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199618102 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV57
UHF linear push-pull power
transistor
Product specification
Supersedes data of August 1986
1998 Feb 09
199618102.051.png
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
FEATURES
PINNING - SOT161A
·
internally matched input for wideband operation and
high power gain
PIN
SYMBOL
DESCRIPTION
1
e
emitter
·
internal midpoint (r.f. ground) reduces negative
feedback and improves power gain
2
e
emitter
3
c2
collector 2
·
increased input and output impedances (compared with
single-ended transistors) simplify wideband matching
4
b2
base 2
·
length of the external emitter leads is not critical
5
c1
collector 1
·
diffused emitter ballasting resistors for an optimum
temperature profile
6
b1
base 1
7
e
emitter
·
gold metallization ensures excellent reliability.
8
e
emitter
DESCRIPTION
Two n-p-n silicon planar epitaxial transistor sections in one
package to be used as push-pull amplifier, primarily
intended for use in linear u.h.f. television transmitters and
transposers.
handbook, halfpage
1
3
5
7
2
4
6
The package is an 8-lead flange type with a ceramic cap.
All leads are isolated from the flange.
8
Top view
MBC826
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
R.F. performance in linear amplifier
MODE OF
OPERATION
f vision
MHz
V CE
V
I C1 =I C2
A
I C(ZS)
A
T h
° C
d im (1)
dB
P o sync (1)
W
P L
W
G p
dB
class-A
860
25
0,85
-
70
25
- 60
- 55
ñ
typ.
6
12
-
typ.
8,0
9,0
class-AB
860
25
1,25
2
´
0,1
25
-
-
typ. 38 (2)
typ. 6,5 (2)
Notes
1. Three-tone test method (vision carrier - 8 dB, sound carrier - 7 dB, sideband signal - 16 dB), zero dB corresponds to
peak sync level.
2. Power gain compression is 1 dB.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Feb 09
2
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Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); V BE =0
v CESM
max.
50 V
open base
V CEO
max.
27 V
Emitter-base voltage (open collector)
V EBO
max.
3,5 V
Collector current per transistor section
d.c. or average
I C ; I C(AV)
max.
2 A
(peak value); f ñ 1 MHz
I CM
max.
4 A
Total power dissipation at T mb =25
°
C (1)
P tot
max.
77 W (1)
R.F. power dissipation (f
ñ
1 MHz); T mb =25
°
C (1)
P rf
max.
93 W (1)
Storage temperature
T stg
-
65 to
+
150
°
C
Operating junction temperature
T j
max.
200
° C
Note
1. Dissipation of either transistor section should not exceed half rated dissipation.
10
MGP358
handbook, halfpage
I C1 + I C2
(A)
(1)
T h = 70
C
T mb = 25
C
1
10 2
1
10
V CE (V)
(1) Second breakdown limit
(independent of temperature).
Fig.2 D.C. SOAR. (1)
1998 Feb 09
3
°
°
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Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP359
100
handbook, halfpage
P tot
(W)
75
II
50
I
25
0
0
50
100
T h ( ° C)
I Continuous d.c. (including r.f. class-A) operation
II Continuous r.f. operation
Dissipation of either transistor section should not exceed half rated dissipation.
Fig.3 Power derating curves vs. temperature. (1)
C)
From junction to mounting base (d.c. dissipation)
°
C, i.e. T h =70
°
R th j - mb(dc)
=
2,43 K/W
From junction to mounting base (r.f. dissipation)
R th j - mb(rf)
=
1,91 K/W
From mounting base to heatsink
R th mb - h
=
0,25 K/W
1998 Feb 09
4
THERMAL RESISTANCE
(dissipation = 42 W; T mb = 80,5
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Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP360
3
handbook, full pagewidth
T h = 120
°
C 100
C
8 0 ° C
60 ° C
40 ° C
20
°
C
R th j-h
(K/W)
0 ° C
2.5
T j = 200 ° C
175 ° C
150
°
C
125 ° C
2
100
C
75 ° C
1.5
0
20
40
60
80
100
P tot (W)
Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters. (R th mb-h = 0,25 K/W.)
Example
Nominal class-A push-pull operation (without r.f. signal): V CE = 25 V; I C1 =I C2 = 0,85 A; T h =70 ° C.
Fig.4 shows:
R th j-h
max. 2,68 K/W
T j
max. 184
° C
Typical device: R th j-h
typ.
2,28 K/W
T j
typ.
167
°
C
1998 Feb 09
5
°
°
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