MBR3030_MBR3060.pdf

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Ds23017_R7.pdf
MBR3030PT - MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for
Transient Protection
TO-3P
Dim Min Max
A 1.88 2.08
B 4.68 5.36
C 20.63 22.38
D 18.5 21.5
E 2.1 2.4
G 0.51 0.76
H 15.38 16.25
J 1.90 2.70
K 2.9 3.65
L 3.78 4.50
M 5.2 5.7
N 0.89 1.53
P 1.82 2.46
Q 2.92 3.23
R 11.70 12.84
S 6.10
All Dimensions in mm
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
H
A
B
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
S
J
C
Plastic Material: UL Flammability
Classification Rating 94V-0
R
K
Mechanical Data
P
Q
L
Case: Molded Plastic
G
D
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
N
Moisture sensitivity: Level 1 per J-STD-020A
Polarity: As Marked on Body
E
Marking: Type Number
M
M
Weight: 5.6 grams (approx.)
Maximum Ratings and Electrical Characteristics
@ T A = 25 C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
3030PT
MBR
3035PT
MBR
3040PT
MBR
3045PT
MBR
3050PT
MBR
3060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V RRM
V RWM
V R
30
35
40
45
50
60
V
RMS Reverse Voltage
V R(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
@ T C = 125
C
I O
30
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
I FSM
200
A
Forward Voltage Drop
@ I F = 20A, T C = 25 C
0.60
0.76
0.72
0.75
0.65
0.80
0.75
C
@ I F = 30A, T C = 25 C
@ I F = 30A, T C = 125 C
@ I F = 20A, T C = 125
V FM
V
Peak Reverse Current @ T C = 25 C
at Rated DC Blocking Voltage, per element @ T C = 125 C
I RM
1.0
60
5.0
100
mA
Typical Total Capacitance
(Note 2)
C T
500
pF
Typical Thermal Resistance Junction to Case
(Note 1)
R Jc
1.4
C/W
Voltage Rate of Change (Rated V R )
dV/dt
10,000
V/µs
Operating Temperature Range
T j
-65 to +150
C
Storage Temperature Range
T STG
-65 to +175
°C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width 300 s, duty cycle 2%.
DS23017 Rev. 7 - 2
1 of 2
MBR3030PT - MBR3060PT
www.diodes.com
Diodes Incorporated
Total Device (See Fig. 1)
per element (Note 3)
385247989.001.png 385247989.002.png
30
100
24
MBR 3030PT - MBR 3045PT
10
18
12
MBR 3050PT - MBR 3060PT
1.0
6
T = 25°C
j
2% duty cycle
0
0.1
0
50
100
150
0
0.2
0.4
0.6
0.8
T , CASE TEMPERATURE (°C)
C
Fig. 1 Forward Current Derating Curve, total device
V , INSTANTANEOUS F0RWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics, per element
300
4000
T = 25°C
j
f = 1MHz
T = 25°C
j
8.3ms Single half-wave
JEDEC Method
250
200
1000
150
100
50
0
100
1
10
100
0.1
1.0
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
V , REVERSE VOLTAGE (V)
R
Fig.4 Typical Total Capacitance
100
10
T = 125°C
j
1.0
T = 75°C
j
0.1
T = 25°C
j
0.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics, per element
DS23017 Rev. 7 - 2
2 of 2
MBR3030PT - MBR3060PT
www.diodes.com
385247989.003.png 385247989.004.png

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