °C
25 °C
85 °C
125 °C
10
-5
10
-1
10
-6
10 -2
10 -1
10 0
10 1
mA
I F
10 2
0
0.2
0.4
0.6
0.8
V
1.2
V F
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Feb-04-2003
331432155.005.png 331432155.006.png 331432155.007.png
BAR65...
Forward current I F =
( T S )
Forward current I F =
( T S )
BAR65-02L
BAR65-02V
120
120
mA
mA
100
100
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0 15 30 45 60 75 90 105 120 °C 150
T S
0
0 15 30 45 60 75 90 105 120 °C 150
T S
Forward current I F =
( T S )
Forward current I F =
( T S )
BAR65-03W
BAR65-07
120
120
mA
mA
100
100
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0 15 30 45 60 75 90 105 120 °C 150
T S
0
0 15 30 45 60 75 90 105 120 °C 150
T S
5
Feb-04-2003
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