PIN-BAR65.pdf
(
464 KB
)
Pobierz
Genesys
BAR65...
Series diode for mobile communication in
low loss transmit-receiver switches
Band switch for TV-tuners
Very low forward resistance (typ. 0.65
@ 5 mA)
Low capacitance (typ. 0.5 pF @ 0V)
Fast switching applications
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
Type
Package
Configuration
L
S
(nH)
Marking
BAR65-02L *
BAR65-02V
BAR65-03W
BAR65-07
TSLP-2-1
SC79
SOD323
SOT143
single, leadless
single
single
parallel pair
0.4
0.6
1.8
2
NN
N
M/blue
Ms
* Preliminary Data
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
30
V
Forward current
I
F
100
mA
Total power dissipation
BAR65-02L,
T
S
P
tot
250
250
250
250
mW
128°C
BAR65-02V,
T
S
118°C
BAR65-03W,
T
S
113°C
BAR65-07,
T
S
57°C
Junction temperature
T
j
150
°C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
1
Feb-04-2003
Silicon PIN Diode
BAR65...
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
R
thJS
K/W
90
130
145
370
Electrical Characteristics
at
T
A
= 25°C, unless o
therwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Reverse current
V
R
= 20 V
I
R
-
-
20
nA
Forward voltage
I
F
= 100 mA
V
F
-
0.93
1
V
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Feb-04-2003
BAR65...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 3 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz ... 1.8 GHz
C
T
0.45
0.4
0.5
0.9
0.8
-
pF
-
-
-
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
R
P
700
10
5
k
-
-
-
-
-
-
Forward resistance
I
F
= 1 mA,
f
= 100 MHz
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
r
f
1
0.65
0.56
-
-
-
-
0.95
0.9
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
rr
-
80
-
ns
I-region width
W
I
-
3.5
-
µm
Insertion loss
1)
I
F
= 1 mA,
f
= 1.8 GHz
I
F
= 5 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
|
S
21
|
2
-0.08
-0.06
-0.05
dB
-
-
-
-
-
-
Isolation
1)
V
R
= 0 V,
f
= 0.9 GHz
V
R
= 0 V,
f
= 1.8 GHz
V
R
= 0 V,
f
= 2.45 GHz
|
S
21
|
2
-12
-7
-5
-
-
-
-
-
-
1
BAR65-02L in series configuration,
Z
= 50
3
Feb-04-2003
BAR65...
Diode capacitance
C
T
=
(V
R
)
Reverse parallel resistance
R
P
=
(
V
R
)
f
= Parameter
f
= Parameter
0.5
10
KOhm
4
100 MHz
F
10
3
1 MHz ... 1.8 GHz
0.4
0.35
10
2
1 GHz
0.3
1.8 GHz
10
1
0.25
0.2
10
0
0.15
0.1
10
-1
0
2
4
6
8 10 12 14 16
V
20
0
2
4
6
8 10 12 14 16
V
20
V
R
V
R
Forward resistance
r
f
=
(
I
F
)
Forward current
I
F
=
(
V
F
)
f
= 100MHz
T
A
= Parameter
10
1
10
A
0
10
-1
Ohm
10
-2
10
0
10
-3
10
-4
-40 °C
25 °C
85 °C
125 °C
10
-5
10
-1
10
-6
10
-2
10
-1
10
0
10
1
mA
I
F
10
2
0
0.2
0.4
0.6
0.8
V
1.2
V
F
4
Feb-04-2003
BAR65...
Forward current
I
F
=
(
T
S
)
Forward current
I
F
=
(
T
S
)
BAR65-02L
BAR65-02V
120
120
mA
mA
100
100
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
Forward current
I
F
=
(
T
S
)
Forward current
I
F
=
(
T
S
)
BAR65-03W
BAR65-07
120
120
mA
mA
100
100
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
5
Feb-04-2003
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